Overview
The MJD2955T4G is a PNP power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the MJD2955 and MJD3055 series, which are complementary power transistors. The MJD2955T4G is packaged in a DPAK (TO-252) case, which is suitable for surface mount applications. It is electrically similar to the MJE2955 and MJE3055 transistors, offering high current gain-bandwidth product and robust thermal characteristics.
Key Specifications
Characteristic | Symbol | Max | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 60 | Vdc |
Collector-Base Voltage | VCB | 70 | Vdc |
Emitter-Base Voltage | VEB | 5 | Vdc |
Collector Current | IC | 10 | Adc |
Base Current | IB | 6 | Adc |
Total Power Dissipation @ TC = 25°C | PD | 20 | W |
Total Power Dissipation @ TA = 25°C | PD | 1.75 | W |
Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
Thermal Resistance, Junction-to-Case | RJC | 6.25 | °C/W |
Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | °C/W |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Straight lead version in plastic sleeves (“−1” suffix).
- Electrically similar to MJE2955 and MJE3055.
- High current gain-bandwidth product.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
Applications
The MJD2955T4G is suitable for various applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems (with NJV prefix).
- Industrial control systems.
- Power management circuits.
Q & A
- What is the maximum collector-emitter voltage for the MJD2955T4G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the total power dissipation at TC = 25°C?
The total power dissipation at TC = 25°C is 20 W.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RJC) is 6.25 °C/W.
- Is the MJD2955T4G RoHS compliant?
- What are the operating and storage junction temperature ranges?
The operating and storage junction temperature range is −55 to +150 °C.
- What is the current gain-bandwidth product of the MJD2955T4G?
The current gain-bandwidth product (fT) is 2 MHz at IC = 500 mAdc, VCE = 10 Vdc, and f = 500 kHz.
- What are the typical applications for the MJD2955T4G?
The MJD2955T4G is typically used in general-purpose amplifiers and low-speed switching applications.
- Is the MJD2955T4G suitable for automotive applications?
- What is the package type for the MJD2955T4G?
The MJD2955T4G is packaged in a DPAK (TO-252) case.
- How many units are shipped per reel for the MJD2955T4G?
The MJD2955T4G is shipped in quantities of 2,500 units per reel.