Overview
The UCC27624DR is a dual-channel, high-speed, low-side gate driver produced by Texas Instruments. This device is designed to effectively drive MOSFET, IGBT, SiC, and GaN power switches. It features a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The UCC27624DR has a fast propagation delay of 17ns, which improves deadtime optimization, pulse width utilization, control loop response, and transient performance of the system. The device is robust, with inputs capable of handling –10V, and includes undervoltage lockout (UVLO) for enhanced system robustness.
Key Specifications
Parameter | Typical Value | Unit |
---|---|---|
Peak Source and Sink Drive Current | 5A | A |
Propagation Delay | 17ns | ns |
Input Voltage Range | –10V to VDD | V |
Supply Voltage Range | 4.5V to 26V | V |
Operating Junction Temperature | –40°C to 150°C | °C |
Package Options | SOIC 8, VSSOP 8, WSON 8 | |
UVLO Threshold | 4V | V |
Key Features
- High-Speed Operation: Fast propagation delay of 17ns and 1ns delay matching between channels.
- Robust Inputs: Capable of handling –10V, ensuring reliable operation in noisy environments.
- Undervoltage Lockout (UVLO): Protects the system by holding the gate driver output low when the bias voltage is insufficient.
- Independent Enable Pins: Each channel has an enable pin (ENx) with a fixed TTL-compatible threshold, allowing independent control of each driver channel.
- Wide Operating Range: Expanded VDD operating range of 4.5V to 26V and an operating temperature range of –40°C to 150°C.
- Transient Handling: The device can tolerate noise on the gate of the power device and pulse-transformer without malfunctioning.
- Low Propagation Delays and Tightly Matched Outputs: Ensures minimal pulse width distortion for high-frequency switching applications.
Applications
- High-Frequency Switching Power Supplies: Ideal for applications requiring fast switching and low pulse width distortion.
- Synchronous Rectification: Suitable for driving SR MOSFETs with very low distortion.
- Gate Drive Transformer Applications: Particularly suited for dual-polarity, symmetrical drive-gate transformer applications.
- Power Switches: Drives MOSFET, IGBT, SiC, and GaN power switches efficiently.
Q & A
- What is the peak drive current of the UCC27624DR?
The UCC27624DR has a typical peak source and sink drive current of 5A for each channel.
- What is the propagation delay of the UCC27624DR?
The propagation delay is typically 17ns.
- What is the input voltage range of the UCC27624DR?
The inputs can handle –10V to VDD.
- What are the package options for the UCC27624DR?
The device is available in SOIC 8, VSSOP 8, and WSON 8 packages.
- What is the UVLO threshold of the UCC27624DR?
The UVLO threshold is 4V.
- Can the UCC27624DR handle noisy environments?
- What is the operating temperature range of the UCC27624DR?
The operating temperature range is –40°C to 150°C.
- How does the UCC27624DR handle transient currents?
The device can tolerate noise on the gate of the power device and pulse-transformer without malfunctioning, thanks to its transient reverse current and reverse voltage capability.
- Is the UCC27624DR suitable for synchronous rectification applications?
- Can the UCC27624DR be used in gate drive transformer applications?