NCD57001DWR2G
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onsemi NCD57001DWR2G

Manufacturer No:
NCD57001DWR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 16SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCD57001DWR2G from onsemi is a high-current, single-channel IGBT (Insulated Gate Bipolar Transistor) gate driver designed for high system efficiency and reliability in high-power applications. This device features internal galvanic isolation, making it suitable for applications requiring high safety and insulation standards. It supports both 5 V and 3.3 V input signals and has a wide bias voltage range, including negative voltage capability. The NCD57001DWR2G is packaged in a wide-body SOIC-16 format, ensuring reinforced safety insulation with a guaranteed 8 mm creepage distance between input and output.

Key Specifications

Parameter Min Typ Max Unit
Supply Voltage, Input Side (VDD1-GND1) -0.3 6 V
Positive Power Supply, Output Side (VDD2-GND2) -0.3 25 V
Negative Power Supply, Output Side (VEE2-GND2) -10 0.3 V
Differential Power Supply, Output Side (VDD2-VEE2) 0 25 V
Gate-Driver Output Sourcing Current (IPK-SRC) -7.8 A
Gate-Driver Output Sinking Current (IPK-SNK) -7.1 A
Clamp Sinking Current (IPK-CLAMP) -2.5 A
Input-Output Isolation Voltage (VISO) 5000 VRMS
Working Voltage (VIORM) 1200 V
Ambient Temperature (TA) -40 125 °C

Key Features

  • High Current Output: +4 A / -6 A at IGBT Miller Plateau Voltages
  • Low Output Impedance for Enhanced IGBT Driving
  • Short Propagation Delays with Accurate Matching
  • Active Miller Clamp to Prevent Spurious Gate Turn-on
  • DESAT Protection with Programmable Delay and Soft Turn Off During IGBT Short Circuit
  • Negative Voltage Capability Down to -9 V for DESAT
  • IGBT Gate Clamping During Short Circuit and Active Pull Down
  • Tight UVLO Thresholds for Bias Flexibility
  • Wide Bias Voltage Range Including Negative VEE2
  • 3.3 V to 5 V Input Supply Voltage Compatibility
  • Designed for AEC-Q100 Certification
  • High Transient and Electromagnetic Immunity
  • Pb-Free, Halogen-Free, and RoHS Compliant

Applications

  • Solar Inverters
  • Motor Control
  • Uninterruptible Power Supplies (UPS)
  • Industrial Power Supplies
  • Welding Equipment

Q & A

  1. What is the primary function of the NCD57001DWR2G?

    The NCD57001DWR2G is a high-current, single-channel IGBT gate driver designed for high-power applications.

  2. What is the input voltage range for the NCD57001DWR2G?

    The input voltage range is from 3.3 V to 5 V.

  3. What is the maximum output current of the NCD57001DWR2G?

    The maximum output current is +4 A sourcing and -6 A sinking.

  4. What kind of isolation does the NCD57001DWR2G provide?

    The device provides > 5 kVrms galvanic isolation and > 1200 V working voltage.

  5. What are the typical applications for the NCD57001DWR2G?

    Typical applications include solar inverters, motor control, UPS, industrial power supplies, and welding equipment.

  6. Is the NCD57001DWR2G RoHS compliant?

    Yes, the device is Pb-Free, Halogen-Free, and RoHS compliant.

  7. What is the operating temperature range for the NCD57001DWR2G?

    The operating temperature range is from -40°C to 125°C.

  8. What kind of protection does the NCD57001DWR2G offer?

    The device offers DESAT protection with programmable delay and soft turn-off during IGBT short circuit.

  9. What is the package type for the NCD57001DWR2G?

    The device is packaged in a wide-body SOIC-16 format.

  10. Does the NCD57001DWR2G support negative voltage?

    Yes, it supports negative voltage down to -9 V for DESAT.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT
Voltage - Supply:24V
Logic Voltage - VIL, VIH:- 
Current - Peak Output (Source, Sink):7.8A, 7.1A
Input Type:Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):10ns, 15ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:16-SOIC
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Similar Products

Part Number NCD57001DWR2G NCD57001FDWR2G NCD57000DWR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Single Single Single
Number of Drivers 1 1 1
Gate Type IGBT IGBT IGBT
Voltage - Supply 24V 24V 24V
Logic Voltage - VIL, VIH - - -
Current - Peak Output (Source, Sink) 7.8A, 7.1A 7.8A, 7.1A 7.8A, 7.1A
Input Type Inverting, Non-Inverting Inverting, Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) - - -
Rise / Fall Time (Typ) 10ns, 15ns 10ns, 15ns 10ns, 15ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC 16-SOIC 16-SOIC

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