NCP5106BDR2G
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onsemi NCP5106BDR2G

Manufacturer No:
NCP5106BDR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The NCP5106BDR2G, produced by onsemi, is a high voltage gate driver IC designed to drive two N-channel power MOSFETs or IGBTs. This component is particularly useful in configurations such as half-bridge, full-bridge, and other complementary drive converters. It employs the bootstrap technique to ensure proper drive of the high-side power switch and features independent logic inputs to accommodate various topologies.

Key Specifications

ParameterValueUnit
Main power supply voltage (VCC)−0.3 to 20V
High Voltage BRIDGE pin (VBRIDGE)−1 to 600V
Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation−10V
Output source/sink current capability250 mA / 500 mAmA
Input logic compatibility3.3 V and 5 VV
Turn-on propagation delay (tON)100 to 170ns
Turn-off propagation delay (tOFF)100 to 170ns
Internal fixed dead time (DT) - Version B65 to 100ns
Maximum Operating Junction Temperature (TJ_max)+150°C
Storage Temperature Range (TST)−55 to +150°C

Key Features

  • High Voltage Range: Up to 600 V
  • dV/dt Immunity ±50 V/nsec
  • Negative Current Injection Characterized Over the Temperature Range
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to VCC Swing on Input Pins
  • Extended Allowable Negative Bridge Pin Voltage Swing to −10 V for Signal Propagation
  • Matched Propagation Delays Between Both Channels
  • Outputs in Phase with the Inputs
  • Independent Logic Inputs to Accommodate All Topologies (Version A)
  • Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B)
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin-to-Pin Compatible with Industry Standards
  • Pb-Free Devices

Applications

  • Half-Bridge Power Converters
  • Any Complementary Drive Converters (Asymmetrical Half-Bridge, Active Clamp) - Version A only
  • Full-Bridge Converters

Q & A

  1. What is the maximum operating voltage of the NCP5106BDR2G?
    The maximum operating voltage is up to 600 V.
  2. What is the output source/sink current capability of the NCP5106BDR2G?
    The output source/sink current capability is 250 mA / 500 mA.
  3. Is the NCP5106BDR2G compatible with 3.3 V and 5 V input logic?
    Yes, it is compatible with both 3.3 V and 5 V input logic.
  4. What is the internal fixed dead time for Version B of the NCP5106BDR2G?
    The internal fixed dead time for Version B is 65 to 100 ns.
  5. What are the typical applications of the NCP5106BDR2G?
    Typical applications include half-bridge power converters, full-bridge converters, and other complementary drive converters.
  6. Does the NCP5106BDR2G have cross conduction protection?
    Yes, Version B of the NCP5106BDR2G has cross conduction protection with a 100 ns internal fixed dead time.
  7. What is the maximum operating junction temperature of the NCP5106BDR2G?
    The maximum operating junction temperature is +150°C.
  8. Is the NCP5106BDR2G Pb-free?
    Yes, the NCP5106BDR2G is a Pb-free device.
  9. What is the storage temperature range for the NCP5106BDR2G?
    The storage temperature range is −55 to +150°C.
  10. Does the NCP5106BDR2G support bootstrap operation?
    Yes, it uses the bootstrap technique to ensure proper drive of the high-side power switch.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NCP5106BDR2G NCP5109BDR2G NCP5106ADR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 200 V 600 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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