Overview
The L6571BD, produced by STMicroelectronics, is a high voltage half bridge driver with an integrated oscillator. This device is designed to drive external n-channel power MOSFETs and IGBTs, making it suitable for various high-voltage applications. The L6571BD features a programmable oscillator frequency, which can be set using external resistors and capacitors, and it also supports driving by external logic signals. The device includes internal logic to ensure a dead time, preventing cross-conduction of the power devices. It is available in two versions, L6571A and L6571B, differing primarily in their internal dead times of 1.25 μs and 0.72 μs, respectively.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Supply Voltage (VS) | 10 | V |
| Floating Supply Voltage (VBOOT) | -500 | V |
| High Side Switch Source Output (VOUT) | -1 to VBOOT - VCL | V |
| High Voltage Rail | Up to 600 V | V |
| Driver Current Capability | Source: 170 mA, Sink: 270 mA | mA |
| Start Up Current | 150 μA | μA |
| Undervoltage Lockout with Hysteresis | Yes | |
| Programmable Oscillator Frequency | Up to 200 kHz | kHz |
| Internal Dead Time (L6571B) | 0.72 μs (typ.) | μs |
| dV/dt Immunity | Up to ±50 V/ns | V/ns |
| ESD Protection | Up to 900 V (Human Body Model) | V |
Key Features
- High voltage rail up to 600 V
- BCD off-line technology
- 15.6 V Zener clamp on VS
- Driver current capability: 170 mA source, 270 mA sink
- Very low start-up current: 150 μA
- Undervoltage lockout with hysteresis
- Programmable oscillator frequency
- Internal dead time to prevent cross-conduction of power devices
- dV/dt immunity up to ±50 V/ns
- ESD protection up to 900 V (Human Body Model)
Applications
The L6571BD is suitable for a variety of high-voltage applications, including:
- Power supplies and converters
- Motor control and drives
- Industrial automation
- High-voltage DC-DC converters
- Switch-mode power supplies
Q & A
- What is the maximum high voltage rail for the L6571BD?
The maximum high voltage rail for the L6571BD is up to 600 V.
- How can the oscillator frequency be programmed in the L6571BD?
The oscillator frequency can be programmed using external resistors and capacitors connected to the RF and CF pins.
- What is the internal dead time for the L6571B version?
The internal dead time for the L6571B version is 0.72 μs (typical).
- Does the L6571BD have ESD protection?
Yes, the L6571BD has ESD protection up to 900 V (Human Body Model).
- What is the driver current capability of the L6571BD?
The driver current capability is 170 mA source and 270 mA sink.
- What is the start-up current of the L6571BD?
The start-up current is very low at 150 μA.
- Does the L6571BD have undervoltage lockout with hysteresis?
Yes, the L6571BD includes undervoltage lockout with hysteresis.
- What is the dV/dt immunity of the L6571BD?
The dV/dt immunity is up to ±50 V/ns.
- Can the L6571BD be driven by external logic signals?
Yes, the internal circuitry of the device allows it to be driven by external logic signals.
- What types of power devices can the L6571BD drive?
The L6571BD is designed to drive external n-channel power MOSFETs and IGBTs.
