LM5112MYX
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Texas Instruments LM5112MYX

Manufacturer No:
LM5112MYX
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8MSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LM5112, produced by Texas Instruments, is a high-speed, high-peak current single-channel MOSFET gate driver. This device is available in a tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package, both designed to enhance power dissipation for high-frequency operations. The LM5112 features a compound output driver stage that includes both MOS and bipolar transistors, which together provide more than 7 A peak current to capacitive loads, reducing output current variation with voltage and temperature. This driver is particularly useful for applications requiring fast rise and fall times, such as DC to DC and AC to DC switch-mode power supplies, solar microinverters, and solenoid and motor drives.

Key Specifications

Parameter Conditions Min Typ Max Unit
Supply Voltage (VCC - IN_REF and VCC - VEE) 3.5 14 V
Undervoltage Lockout (UVLO) Rising VCC - IN_REF 2.4 3 3.5 V
UVLO Hysteresis 230 mV
Supply Current (ICC) 1 2 mA
Logic High Input Voltage (VIH) 2.3 V
Logic Low Input Voltage (VIL) 0.8 V
Peak Source Current (ISOURCE) OUT = VCC/2, 200ns pulsed current 3 A
Peak Sink Current (ISINK) OUT = VCC/2, 200ns pulsed current 7 A
Rise Time (tr) CLOAD = 2 nF 14 ns
Fall Time (tf) CLOAD = 2 nF 12 ns
Propagation Delay Time Low to High (td1) CLOAD = 2 nF 25 40 ns
Propagation Delay Time High to Low (td2) CLOAD = 2 nF 25 40 ns
Junction to Ambient Thermal Resistance (θJA) WSON-6 Package 40 °C/W
Junction to Case Thermal Resistance (θJC) WSON-6 Package 7.5 °C/W

Key Features

  • High peak gate drive current: 7 A sink, 3 A source
  • Fast propagation times: 25 ns typical
  • Fast rise and fall times: 14 ns rise, 12 ns fall with 2 nF load
  • Inverting and non-inverting inputs for flexible configuration
  • Supply rail undervoltage lockout protection
  • Dedicated input ground (IN_REF) for split supply or single supply operation
  • Power enhanced 6-pin WSON package or thermally enhanced MSOP-PowerPAD package
  • Output swings from VCC to VEE, which can be negative relative to input ground
  • Compound CMOS and bipolar outputs to reduce output current variation

Applications

  • DC to DC switch-mode power supplies
  • AC to DC switch-mode power supplies
  • Solar microinverters
  • Solenoid and motor drives

Q & A

  1. What is the peak gate drive current of the LM5112?

    The LM5112 can source up to 3 A and sink up to 7 A peak current.

  2. What are the typical rise and fall times of the LM5112 with a 2 nF load?

    The typical rise time is 14 ns, and the typical fall time is 12 ns.

  3. Does the LM5112 support both inverting and non-inverting inputs?
  4. What is the purpose of the undervoltage lockout (UVLO) feature in the LM5112?

    The UVLO feature prevents damage to the MOSFET by disabling the driver if the supply voltage drops below a certain threshold.

  5. What are the recommended operating voltage ranges for VCC and IN_REF?

    The minimum recommended operating voltage between VCC and IN_REF is 3.5 V, and the maximum is 14 V.

  6. Can the LM5112 operate in both single and split supply configurations?
  7. What is the significance of the compound CMOS and bipolar output stage in the LM5112?

    The compound output stage reduces output current variation with voltage and temperature.

  8. What are the thermal resistance values for the WSON-6 and MSOP-PowerPAD packages?
  9. What are some key considerations for board layout when using the LM5112?
  10. Is the LM5112 AEC-Q100 qualified?

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:N-Channel MOSFET
Voltage - Supply:3.5V ~ 14V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):3A, 7A
Input Type:Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):14ns, 12ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package:8-HVSSOP
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Similar Products

Part Number LM5112MYX LM5112MY
Manufacturer Texas Instruments National Semiconductor
Product Status Obsolete Active
Driven Configuration Low-Side Low-Side
Channel Type Single Single
Number of Drivers 1 1
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 3.5V ~ 14V 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 3A, 7A 3A, 7A
Input Type Inverting, Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) - -
Rise / Fall Time (Typ) 14ns, 12ns 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package 8-HVSSOP 8-MSOP-PowerPad

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