L6385E
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STMicroelectronics L6385E

Manufacturer No:
L6385E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC GATE DRVR HALF-BRIDGE 8DIP
Delivery:
Payment:
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Product Introduction

Overview

The L6385E is a high voltage high and low-side driver manufactured by STMicroelectronics using BCD™ “offline” technology. This device is designed to drive a half-bridge of power MOSFET or IGBT devices, making it suitable for a wide range of high-voltage applications. The L6385E features a compact design and is available in DIP-8 and SO-8 packages, as well as tape and reel options. It integrates a bootstrap diode, reducing the need for external components and enhancing reliability.

Key Specifications

Parameter Value Unit
Output Voltage (VOUT) -3 to VBOOT - 18 V V
Supply Voltage (VCC) -0.3 to +18 V V
Floating Supply Voltage (VBOOT) -1 to 618 V V
High-Side Gate Output Voltage (Vhvg) -1 to VBOOT V V
Low-Side Gate Output Voltage (Vlvg) -0.3 to VCC + 0.3 V V
Logic Input Voltage (Vi) -0.3 to VCC + 0.3 V V
Driver Current Capability (Source/Sink) 400 mA / 650 mA mA
Switching Times (Rise/Fall) 50/30 nsec with 1 nF load nsec
Junction Temperature (Tj) -45 to 125 °C °C
Thermal Resistance Junction to Ambient (Rth(JA)) 150 °C/W (SO-8), 100 °C/W (DIP-8) °C/W

Key Features

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving sections
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Compact design available in DIP-8 and SO-8 packages, as well as tape and reel options

Applications

  • Home appliances
  • Induction heating
  • HVAC
  • Motor drivers – SR motors, DC, AC, PMDC, and PMAC motors
  • Asymmetrical half-bridge topologies
  • Industrial applications and drives
  • Lighting applications
  • Factory automation
  • Power supply systems

Q & A

  1. What is the maximum high-side gate output voltage of the L6385E?

    The maximum high-side gate output voltage (Vhvg) is up to VBOOT V.

  2. What are the typical switching times for the L6385E with a 1 nF load?

    The typical switching times are 50 nsec for rise time and 30 nsec for fall time with a 1 nF load.

  3. What is the purpose of the internal bootstrap diode in the L6385E?

    The internal bootstrap diode eliminates the need for an external fast recovery diode, reducing leakage current and enhancing reliability.

  4. What are the package options available for the L6385E?

    The L6385E is available in DIP-8 and SO-8 packages, as well as tape and reel options.

  5. What is the thermal resistance junction to ambient for the SO-8 package?

    The thermal resistance junction to ambient (Rth(JA)) for the SO-8 package is 150 °C/W.

  6. What is the maximum junction temperature for the L6385E?

    The maximum junction temperature (Tj) is 150 °C.

  7. What type of logic inputs does the L6385E have?

    The L6385E has CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down.

  8. What is the driver current capability of the L6385E?

    The driver current capability is 400 mA source and 650 mA sink.

  9. What are some common applications of the L6385E?

    Common applications include home appliances, induction heating, HVAC, motor drivers, and power supply systems.

  10. Does the L6385E have undervoltage lockout protection?

    Yes, the L6385E features undervoltage lockout on both lower and upper driving sections (VCC and VBOOT).

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:17V (Max)
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-DIP
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Similar Products

Part Number L6385E L6388E L6385ED L6386E L6387E L6384E L6385 L6385D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 17V (Max) 17V (Max) 17V (Max) 17V (Max) 17V (Max) 14.6V ~ 16.6V 17V (Max) 17V (Max)
Logic Voltage - VIL, VIH 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V
Current - Peak Output (Source, Sink) 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA
Input Type Inverting Non-Inverting Inverting Inverting Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 50ns, 30ns 70ns, 40ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width) 14-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-DIP 8-DIP 8-SOIC 14-DIP 8-DIP 8-DIP 8-Mini DIP 8-SOIC

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