Overview
The NCP81080MNTBG is a high-performance dual MOSFET gate driver produced by onsemi. It is optimized to drive half-bridge N-Channel MOSFETs and features a bootstrap technique to ensure proper drive of the high-side power switch. The device includes an internal anti-cross conduction circuit with a fixed internal dead-time of 135 ns to prevent current shoot-through. Available in 2x2mm DFN and SOIC packages, the NCP81080MNTBG is designed for high-voltage applications, accommodating boost voltages up to 180 V.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDD Supply Voltage Range | 5.5 to 20 | V |
| VHB Voltage Range | -0.3 to 200 | V |
| Switching Frequency | Up to 500 kHz | |
| Propagation Delay Times | 44 ns Rising, 30 ns Falling | ns |
| Peak Source Current | 0.5 A | A |
| Peak Sink Current | 0.8 A | A |
| Operating Junction Temperature Range | -40 to 170 °C | °C |
| Storage Temperature Range | -65 to 150 °C | °C |
| Lead Temperature (Soldering, 10 sec) | +300 °C | °C |
Key Features
- Drives two N-Channel MOSFETs in high-side and low-side configuration
- Floating top driver accommodates boost voltage up to 180 V
- Internal anti-cross conduction circuit with a 135 ns fixed internal dead-time
- UVLO protection for both high-side and low-side drivers
- On-chip high voltage bootstrap diode to reduce external component count
- TTL-compatible input stage
- High and low input signals independently controlled and monitored
Applications
- Telecom and Datacom
- Isolated and non-isolated power supply architectures
- Class-D audio amplifiers
- Two-switch and active clamp forward converters
- Motor drives
Q & A
- What is the primary function of the NCP81080MNTBG? The NCP81080MNTBG is a high-performance dual MOSFET gate driver designed to drive half-bridge N-Channel MOSFETs.
- What is the maximum boost voltage the NCP81080MNTBG can accommodate? The NCP81080MNTBG can accommodate boost voltages up to 180 V.
- What is the switching frequency range of the NCP81080MNTBG? The switching frequency range is up to 500 kHz.
- What is the purpose of the internal anti-cross conduction circuit? The internal anti-cross conduction circuit prevents current shoot-through by ensuring that the high-side and low-side MOSFETs do not turn on simultaneously.
- What type of protection does the NCP81080MNTBG have for the drivers? The NCP81080MNTBG has Under Voltage Lockout (UVLO) protection for both the high-side and low-side drivers.
- What is the significance of the on-chip high voltage bootstrap diode? The on-chip high voltage bootstrap diode reduces the need for external components.
- What are the typical propagation delay times for the NCP81080MNTBG? The propagation delay times are 44 ns rising and 30 ns falling.
- What are the peak source and sink currents of the NCP81080MNTBG? The peak source current is 0.5 A, and the peak sink current is 0.8 A.
- What are the recommended operating conditions for the VDD supply voltage? The VDD supply voltage range is from 5.5 V to 20 V.
- What are some common applications of the NCP81080MNTBG? Common applications include telecom and datacom, isolated and non-isolated power supply architectures, Class-D audio amplifiers, two-switch and active clamp forward converters, and motor drives.
