Overview
The NCP81080DR2G, produced by onsemi, is a high-performance dual MOSFET gate driver designed to drive half-bridge N-Channel MOSFETs. This component is optimized for various high-frequency switching applications and features a bootstrap technique to ensure proper drive of the high-side power switch. It is available in 2x2mm DFN and SOIC-8 packages, making it versatile for different design requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDD Supply Voltage Range | 5.5 to 20 | V |
| VHB Voltage on HB | −0.3 to 200 | V |
| Switching Frequency | Up to 500 kHz | |
| Propagation Delay Times | 44 ns Rising, 30 ns Falling | ns |
| Peak Source Current | 0.5 A | A |
| Peak Sink Current | 0.8 A | A |
| Internal Dead-Time | 135 ns | ns |
| Operating Junction Temperature Range | −40 to 170 °C | °C |
| Storage Temperature Range | −65 to 150 °C | °C |
Key Features
- Drives two N-Channel MOSFETs in high-side and low-side configuration
- Floating top driver accommodates boost voltage up to 180 V
- Current shoot-through protection with 135 ns fixed internal dead-time
- High-side and low-side UVLO protection
- On-chip high voltage bootstrap diode to reduce external component count
- TTL compatible input stage
- Low output resistance for both high-side and low-side drivers
Applications
- Telecom and Datacom
- Isolated and non-isolated power supply architectures
- Class-D audio amplifiers
- Two-switch and active clamp forward converters
- Motor drives
Q & A
- What is the primary function of the NCP81080DR2G?
The NCP81080DR2G is a high-performance dual MOSFET gate driver designed to drive half-bridge N-Channel MOSFETs. - What are the available package options for the NCP81080DR2G?
The component is available in 2x2mm DFN and SOIC-8 packages. - What is the maximum switching frequency of the NCP81080DR2G?
The maximum switching frequency is up to 500 kHz. - What is the purpose of the internal dead-time in the NCP81080DR2G?
The internal dead-time of 135 ns is to prevent current shoot-through by ensuring that the high-side and low-side MOSFETs do not turn on simultaneously. - What type of protection does the NCP81080DR2G have for the high-side and low-side drivers?
The component features high-side and low-side Under Voltage Lockout (UVLO) protection. - What is the significance of the on-chip high voltage bootstrap diode?
The on-chip high voltage bootstrap diode reduces the external component count and simplifies the design. - What are the typical propagation delay times for the NCP81080DR2G?
The propagation delay times are 44 ns rising and 30 ns falling. - What is the recommended bypass capacitor for the VDD supply?
A 4.7 μF bypass capacitor is recommended for the VDD supply. - What are the key considerations for the layout of the NCP81080DR2G?
The layout should minimize inductance at the gate drive traces, keep gate drive traces short and wide, and place the input capacitor close to the IC. - Is the NCP81080DR2G suitable for new designs?
No, the NCP81080 is discontinued and not recommended for new designs. Users should contact their onsemi representative for alternative options.
