NCP5181DR2G
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onsemi NCP5181DR2G

Manufacturer No:
NCP5181DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCP5181DR2G, produced by onsemi, is a High Voltage Power MOSFET Driver designed to drive two N-channel power MOSFETs in various configurations such as half-bridge, asymmetrical half-bridge, active clamp, and full-bridge. This driver utilizes the bootstrap technique to ensure proper drive of the high-side power switch. It features independent logic inputs, making it versatile for different topologies, and is pin-to-pin compatible with the IR2181(S).

Key Specifications

Parameter Value Unit
Main Power Supply Voltage (VCC) −0.3 to 20 V
High Voltage BOOT Pin (VBOOT) −1 to 620 V
High Voltage BRIDGE Pin (VBRIDGE) −1 to 600 V
Floating Supply Voltage (VBOOT - VBRIDGE) 0 to 20 V
Output Source/Sink Current Capability 1.4 A / 2.2 A A
Input Logic Compatibility 3.3 V and 5 V V
Turn-on Propagation Delay 100 to 170 ns
Turn-off Propagation Delay 100 to 170 ns
Output Voltage Rise Time 40 to 60 ns
Output Voltage Falling Edge 20 to 40 ns
Maximum Operating Junction Temperature (TJ_max) +150 °C

Key Features

  • High Voltage Range: up to 600 V
  • dV/dt Immunity: ±50 V/nsec
  • Gate Drive Supply Range: 10 V to 20 V
  • High and Low DRV Outputs
  • Output Source/Sink Current Capability: 1.4 A / 2.2 A
  • 3.3 V and 5 V Input Logic Compatibility
  • Matched Propagation Delays between Both Channels
  • Independent Logic Inputs to Accommodate All Topologies
  • Under VCC LockOut (UVLO) for Both Channels
  • Pb-Free Device

Applications

  • High Power Energy Management
  • Half-bridge Power Converters
  • Any Complementary Drive Converters (asymmetrical half-bridge, active clamp)
  • Full-bridge Converters
  • Bridge Inverters for UPS Systems

Q & A

  1. What is the main function of the NCP5181DR2G?

    The NCP5181DR2G is a High Voltage Power MOSFET Driver designed to drive two N-channel power MOSFETs in various configurations.

  2. What is the voltage range for the main power supply (VCC)?

    The main power supply voltage (VCC) ranges from −0.3 V to 20 V.

  3. What is the maximum high voltage that the BOOT pin can handle?

    The BOOT pin can handle up to 620 V.

  4. What are the output source and sink current capabilities of the NCP5181DR2G?

    The output source current capability is 1.4 A, and the output sink current capability is 2.2 A.

  5. Is the NCP5181DR2G compatible with 3.3 V and 5 V input logic?
  6. What is the turn-on and turn-off propagation delay of the NCP5181DR2G?

    The turn-on and turn-off propagation delays are between 100 ns and 170 ns.

  7. What are the typical output voltage rise and fall times?

    The output voltage rise time is between 40 ns and 60 ns, and the fall time is between 20 ns and 40 ns.

  8. What is the maximum operating junction temperature for the NCP5181DR2G?

    The maximum operating junction temperature is +150°C.

  9. What are some common applications of the NCP5181DR2G?

    Common applications include high power energy management, half-bridge power converters, full-bridge converters, and bridge inverters for UPS systems.

  10. Is the NCP5181DR2G Pb-free?

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):1.4A, 2.2A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):40ns, 20ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NCP5181DR2G NCP5183DR2G NCP5111DR2G
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Synchronous
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 9V ~ 18V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 1.2V, 2.5V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 1.4A, 2.2A 4.3A, 4.3A 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V
Rise / Fall Time (Typ) 40ns, 20ns 12ns, 12ns 85ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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