NCP5183DR2G
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onsemi NCP5183DR2G

Manufacturer No:
NCP5183DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The NCP5183DR2G, produced by onsemi, is a High Voltage High Current Power MOSFET Driver designed to drive two N-channel power MOSFETs in a half-bridge or other high-side and low-side configurations. This driver utilizes the bootstrap technique to ensure proper drive of the high-side power switch and is compatible with various topologies such as half-bridge, asymmetrical half-bridge, active clamp, and full-bridge configurations. It features independent inputs for flexibility and is automotive qualified to AEC Q100 standards.

Key Specifications

Parameter Symbol Min Typ Max Units
Input Voltage Range VCC -0.3 - 18 V
High Side Boot Pin Voltage VB -0.3 - 618 V
Gate Drive Supply Range - 9 - 18 V
Output Source / Sink Current Capability - - 4.3 4.3 A
Propagation Delay tON, tOFF 120 - 200 ns
Maximum Operating Junction Temperature TJ(max) - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C

Key Features

  • Automotive Qualified to AEC Q100
  • Voltage Range: up to 600 V
  • dV/dt Immunity ±50 V/ns
  • 3.3 V and 5 V Input Logic Compatible
  • Extended Allowable Negative Bridge Pin Voltage Swing to –10 V
  • Matched Propagation Delays between Both Channels
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards
  • Pb-free Devices

Applications

  • Power Supplies for Telecom and Datacom
  • Half-Bridge and Full-Bridge Converters
  • Push-Pull Converters
  • High Voltage Synchronous-Buck Converters
  • Motor Controls
  • Electric Power Steering
  • Class-D Audio Amplifiers

Q & A

  1. What is the NCP5183DR2G used for?

    The NCP5183DR2G is used to drive two N-channel power MOSFETs in various configurations such as half-bridge, full-bridge, and other high-side and low-side configurations.

  2. What is the voltage range of the NCP5183DR2G?

    The NCP5183DR2G operates within a voltage range of up to 600 V.

  3. What is the output current capability of the NCP5183DR2G?

    The NCP5183DR2G has an output source/sink current capability of 4.3 A / 4.3 A.

  4. Is the NCP5183DR2G automotive qualified?
  5. What is the maximum operating junction temperature of the NCP5183DR2G?

    The maximum operating junction temperature is 150°C.

  6. What are the typical applications of the NCP5183DR2G?

    Typical applications include power supplies for telecom and datacom, half-bridge and full-bridge converters, push-pull converters, high voltage synchronous-buck converters, motor controls, electric power steering, and class-D audio amplifiers.

  7. How does the NCP5183DR2G handle high-side power switch drive?

    The NCP5183DR2G uses the bootstrap technique to ensure proper drive of the high-side power switch.

  8. What is the dV/dt immunity of the NCP5183DR2G?

    The dV/dt immunity is ±50 V/ns.

  9. Is the NCP5183DR2G Pb-free?
  10. What is the propagation delay of the NCP5183DR2G?

    The propagation delay is typically 120 ns.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:9V ~ 18V
Logic Voltage - VIL, VIH:1.2V, 2.5V
Current - Peak Output (Source, Sink):4.3A, 4.3A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):12ns, 12ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Same Series
NCP5183DR2G
NCP5183DR2G
IC GATE DRVR HALF-BRIDGE 8SOIC

Similar Products

Part Number NCP5183DR2G NCV5183DR2G NCP5181DR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Last Time Buy
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 9V ~ 18V 9V ~ 18V 10V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 2.5V 1.2V, 2.5V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 4.3A, 4.3A 4.3A, 4.3A 1.4A, 2.2A
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V
Rise / Fall Time (Typ) 12ns, 12ns 12ns, 12ns 40ns, 20ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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