NCD5701ADR2G
  • Share:

onsemi NCD5701ADR2G

Manufacturer No:
NCD5701ADR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCD5701ADR2G, produced by onsemi, is a high-current, high-performance stand-alone IGBT (Insulated Gate Bipolar Transistor) driver designed for high power applications. This device is part of the NCD5701 family, which includes variants such as NCD5701A, NCD5701B, and NCD5701C. It is particularly suited for applications like solar inverters, motor control, and uninterruptible power supplies (UPS). The NCD5701ADR2G offers a cost-effective solution by eliminating the need for external output buffers and features advanced protection mechanisms including under-voltage lockout (UVLO), desaturation protection (DESAT), and an active low FAULT output.

Key Specifications

Parameter Symbol Minimum Typical Maximum Unit
Differential Power Supply VCC−VEE 0 - 36 V
Positive Power Supply VCC−GND -0.3 - 22 V
Negative Power Supply VEE−GND -18 - 0.3 V
Gate Output High VO, VOH−GND - - VCC + 0.3 V
Gate Output Low VO, VOL−GND VEE − 0.3 - - V
Input Voltage VIN−GND -0.3 - 5.5 V
Output Current (Source/Sink) - - +4 A / −6 A A
Propagation Delay (DESAT to VO/VOL) td2−OUT - - 220 ns ns
Maximum Junction Temperature TJ(max) - - 150 °C °C
Storage Temperature Range TSTG -65 °C - 150 °C °C
Package Type - - - SOIC-8 -

Key Features

  • High Current Output: +4 A / −6 A at IGBT Miller Plateau voltages, ensuring efficient IGBT driving.
  • Low Output Impedance: Enhanced IGBT driving performance.
  • Short Propagation Delay: Accurate matching and short delay times for reliable operation.
  • DESAT Protection: Desaturation protection with programmable delay to prevent false triggering.
  • UVLO Thresholds: Tight UVLO thresholds for bias flexibility.
  • Wide Bias Voltage Range: Supports a wide range of bias supplies, including unipolar and bipolar voltages.
  • Active Miller Clamp (NCD5701A): Prevents spurious gate turn-on.
  • Negative Output Voltage (NCD5701B): Enhanced IGBT driving with negative output voltage.
  • Separate Outputs for VOL and VOH (NCD5701C): Convenience for system design.
  • RoHS Compliant: Pb-free, halogen-free, and RoHS compliant.

Applications

  • Solar Inverters: Ideal for high-power solar inverter systems.
  • Motor Control: Used in motor control applications requiring high current and reliability.
  • Uninterruptible Power Supplies (UPS): Essential for UPS systems that demand high performance and reliability.
  • Rapid Shutdown for Photovoltaic Systems: Supports rapid shutdown requirements in photovoltaic systems.

Q & A

  1. What is the NCD5701ADR2G used for?

    The NCD5701ADR2G is a high-current IGBT driver used in high power applications such as solar inverters, motor control, and uninterruptible power supplies.

  2. What are the key features of the NCD5701ADR2G?

    Key features include high current output, low output impedance, short propagation delay, DESAT protection, and wide bias voltage range.

  3. What is the maximum junction temperature of the NCD5701ADR2G?

    The maximum junction temperature is 150 °C.

  4. What is the package type of the NCD5701ADR2G?

    The package type is SOIC-8.

  5. Is the NCD5701ADR2G RoHS compliant?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  6. What is the purpose of the Active Miller Clamp in NCD5701A?

    The Active Miller Clamp prevents spurious gate turn-on during high dv/dt transitions.

  7. How does the NCD5701B differ from other variants?

    The NCD5701B offers a negative output voltage for enhanced IGBT driving.

  8. What are the typical applications of the NCD5701ADR2G?

    Typical applications include solar inverters, motor control, UPS systems, and rapid shutdown for photovoltaic systems.

  9. What is the significance of DESAT protection in the NCD5701ADR2G?

    DESAT protection detects desaturation of the IGBT due to a fault condition and prevents false triggering with a programmable blanking delay.

  10. How does the UVLO feature work in the NCD5701ADR2G?

    The UVLO feature ensures reliable switching of the IGBT by locking out the device under low bias voltage conditions.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT
Voltage - Supply:20V
Logic Voltage - VIL, VIH:- 
Current - Peak Output (Source, Sink):4A, 6A
Input Type:- 
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):18ns, 19ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$2.22
130

Please send RFQ , we will respond immediately.

Same Series
NCD5701CDR2G
NCD5701CDR2G
IC GATE DRVR HI/LOW SIDE 8SOIC
NCD5701BDR2G
NCD5701BDR2G
IC GATE DRVR LOW-SIDE 8SOIC

Similar Products

Part Number NCD5701ADR2G NCD5701CDR2G NCD5701BDR2G NCD5703ADR2G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Driven Configuration Low-Side High-Side or Low-Side Low-Side Half-Bridge
Channel Type Single Synchronous Single Single
Number of Drivers 1 1 1 1
Gate Type IGBT IGBT IGBT IGBT
Voltage - Supply 20V 20V 20V 20V
Logic Voltage - VIL, VIH - - - 0.75V, 4.3V
Current - Peak Output (Source, Sink) 4A, 6A 7.8A, 6.8A 7.8A, 6.8A 7.8A, 6.8A
Input Type - - - Non-Inverting
High Side Voltage - Max (Bootstrap) - - - -
Rise / Fall Time (Typ) 18ns, 19ns 18ns, 19ns 18ns, 19ns 9.2ns, 7.9ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC

Related Product By Categories

SN75372DR
SN75372DR
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
LM5060Q1MM/NOPB
LM5060Q1MM/NOPB
Texas Instruments
IC GATE DRVR HIGH-SIDE 10VSSOP
IR2113STRPBF
IR2113STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 16SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
FAN3227CMX
FAN3227CMX
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCV5700DR2G
NCV5700DR2G
onsemi
IC GATE DRVR HI/LOW SIDE 16SOIC
UCC27524AQDRQ1
UCC27524AQDRQ1
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC
L6494LDTR
L6494LDTR
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 14SO
L6384D
L6384D
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 8SO
UC3707NG4
UC3707NG4
Texas Instruments
IC GATE DRVR LOW-SIDE 16DIP
UCC27323DRG4
UCC27323DRG4
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC

Related Product By Brand

BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC