L6387DTR
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STMicroelectronics L6387DTR

Manufacturer No:
L6387DTR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The L6387DTR, produced by STMicroelectronics, is a high-voltage half-bridge gate driver designed for driving independent referenced N-channel power MOSFETs or IGBTs. This device is manufactured using the BCD "OFF-LINE" technology, enabling it to handle high voltage rails up to 600 V. The L6387DTR features CMOS/TTL compatible logic inputs, making it easy to interface with controlling devices. It includes an internal bootstrap diode and driver structure that simplifies the design and reduces the need for external components.

Key Specifications

Parameter Value Unit
Output Voltage (Vout) -3 to Vboot - 18 V
Supply Voltage (Vcc) -0.3 to +18 V
Floating Supply Voltage (Vboot) -1 to 618 V
Upper Gate Output Voltage (Vhvg) -1 to Vboot V
Lower Gate Output Voltage (Vlvg) -0.3 to Vcc + 0.3 V
Logic Input Voltage (Vi) -0.3 to Vcc + 0.3 V
Allowed Output Slew Rate (dVout/dt) 50 V/ns
Total Power Dissipation (Ptot) at Tj = 85 °C 750 mW
Junction Temperature (Tj) -45 to 150 °C
Storage Temperature (Ts) -50 to 150 °C
Driver Current Capability (Source/Sink) 400 mA / 650 mA mA
Switching Times (Rise/Fall) with 1 nF Load 50 ns / 30 ns ns
Logic Input Threshold Voltages (Vil/Vih) 1.5 V / 3.6 V V
Package 8-SOIC
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Key Features

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability: 400 mA source, 650 mA sink
  • Switching times: 50 ns rise, 30 ns fall with 1 nF load
  • CMOS/TTL compatible logic inputs with hysteresis and pull-down
  • Internal bootstrap diode and driver structure
  • Outputs in phase with inputs
  • ESD immunity for pins 6, 7, and 8 up to 900 V (Human Body Model)
  • Operating temperature range: -45 °C to 125 °C

Applications

The L6387DTR is suitable for various high-voltage applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • High-voltage power electronics and switching circuits
  • Renewable energy systems, such as solar and wind power inverters

Q & A

  1. What is the maximum voltage rail the L6387DTR can handle?

    The L6387DTR can handle a voltage rail up to 600 V.

  2. What are the driver current capabilities of the L6387DTR?

    The L6387DTR has a driver current capability of 400 mA source and 650 mA sink.

  3. What are the switching times of the L6387DTR with a 1 nF load?

    The switching times are 50 ns rise and 30 ns fall with a 1 nF load.

  4. Is the L6387DTR compatible with CMOS/TTL logic inputs?
  5. Does the L6387DTR have an internal bootstrap diode?
  6. What is the operating temperature range of the L6387DTR?

    The operating temperature range is -45 °C to 125 °C.

  7. What is the package type of the L6387DTR?

    The L6387DTR is packaged in an 8-SOIC.

  8. Is the L6387DTR RoHS compliant?
  9. What is the ESD immunity of the L6387DTR for certain pins?

    The ESD immunity for pins 6, 7, and 8 is up to 900 V (Human Body Model).

  10. What types of applications is the L6387DTR suitable for?

    The L6387DTR is suitable for high-voltage applications such as power supplies, motor control, industrial automation, and renewable energy systems.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:17V (Max)
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-45°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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