L6387
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STMicroelectronics L6387

Manufacturer No:
L6387
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC GATE DRVR HALF-BRIDG 8MINIDIP
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Product Introduction

Overview

The L6387E is a high-voltage gate driver manufactured by STMicroelectronics using the BCD™ “offline” technology. This device is designed to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section can operate with voltage rails up to 600 V. The L6387E features two input pins and two output pins, ensuring that the outputs toggle in phase with the inputs. The logic inputs are CMOS/TTL compatible, facilitating easy interfacing with controlling devices. The device is available in DIP-8 and SO-8 packaging options.

Key Specifications

Parameter Value
High-side Voltage Rail Up to 600 V
dV/dt Immunity ± 50 V/nsec (full temperature range)
Driver Current Capability 400 mA source, 650 mA sink
Switching Times 50/30 nsec rise/fall with 1 nF load
Logic Inputs CMOS/TTL Schmitt trigger with hysteresis and pull-down
Bootstrap Diode Internal bootstrap diode
Output Synchronization Outputs in phase with inputs
Interlocking Function Prevents simultaneous high driving
Operating Temperature -40°C to 150°C
Package Options DIP-8, SO-8

Key Features

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability: 400 mA source, 650 mA sink
  • Switching times: 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Interlocking function to prevent simultaneous high driving

Applications

The L6387E is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • High-voltage power management systems

Q & A

  1. What is the maximum high-side voltage rail for the L6387E?

    The maximum high-side voltage rail for the L6387E is up to 600 V.

  2. What are the driver current capabilities of the L6387E?

    The L6387E can source 400 mA and sink 650 mA.

  3. What is the switching time of the L6387E with a 1 nF load?

    The switching times are 50/30 nsec rise/fall with a 1 nF load.

  4. Does the L6387E have internal bootstrap diode?

    Yes, the L6387E features an internal bootstrap diode.

  5. What is the operating temperature range of the L6387E?

    The operating temperature range is -40°C to 150°C.

  6. What are the package options available for the L6387E?

    The device is available in DIP-8 and SO-8 packaging options.

  7. Are the logic inputs of the L6387E CMOS/TTL compatible?

    Yes, the logic inputs are CMOS/TTL compatible with Schmitt trigger and pull-down.

  8. Does the L6387E have an interlocking function?

    Yes, it has an interlocking function to prevent simultaneous high driving.

  9. What is the dV/dt immunity of the L6387E?

    The dV/dt immunity is ± 50 V/nsec in the full temperature range.

  10. How do the outputs of the L6387E synchronize with the inputs?

    The outputs toggle in phase with the inputs.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:17V (Max)
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-45°C ~ 125°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-Mini DIP
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Similar Products

Part Number L6387 L6387D L6388 L6387E L6384 L6385 L6386
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 17V (Max) 17V (Max) 17V (Max) 17V (Max) 14.6V ~ 16.6V 17V (Max) 17V (Max)
Logic Voltage - VIL, VIH 1.5V, 3.6V 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V
Current - Peak Output (Source, Sink) 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA
Input Type Inverting Inverting Inverting Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 50ns, 30ns 50ns, 30ns 70ns, 40ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns
Operating Temperature -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 14-DIP (0.300", 7.62mm)
Supplier Device Package 8-Mini DIP 8-SOIC 8-Mini DIP 8-DIP 8-Mini DIP 8-Mini DIP 14-DIP

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