Overview
The LMG1210RVRR from Texas Instruments is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver. It is designed for ultra-high frequency, high-efficiency applications, featuring adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side to low-side matching to optimize system efficiency. The device includes an internal LDO that ensures a gate-drive voltage of 5-V regardless of the supply voltage, making it versatile for various power management and high-frequency applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Operating Frequency | Up to 50 MHz | |
| Propagation Delay | 10 ns (typical) | ns |
| High-Side to Low-Side Matching | 3.4 ns (typical) | ns |
| Minimum Pulse Width | 4 ns | ns |
| Peak Source Current | 1.5 A | A |
| Peak Sink Current | 3 A | A |
| Input Voltage Range (LDO) | 6 V to 18 V | V |
| Gate-Drive Voltage (LDO Output) | 5 V | V |
| Temperature Range | –40°C to 125°C | °C |
| Package Type | Low-inductance WQFN (19-pin) | |
| Package Size | 3.00 mm × 4.00 mm | mm |
Key Features
- Two control input modes: Independent Input Mode (IIM) and PWM mode with adjustable dead time from 0 to 20 ns.
- External bootstrap diode for flexibility and an internal switch to prevent overcharging of the high-side bootstrap capacitor.
- Internal LDO for adaptability to voltage rails, ensuring a gate-drive voltage of 5-V.
- High 300-V/ns CMTI for increased dV/dt noise immunity.
- Low-inductance WQFN package to minimize voltage overshoot.
- UVLO and overtemperature protection for enhanced reliability.
- Minimal parasitic capacitance across the GaN FET (less than 1 pF) to reduce switching losses.
Applications
- High-speed DC-DC converters.
- RF envelope tracking.
- Class-D audio amplifiers.
- Class-E wireless charging.
- High-precision motor control.
Q & A
- What is the maximum operating frequency of the LMG1210RVRR?
The LMG1210RVRR can operate up to 50 MHz. - What is the typical propagation delay of the LMG1210RVRR?
The typical propagation delay is 10 ns. - What is the high-side to low-side matching time of the LMG1210RVRR?
The high-side to low-side matching time is 3.4 ns (typical). - What are the peak source and sink currents of the LMG1210RVRR?
The peak source current is 1.5 A, and the peak sink current is 3 A. - What is the input voltage range for the LDO in the LMG1210RVRR?
The input voltage range for the LDO is 6 V to 18 V. - What is the gate-drive voltage provided by the internal LDO?
The internal LDO ensures a gate-drive voltage of 5 V. - What are the temperature range and package type of the LMG1210RVRR?
The temperature range is –40°C to 125°C, and it is offered in a low-inductance WQFN (19-pin) package. - What are the key protection features of the LMG1210RVRR?
The device features UVLO (Undervoltage Lockout) and overtemperature protection. - How does the LMG1210RVRR minimize switching losses?
The device minimizes parasitic capacitance across the GaN FET to less than 1 pF and includes an internal switch to prevent overcharging of the high-side bootstrap capacitor. - What are some common applications of the LMG1210RVRR?
Common applications include high-speed DC-DC converters, RF envelope tracking, Class-D audio amplifiers, Class-E wireless charging, and high-precision motor control.
