NCV5183DR2G
  • Share:

onsemi NCV5183DR2G

Manufacturer No:
NCV5183DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCV5183DR2G, produced by onsemi, is a High Voltage High Current Power MOSFET Driver designed to drive two N-channel power MOSFETs in a half-bridge or other high-side and low-side configurations. This driver utilizes the bootstrap technique to ensure proper drive of the high-side power switch and supports various topologies such as half-bridge, asymmetrical half-bridge, active clamp, and full-bridge configurations. It features two independent inputs, making it versatile for different application needs.

Key Specifications

Parameter Symbol Min Typ Max Units
Voltage Range V 600 V
Gate Drive Supply Range VCC 9 18 V
Output Source / Sink Current Capability I 4.3 4.3 4.3 A
dV/dt Immunity dV/dt ±50 V/ns
Propagation Delay tPD 120 ns
Output Voltage Rise Time tr 40 ns
Output Voltage Fall Time tf 40 ns
Maximum Operating Junction Temperature TJ(max) 150 °C
Storage Temperature Range TSTG -55 150 °C

Key Features

  • Automotive Qualified to AEC Q100
  • Voltage Range up to 600 V with dV/dt Immunity ±50 V/ns
  • Gate Drive Supply Range from 9 V to 18 V
  • Output Source / Sink Current Capability 4.3 A / 4.3 A
  • Extended Allowable Negative Bridge Pin Voltage Swing to –10 V
  • Matched Propagation Delays between Both Channels
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards
  • Pb-free Devices

Applications

  • Power Supplies for Telecom and Datacom
  • Half-Bridge and Full-Bridge Converters
  • Push-Pull Converters
  • High Voltage Synchronous-Buck Converters
  • Motor Controls
  • Electric Power Steering
  • Class-D Audio Amplifiers
  • Automotive power conversion

Q & A

  1. What is the NCV5183DR2G used for?

    The NCV5183DR2G is used as a High Voltage High Current Power MOSFET Driver to drive two N-channel power MOSFETs in various configurations such as half-bridge, full-bridge, and more.

  2. What is the voltage range of the NCV5183DR2G?

    The voltage range of the NCV5183DR2G is up to 600 V.

  3. What is the gate drive supply range for the NCV5183DR2G?

    The gate drive supply range is from 9 V to 18 V.

  4. What is the output current capability of the NCV5183DR2G?

    The output source and sink current capability is 4.3 A each.

  5. Is the NCV5183DR2G automotive qualified?
  6. What are the typical propagation delays for the NCV5183DR2G?

    The typical propagation delay is 120 ns.

  7. What is the maximum operating junction temperature for the NCV5183DR2G?

    The maximum operating junction temperature is 150°C.

  8. What are some common applications of the NCV5183DR2G?

    Common applications include power supplies for telecom and datacom, half-bridge and full-bridge converters, motor controls, and electric power steering.

  9. Is the NCV5183DR2G Pb-free?
  10. What package type is the NCV5183DR2G available in?

    The NCV5183DR2G is available in an SOIC-8 package.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:9V ~ 18V
Logic Voltage - VIL, VIH:1.2V, 2.5V
Current - Peak Output (Source, Sink):4.3A, 4.3A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):12ns, 12ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$2.72
243

Please send RFQ , we will respond immediately.

Same Series
NCP5183DR2G
NCP5183DR2G
IC GATE DRVR HALF-BRIDGE 8SOIC

Similar Products

Part Number NCV5183DR2G NCP5183DR2G
Manufacturer onsemi onsemi
Product Status Active Active
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 9V ~ 18V 9V ~ 18V
Logic Voltage - VIL, VIH 1.2V, 2.5V 1.2V, 2.5V
Current - Peak Output (Source, Sink) 4.3A, 4.3A 4.3A, 4.3A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V
Rise / Fall Time (Typ) 12ns, 12ns 12ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

MC34152DR2G
MC34152DR2G
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
L6386ADTR
L6386ADTR
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 14SO
ADP3110KRZ
ADP3110KRZ
Analog Devices Inc.
DUAL BOOTSTRAPPED 12 VOLT MOSFET
FAN3180TSX
FAN3180TSX
onsemi
IC GATE DRVR LOW-SIDE SOT23-5
ADP3654ARHZ-RL
ADP3654ARHZ-RL
Analog Devices Inc.
IC GATE DRVR LOW-SIDE 8MINISOIC
FAN7391MX
FAN7391MX
onsemi
IC GATE DRVR HALF-BRIDGE 14SOP
LM5111-1MX/NOPB
LM5111-1MX/NOPB
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC
NCP5109BDR2G
NCP5109BDR2G
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
UCC27524ADGN
UCC27524ADGN
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
NCP81151BMNTBG
NCP81151BMNTBG
onsemi
IC GATE DRVR HALF-BRIDGE 8DFN
FAN73896MX
FAN73896MX
onsemi
IC GATE DRVR HALF-BRIDGE 28SOIC
L6387D
L6387D
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 8SO

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB