MC33151DR2G
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onsemi MC33151DR2G

Manufacturer No:
MC33151DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MC33151DR2G, produced by Onsemi, is a high-speed dual MOSFET driver designed to interface low current digital circuitry with power MOSFETs. This device is constructed using Schottky clamped Bipolar Analog technology, offering high performance and ruggedness in hostile industrial environments. It features two independent channels with high current totem pole outputs, making it ideal for driving large capacitive loads with high slew rates.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Power Supply Voltage VCC - - 20 V
Logic Input Voltage Vin -0.3 - VCC V
Drive Output Current IO - - 1.5 A
Input Threshold Voltage VIH/VIL 0.8 1.67 2.6 V
Input Current - High State IIH - - 200 μA
Input Current - Low State IIL - - 20 μA
Output Rise Time (10% to 90%, CL = 1.0 nF) tr - 14 - ns
Output Fall Time (90% to 10%, CL = 1.0 nF) tf - 16 - ns
Operating Ambient Temperature TA -40 - 85 °C
Operating Junction Temperature TJ - - 150 °C

Key Features

  • Two independent channels with 1.5 A totem pole output
  • Output rise and fall times of 15 ns with 1000 pF load
  • CMOS/LSTTL compatible inputs with hysteresis
  • Undervoltage lockout with hysteresis to prevent erratic system operation at low supply voltages
  • Low standby current
  • Efficient high frequency operation
  • Enhanced system performance with common switching regulator control ICs
  • Pb-Free and Halide-Free devices
  • Internal diode to VCC for clamping positive voltage transients

Applications

  • Switching power supplies
  • DC to DC converters
  • Capacitor charge pump voltage doublers/inverters
  • Motor controllers
  • High frequency printed circuit applications requiring low current digital circuitry to drive large capacitive loads

Q & A

  1. What is the primary function of the MC33151DR2G?

    The MC33151DR2G is a high-speed dual MOSFET driver designed to interface low current digital circuitry with power MOSFETs.

  2. What are the key features of the MC33151DR2G's input stage?

    The input stage features CMOS/LSTTL compatible inputs with hysteresis, ensuring fast output switching independent of input transition time.

  3. What is the maximum output current capability of each channel?

    Each totem pole drive output is capable of sourcing and sinking up to 1.5 A.

  4. What is the purpose of the undervoltage lockout (UVLO) in the MC33151DR2G?

    The UVLO prevents erratic system operation at low supply voltages by forcing the drive outputs into a low state as VCC rises from 1.4 V to the 5.8 V upper threshold.

  5. What are the typical applications of the MC33151DR2G?

    Typical applications include switching power supplies, DC to DC converters, capacitor charge pump voltage doublers/inverters, and motor controllers.

  6. What is the operating ambient temperature range for the MC33151DR2G?

    The operating ambient temperature range is -40°C to +85°C.

  7. How does the MC33151DR2G handle output ringing and overshoot?

    The device includes internal diodes to clamp positive and negative voltage transients, and external Schottky diodes can be used to reduce driver power dissipation due to excessive ringing.

  8. What are the package options available for the MC33151DR2G?

    The device is available in SOIC-8 (Pb-Free) and PDIP-8 (Pb-Free) packages.

  9. Is the MC33151DR2G immune to output latchup conditions?

    Yes, the MC33151DR2G is immune to output latchup conditions.

  10. What is the significance of the 100 kΩ pulldown resistor in the output stage?

    The 100 kΩ pulldown resistor keeps the MOSFET gate low when VCC is less than 1.4 V.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:6.5V ~ 18V
Logic Voltage - VIL, VIH:0.8V, 2.6V
Current - Peak Output (Source, Sink):1.5A, 1.5A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):31ns, 32ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number MC33151DR2G MC33152DR2G MC34151DR2G MC33153DR2G MC33151VDR2G MC33151DR2
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent Single Independent Independent
Number of Drivers 2 2 2 1 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 6.5V ~ 18V 6.1V ~ 18V 6.5V ~ 18V 11V ~ 20V 6.5V ~ 18V 6.5V ~ 18V
Logic Voltage - VIL, VIH 0.8V, 2.6V 0.8V, 2.6V 0.8V, 2.6V 1.2V, 3.2V 0.8V, 2.6V 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A 1.5A, 1.5A 1.5A, 1.5A 1A, 2A 1.5A, 1.5A 1.5A, 1.5A
Input Type Inverting Non-Inverting Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - - - -
Rise / Fall Time (Typ) 31ns, 32ns 36ns, 32ns 31ns, 32ns 17ns, 17ns 31ns, 32ns 31ns, 32ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) 0°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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