MC33151DR2G
  • Share:

onsemi MC33151DR2G

Manufacturer No:
MC33151DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MC33151DR2G, produced by Onsemi, is a high-speed dual MOSFET driver designed to interface low current digital circuitry with power MOSFETs. This device is constructed using Schottky clamped Bipolar Analog technology, offering high performance and ruggedness in hostile industrial environments. It features two independent channels with high current totem pole outputs, making it ideal for driving large capacitive loads with high slew rates.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Power Supply Voltage VCC - - 20 V
Logic Input Voltage Vin -0.3 - VCC V
Drive Output Current IO - - 1.5 A
Input Threshold Voltage VIH/VIL 0.8 1.67 2.6 V
Input Current - High State IIH - - 200 μA
Input Current - Low State IIL - - 20 μA
Output Rise Time (10% to 90%, CL = 1.0 nF) tr - 14 - ns
Output Fall Time (90% to 10%, CL = 1.0 nF) tf - 16 - ns
Operating Ambient Temperature TA -40 - 85 °C
Operating Junction Temperature TJ - - 150 °C

Key Features

  • Two independent channels with 1.5 A totem pole output
  • Output rise and fall times of 15 ns with 1000 pF load
  • CMOS/LSTTL compatible inputs with hysteresis
  • Undervoltage lockout with hysteresis to prevent erratic system operation at low supply voltages
  • Low standby current
  • Efficient high frequency operation
  • Enhanced system performance with common switching regulator control ICs
  • Pb-Free and Halide-Free devices
  • Internal diode to VCC for clamping positive voltage transients

Applications

  • Switching power supplies
  • DC to DC converters
  • Capacitor charge pump voltage doublers/inverters
  • Motor controllers
  • High frequency printed circuit applications requiring low current digital circuitry to drive large capacitive loads

Q & A

  1. What is the primary function of the MC33151DR2G?

    The MC33151DR2G is a high-speed dual MOSFET driver designed to interface low current digital circuitry with power MOSFETs.

  2. What are the key features of the MC33151DR2G's input stage?

    The input stage features CMOS/LSTTL compatible inputs with hysteresis, ensuring fast output switching independent of input transition time.

  3. What is the maximum output current capability of each channel?

    Each totem pole drive output is capable of sourcing and sinking up to 1.5 A.

  4. What is the purpose of the undervoltage lockout (UVLO) in the MC33151DR2G?

    The UVLO prevents erratic system operation at low supply voltages by forcing the drive outputs into a low state as VCC rises from 1.4 V to the 5.8 V upper threshold.

  5. What are the typical applications of the MC33151DR2G?

    Typical applications include switching power supplies, DC to DC converters, capacitor charge pump voltage doublers/inverters, and motor controllers.

  6. What is the operating ambient temperature range for the MC33151DR2G?

    The operating ambient temperature range is -40°C to +85°C.

  7. How does the MC33151DR2G handle output ringing and overshoot?

    The device includes internal diodes to clamp positive and negative voltage transients, and external Schottky diodes can be used to reduce driver power dissipation due to excessive ringing.

  8. What are the package options available for the MC33151DR2G?

    The device is available in SOIC-8 (Pb-Free) and PDIP-8 (Pb-Free) packages.

  9. Is the MC33151DR2G immune to output latchup conditions?

    Yes, the MC33151DR2G is immune to output latchup conditions.

  10. What is the significance of the 100 kΩ pulldown resistor in the output stage?

    The 100 kΩ pulldown resistor keeps the MOSFET gate low when VCC is less than 1.4 V.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:6.5V ~ 18V
Logic Voltage - VIL, VIH:0.8V, 2.6V
Current - Peak Output (Source, Sink):1.5A, 1.5A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):31ns, 32ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$1.96
457

Please send RFQ , we will respond immediately.

Same Series
MC34151DR2G
MC34151DR2G
IC GATE DRVR LOW-SIDE 8SOIC
MC33151DG
MC33151DG
IC GATE DRVR LOW-SIDE 8SOIC
MC33151PG
MC33151PG
IC GATE DRVR LOW-SIDE 8DIP
MC33151DR2G
MC33151DR2G
IC GATE DRVR LOW-SIDE 8SOIC
MC33151VDR2G
MC33151VDR2G
IC GATE DRVR LOW-SIDE 8SOIC
MC34151DG
MC34151DG
IC GATE DRVR LOW-SIDE 8SOIC
MC34151D
MC34151D
IC GATE DRVR LOW-SIDE 8SOIC
MC34151P
MC34151P
IC GATE DRVR LOW-SIDE 8DIP
MC34151PG
MC34151PG
IC GATE DRVR LOW-SIDE 8DIP
MC33151DR2
MC33151DR2
IC GATE DRVR LOW-SIDE 8SOIC
MC33151P
MC33151P
IC GATE DRVR LOW-SIDE 8DIP
MC34151DR2
MC34151DR2
IC GATE DRVR LOW-SIDE 8SOIC

Similar Products

Part Number MC33151DR2G MC33152DR2G MC34151DR2G MC33153DR2G MC33151VDR2G MC33151DR2
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent Single Independent Independent
Number of Drivers 2 2 2 1 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 6.5V ~ 18V 6.1V ~ 18V 6.5V ~ 18V 11V ~ 20V 6.5V ~ 18V 6.5V ~ 18V
Logic Voltage - VIL, VIH 0.8V, 2.6V 0.8V, 2.6V 0.8V, 2.6V 1.2V, 3.2V 0.8V, 2.6V 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A 1.5A, 1.5A 1.5A, 1.5A 1A, 2A 1.5A, 1.5A 1.5A, 1.5A
Input Type Inverting Non-Inverting Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - - - -
Rise / Fall Time (Typ) 31ns, 32ns 36ns, 32ns 31ns, 32ns 17ns, 17ns 31ns, 32ns 31ns, 32ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) 0°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

Related Product By Categories

UCC37322D
UCC37322D
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC
ADP3110KRZ
ADP3110KRZ
Analog Devices Inc.
DUAL BOOTSTRAPPED 12 VOLT MOSFET
NCP5106ADR2G
NCP5106ADR2G
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
L6399DTR
L6399DTR
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 8SO
UCC27524DGNR
UCC27524DGNR
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
LM5111-1MY/NOPB
LM5111-1MY/NOPB
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
LMG1205YFXT
LMG1205YFXT
Texas Instruments
IC GATE DRVR HALF-BRIDGE 12DSBGA
LM5101CSD/NOPB
LM5101CSD/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 10WSON
UCC27524AQDGNRQ1
UCC27524AQDGNRQ1
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
MC34151D
MC34151D
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
L9856-TR
L9856-TR
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
L9857-TR
L9857-TR
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223