MC33151DR2
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onsemi MC33151DR2

Manufacturer No:
MC33151DR2
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The MC33151DR2, produced by ON Semiconductor, is a high-speed dual MOSFET driver designed for applications requiring low current digital circuitry to drive large capacitive loads with high slew rates. This device features two independent channels with high current totem pole outputs, making it ideal for driving power MOSFETs. It is compatible with CMOS and LSTTL logic inputs and includes input hysteresis for fast output switching. The MC33151DR2 also includes an undervoltage lockout with hysteresis to prevent erratic system operation at low supply voltages.

Key Specifications

Parameter Value Unit
Power Supply Voltage (VCC) 6.5 to 18 V
Logic Input Voltage (Vin) -0.3 to VCC V
Drive Output Current (Source/Sink) 1.5 A
Output Rise Time (10% to 90%, CL = 1.0 nF) 14 ns
Output Fall Time (90% to 10%, CL = 1.0 nF) 16 ns
Propagation Delay (10% Input to 10% Output, CL = 1.0 nF) 35-36 ns
Operating Ambient Temperature -40 to +85 °C
Package Type SOIC-8

Key Features

  • Two independent channels with 1.5 A totem pole output
  • CMOS/LSTTL compatible inputs with hysteresis
  • Undervoltage lockout with hysteresis
  • Low standby current
  • Efficient high frequency operation
  • Enhanced system performance with common switching regulator control ICs
  • Pin out equivalent to DS0026 and MMH0026
  • Pb-Free and Halide-Free devices

Applications

  • Switching power supplies
  • DC to DC converters
  • Capacitor charge pump voltage doublers/inverters
  • Motor controllers

Q & A

  1. What is the primary function of the MC33151DR2?

    The MC33151DR2 is a high-speed dual MOSFET driver designed to drive large capacitive loads with high slew rates.

  2. What are the compatible logic families for the MC33151DR2 inputs?

    The inputs are compatible with CMOS and LSTTL logic families.

  3. What is the maximum drive output current of the MC33151DR2?

    The maximum drive output current is 1.5 A.

  4. What is the purpose of the undervoltage lockout in the MC33151DR2?

    The undervoltage lockout prevents erratic system operation at low supply voltages.

  5. What are the typical applications of the MC33151DR2?

    Typical applications include switching power supplies, DC to DC converters, capacitor charge pump voltage doublers/inverters, and motor controllers.

  6. What is the operating ambient temperature range for the MC33151DR2?

    The operating ambient temperature range is -40 to +85°C.

  7. What package types are available for the MC33151DR2?

    The device is available in SOIC-8 packages.

  8. Does the MC33151DR2 have overcurrent or thermal protection?

    No, the device does not have overcurrent or thermal protection.

  9. How does the MC33151DR2 handle output ringing during transitions?

    The device contains internal diodes to clamp positive voltage transients and an NPN pullup transistor to clamp negative output transients.

  10. Is the MC33151DR2 Pb-Free and Halide-Free?

    Yes, the MC33151DR2 is Pb-Free and Halide-Free.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:6.5V ~ 18V
Logic Voltage - VIL, VIH:0.8V, 2.6V
Current - Peak Output (Source, Sink):1.5A, 1.5A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):31ns, 32ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number MC33151DR2 MC33151DR2G MC33153DR2 MC33152DR2 MC33151VDR2 MC34151DR2
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Single Independent Independent Independent
Number of Drivers 2 2 1 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 6.5V ~ 18V 6.5V ~ 18V 11V ~ 20V 6.1V ~ 18V 6.5V ~ 18V 6.5V ~ 18V
Logic Voltage - VIL, VIH 0.8V, 2.6V 0.8V, 2.6V 1.2V, 3.2V 0.8V, 2.6V 0.8V, 2.6V 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A 1.5A, 1.5A 1A, 2A 1.5A, 1.5A 1.5A, 1.5A 1.5A, 1.5A
Input Type Inverting Inverting Inverting Non-Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - - - -
Rise / Fall Time (Typ) 31ns, 32ns 31ns, 32ns 17ns, 17ns 36ns, 32ns 31ns, 32ns 31ns, 32ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) 0°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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