L6386ED
  • Share:

STMicroelectronics L6386ED

Manufacturer No:
L6386ED
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The L6386ED is a high-voltage gate driver IC manufactured by STMicroelectronics using BCD (Bipolar-CMOS-DMOS) technology. This device is designed to drive one high-side and one low-side power MOSFET or IGBT simultaneously, making it suitable for a variety of high-power applications. The L6386ED is known for its robust performance and high reliability in demanding environments.

Key Specifications

ParameterValue
High Voltage RailUp to 600V
dV/dt Immunity± 50 V/nsec (full temperature range)
Driver Current Capability400 mA Source, 650 mA Sink
PackageSO14
Channels2
Maximum Frequency400 kHz
Power Dissipation750 mW

Key Features

  • High voltage rail up to 600V
  • High dV/dt immunity (± 50 V/nsec) across the full temperature range
  • High current capability: 400 mA source and 650 mA sink
  • Ability to drive both high-side and low-side power MOSFET or IGBT devices
  • Compact SO14 package
  • Operates up to 400 kHz

Applications

The L6386ED is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor drives and control systems
  • Industrial automation and control systems
  • High-voltage power systems and inverters

Q & A

  1. What is the maximum high voltage rail for the L6386ED?
    The maximum high voltage rail for the L6386ED is up to 600V.
  2. What is the dV/dt immunity of the L6386ED?
    The dV/dt immunity of the L6386ED is ± 50 V/nsec across the full temperature range.
  3. What is the driver current capability of the L6386ED?
    The driver current capability of the L6386ED is 400 mA source and 650 mA sink.
  4. What type of package does the L6386ED come in?
    The L6386ED comes in a SO14 package.
  5. How many channels does the L6386ED have?
    The L6386ED has 2 channels.
  6. What is the maximum operating frequency of the L6386ED?
    The maximum operating frequency of the L6386ED is up to 400 kHz.
  7. What is the power dissipation of the L6386ED?
    The power dissipation of the L6386ED is 750 mW.
  8. Can the L6386ED drive both high-side and low-side MOSFET or IGBT devices?
    Yes, the L6386ED can drive both high-side and low-side power MOSFET or IGBT devices simultaneously.
  9. What are some common applications for the L6386ED?
    The L6386ED is commonly used in power supplies, DC-DC converters, motor drives, industrial automation, and high-voltage power systems.
  10. Where can I find detailed specifications for the L6386ED?
    Detailed specifications for the L6386ED can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and SOS electronic.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:17V (Max)
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SO
0 Remaining View Similar

In Stock

$1.80
62

Please send RFQ , we will respond immediately.

Same Series
L6386ED013TR
L6386ED013TR
IC GATE DRVR HALF-BRIDGE 14SO
L6386E
L6386E
IC GATE DRVR HALF-BRIDGE 14DIP

Similar Products

Part Number L6386ED L6388ED L6387ED L6389ED L6384ED L6385ED L6386AD L6386D L6386E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent Synchronous Independent Independent Independent Independent
Number of Drivers 2 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 17V (Max) 17V (Max) 17V (Max) 17V (Max) 14.6V ~ 16.6V 17V (Max) 17V (Max) 17V (Max) 17V (Max)
Logic Voltage - VIL, VIH 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V
Current - Peak Output (Source, Sink) 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA
Input Type Inverting Non-Inverting Inverting Inverting Inverting Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 50ns, 30ns 70ns, 40ns 50ns, 30ns 70ns, 40ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Package / Case 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 14-DIP (0.300", 7.62mm)
Supplier Device Package 14-SO 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 14-SO 14-SO 14-DIP

Related Product By Categories

UC3708N
UC3708N
Texas Instruments
IC GATE DRVR LOW-SIDE 8DIP
MC34152DR2G
MC34152DR2G
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
ADP3624ARHZ
ADP3624ARHZ
Analog Devices Inc.
IC GATE DRVR LOW-SIDE 8MSOP
DRV8300DIPWR
DRV8300DIPWR
Texas Instruments
100-V MAX SIMPLE 3-PHASE GATE DR
LM5110-1M/NOPB
LM5110-1M/NOPB
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC
LM5060Q1MMX/NOPB
LM5060Q1MMX/NOPB
Texas Instruments
IC GATE DRVR HIGH-SIDE 10VSSOP
UCC27201DRMR
UCC27201DRMR
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8VSON
FAN3227CMX-F085
FAN3227CMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LM5101AMRX/NOPB
LM5101AMRX/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8SOPWR
L6387D
L6387D
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 8SO
L6569D
L6569D
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 8SO
UCC27324DGNG4
UCC27324DGNG4
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA