L6386ED
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STMicroelectronics L6386ED

Manufacturer No:
L6386ED
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The L6386ED is a high-voltage gate driver IC manufactured by STMicroelectronics using BCD (Bipolar-CMOS-DMOS) technology. This device is designed to drive one high-side and one low-side power MOSFET or IGBT simultaneously, making it suitable for a variety of high-power applications. The L6386ED is known for its robust performance and high reliability in demanding environments.

Key Specifications

ParameterValue
High Voltage RailUp to 600V
dV/dt Immunity± 50 V/nsec (full temperature range)
Driver Current Capability400 mA Source, 650 mA Sink
PackageSO14
Channels2
Maximum Frequency400 kHz
Power Dissipation750 mW

Key Features

  • High voltage rail up to 600V
  • High dV/dt immunity (± 50 V/nsec) across the full temperature range
  • High current capability: 400 mA source and 650 mA sink
  • Ability to drive both high-side and low-side power MOSFET or IGBT devices
  • Compact SO14 package
  • Operates up to 400 kHz

Applications

The L6386ED is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor drives and control systems
  • Industrial automation and control systems
  • High-voltage power systems and inverters

Q & A

  1. What is the maximum high voltage rail for the L6386ED?
    The maximum high voltage rail for the L6386ED is up to 600V.
  2. What is the dV/dt immunity of the L6386ED?
    The dV/dt immunity of the L6386ED is ± 50 V/nsec across the full temperature range.
  3. What is the driver current capability of the L6386ED?
    The driver current capability of the L6386ED is 400 mA source and 650 mA sink.
  4. What type of package does the L6386ED come in?
    The L6386ED comes in a SO14 package.
  5. How many channels does the L6386ED have?
    The L6386ED has 2 channels.
  6. What is the maximum operating frequency of the L6386ED?
    The maximum operating frequency of the L6386ED is up to 400 kHz.
  7. What is the power dissipation of the L6386ED?
    The power dissipation of the L6386ED is 750 mW.
  8. Can the L6386ED drive both high-side and low-side MOSFET or IGBT devices?
    Yes, the L6386ED can drive both high-side and low-side power MOSFET or IGBT devices simultaneously.
  9. What are some common applications for the L6386ED?
    The L6386ED is commonly used in power supplies, DC-DC converters, motor drives, industrial automation, and high-voltage power systems.
  10. Where can I find detailed specifications for the L6386ED?
    Detailed specifications for the L6386ED can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and SOS electronic.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:17V (Max)
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SO
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Similar Products

Part Number L6386ED L6388ED L6387ED L6389ED L6384ED L6385ED L6386AD L6386D L6386E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent Synchronous Independent Independent Independent Independent
Number of Drivers 2 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 17V (Max) 17V (Max) 17V (Max) 17V (Max) 14.6V ~ 16.6V 17V (Max) 17V (Max) 17V (Max) 17V (Max)
Logic Voltage - VIL, VIH 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V
Current - Peak Output (Source, Sink) 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA
Input Type Inverting Non-Inverting Inverting Inverting Inverting Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 50ns, 30ns 70ns, 40ns 50ns, 30ns 70ns, 40ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns 50ns, 30ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Package / Case 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 14-DIP (0.300", 7.62mm)
Supplier Device Package 14-SO 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 14-SO 14-SO 14-DIP

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