MC33152DR2G
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onsemi MC33152DR2G

Manufacturer No:
MC33152DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MC33152DR2G, produced by onsemi, is a dual noninverting high-speed driver designed to interface low current digital circuitry with power MOSFETs. This device is constructed using Schottky clamped Bipolar Analog technology, offering high performance and ruggedness in hostile industrial environments. It features two independent channels with high current totem pole outputs, making it ideal for driving large capacitive loads with high slew rates.

Key Specifications

Characteristics Symbol Min Typ Max Unit
Power Supply Voltage VCC 20 V
Logic Inputs Vin -0.3 +VCC V
Totem Pole Sink or Source Current IO 1.5 A
Operating Ambient Temperature TA -40 +85 °C
Storage Temperature Range Tstg -65 +150 °C
Input Threshold Voltage VIH/VIL 0.8 1.67 2.6 V
Output Rise Time (10% to 90%) tr 14 ns
Output Fall Time (90% to 10%) tf 15 ns
Propagation Delay (CL = 1.0 nF) tPLH/tPHL 55/40 ns
Startup Threshold Vth 5.8 6.1 V

Key Features

  • Two independent channels with 1.5 A totem pole outputs, suitable for driving power MOSFETs.
  • CMOS/LSTTL compatible inputs with hysteresis for fast output switching independent of input transition time.
  • Low input current, making it compatible with CMOS and LSTTL logic families.
  • Undervoltage lockout with hysteresis to prevent system erratic operation at low supply voltages.
  • Internal diode to VCC for clamping positive voltage transients and NPN pullup transistor for negative output transients.
  • Immune to output latchup conditions.
  • Available in SOIC-8 and PDIP-8 packages.

Applications

  • Switching power supplies.
  • DC-to-DC converters.
  • Capacitor charge pump voltage doublers/inverters.
  • Motor controllers.
  • Noise-sensitive applications where controlled MOSFET turn-on and turn-off times are necessary.

Q & A

  1. What is the primary function of the MC33152DR2G?

    The MC33152DR2G is a dual noninverting high-speed driver designed to interface low current digital circuitry with power MOSFETs.

  2. What are the key features of the MC33152DR2G's inputs?

    The inputs are CMOS/LSTTL compatible with hysteresis, ensuring fast output switching independent of input transition time, and each input has a 30 kΩ pulldown resistor.

  3. What is the maximum current capability of the totem pole outputs?

    The totem pole outputs can source and sink up to 1.5 A.

  4. What is the operating ambient temperature range for the MC33152?

    The operating ambient temperature range is -40°C to +85°C.

  5. What is the purpose of the undervoltage lockout feature?

    The undervoltage lockout feature prevents system erratic operation at low supply voltages.

  6. How does the device protect against output latchup conditions?

    The device is immune to output latchup conditions due to its internal circuit design.

  7. What types of packages are available for the MC33152DR2G?

    The device is available in SOIC-8 and PDIP-8 packages.

  8. What are some typical applications for the MC33152DR2G?

    Typical applications include switching power supplies, DC-to-DC converters, capacitor charge pump voltage doublers/inverters, and motor controllers.

  9. How does the device handle positive and negative output transients?

    The device contains an internal diode to VCC for clamping positive voltage transients and an NPN pullup transistor for negative output transients.

  10. What is the significance of the input hysteresis in the MC33152DR2G?

    The input hysteresis provides fast output switching that is independent of the input signal transition time, preventing output oscillations.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:6.1V ~ 18V
Logic Voltage - VIL, VIH:0.8V, 2.6V
Current - Peak Output (Source, Sink):1.5A, 1.5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):36ns, 32ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number MC33152DR2G MC34152DR2G MC33152VDR2G MC33153DR2G MC33151DR2G MC33152DR2
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent Single Independent Independent
Number of Drivers 2 2 2 1 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 6.1V ~ 18V 6.1V ~ 18V 6.1V ~ 18V 11V ~ 20V 6.5V ~ 18V 6.1V ~ 18V
Logic Voltage - VIL, VIH 0.8V, 2.6V 0.8V, 2.6V 0.8V, 2.6V 1.2V, 3.2V 0.8V, 2.6V 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A 1.5A, 1.5A 1.5A, 1.5A 1A, 2A 1.5A, 1.5A 1.5A, 1.5A
Input Type Non-Inverting Non-Inverting Non-Inverting Inverting Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) - - - - - -
Rise / Fall Time (Typ) 36ns, 32ns 36ns, 32ns 36ns, 32ns 17ns, 17ns 31ns, 32ns 36ns, 32ns
Operating Temperature -40°C ~ 150°C (TJ) 0°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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