Overview
The LM5110-1M/NOPB is a dual 5-A compound gate driver produced by Texas Instruments. This device is designed to drive two independent N-channel MOSFETs with high current capability and fast switching times. The LM5110 features a unique compound output stage that combines MOS and bipolar transistors, reducing output current variation with voltage and temperature. It is available in SOIC-8 and WSON-10 packages, offering flexibility in design and thermal management.
The gate driver includes TTL-compatible logic inputs, a dedicated input ground pin (IN_REF), and a shutdown input pin for low power mode. The outputs can swing from VCC to VEE, which can be negative relative to the input ground, allowing for negative drive capability. This makes the LM5110 suitable for a variety of applications requiring robust and efficient MOSFET gate driving.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| VCC Operating Range | 3.5 | - | 14 | V |
| VCC Under Voltage Lockout (rising) | 2.3 | 2.9 | 3.5 | V |
| VCC Under Voltage Lockout Hysteresis | - | - | 230 mV | mV |
| ICC VCC Supply Current | 1 | 2 | 2 | mA |
| ICCSD VCC Shutdown Current | 18 | 25 | - | µA |
| VIH Logic High | - | - | 2.2 | V |
| VIL Logic Low | 0.8 | - | - | V |
| Output Current Capability | - | - | 5A sink / 3A source | A |
| Rise and Fall Times (with 2-nF load) | 14 ns | - | 12 ns | ns |
| Propagation Times | - | 25 ns | - | ns |
Key Features
- Independently drives two N-channel MOSFETs with TTL-compatible logic inputs.
- Compound CMOS and bipolar outputs reduce output current variation with voltage and temperature.
- 5A sink and 3A source current capability per channel; channels can be connected in parallel to double the drive current.
- Dedicated input ground pin (IN_REF) for split supply or single supply operation.
- Outputs swing from VCC to VEE, which can be negative relative to IN_REF.
- Shutdown input provides low power mode with total supply current less than 25 µA.
- Supply rail undervoltage lockout protection.
- Pin-out compatible with industry standard gate drivers.
- Available in dual noninverting, dual inverting, and combination inverting plus noninverting configurations.
- Fast propagation times (25-ns typical) and fast rise and fall times (14-ns/12-ns with 2-nF load).
Applications
- Synchronous rectifier gate drivers.
- Switch-mode power supply gate drivers.
- Solenoid and motor drivers.
The LM5110 is versatile and can be used in various applications where high current and efficient MOSFET gate driving are required.
Q & A
- What is the output current capability of the LM5110?
The LM5110 can sink up to 5A and source up to 3A per channel. Channels can be connected in parallel to double the drive current.
- What are the typical propagation and rise/fall times of the LM5110?
The typical propagation time is 25 ns, and the rise and fall times are 14 ns and 12 ns, respectively, with a 2-nF load.
- What is the purpose of the dedicated input ground pin (IN_REF)?
The dedicated input ground pin (IN_REF) allows for split supply or single supply operation and provides negative drive capability.
- How does the shutdown input function work?
The shutdown input pin (SHDN) switches the device to a low power standby mode when pulled below 1.5V, reducing the total supply current to less than 25 µA.
- What are the available package options for the LM5110?
The LM5110 is available in SOIC-8 and WSON-10 packages.
- What is the VCC operating range for the LM5110?
The VCC operating range is from 3.5V to 14V.
- Does the LM5110 have undervoltage lockout protection?
Yes, the LM5110 has supply rail undervoltage lockout protection.
- Can the LM5110 be used in parallel configuration?
Yes, the channels of the LM5110 can be connected in parallel to double the drive current capability.
- What are some common applications of the LM5110?
- How does the compound output stage of the LM5110 benefit its performance?
The compound output stage, which combines MOS and bipolar transistors, reduces output current variation with voltage and temperature, enhancing overall performance and efficiency.
