IR2101STRPBF
  • Share:

Infineon Technologies IR2101STRPBF

Manufacturer No:
IR2101STRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IR2101STRPBF is a high-performance gate driver IC produced by Infineon Technologies. This component is designed to drive IGBTs and MOSFETs, offering both high-side and low-side gate driving capabilities. It is available in an 8 Lead SOIC package and is also offered in an 8 Lead PDIP package. The IR2101STRPBF is part of the EiceDRIVER™ family, known for its robust and reliable performance in various power management applications.

Key Specifications

SpecificationValue
Voltage Rating600 V
Package Type8 Lead SOIC, 8 Lead PDIP
Source CurrentTypical 0.21 A
Sink CurrentTypical 0.36 A
Gate Drive Supply Range10 V to 20 V
Logic Input Compatibility3.3 V, 5 V, 15 V
Operating Temperature-40°C to 125°C
Propagation DelayMatched for both channels
Transient Voltage ToleranceTolerant to negative transient voltage
dV/dt ImmunityYes
Undervoltage LockoutYes

Key Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Matched propagation delay for both channels
  • Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)

Applications

The IR2101STRPBF is suitable for a variety of power management applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor drives and control systems
  • Industrial automation and control systems
  • Renewable energy systems such as solar and wind power
  • High-power audio amplifiers

Q & A

  1. What is the voltage rating of the IR2101STRPBF?
    The IR2101STRPBF has a voltage rating of 600 V.
  2. What types of packages are available for the IR2101STRPBF?
    The IR2101STRPBF is available in 8 Lead SOIC and 8 Lead PDIP packages.
  3. What are the typical source and sink currents of the IR2101STRPBF?
    The typical source current is 0.21 A, and the typical sink current is 0.36 A.
  4. What is the gate drive supply range for the IR2101STRPBF?
    The gate drive supply range is from 10 V to 20 V.
  5. Is the IR2101STRPBF compatible with different logic input voltages?
    Yes, it is compatible with 3.3 V, 5 V, and 15 V logic inputs.
  6. What is the operating temperature range of the IR2101STRPBF?
    The operating temperature range is -40°C to 125°C.
  7. Is the IR2101STRPBF tolerant to negative transient voltages?
    Yes, it is tolerant to negative transient voltages.
  8. Does the IR2101STRPBF have undervoltage lockout?
    Yes, it has undervoltage lockout.
  9. What are some potential applications of the IR2101STRPBF?
    Potential applications include power supplies, motor drives, industrial automation, renewable energy systems, and high-power audio amplifiers.
  10. Is the IR2101STRPBF dV/dt immune?
    Yes, it is dV/dt immune.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 3V
Current - Peak Output (Source, Sink):210mA, 360mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):100ns, 50ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$2.49
370

Please send RFQ , we will respond immediately.

Same Series
IR2102SPBF
IR2102SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
IR2102STRPBF
IR2102STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
IR2101PBF
IR2101PBF
IC GATE DRVR HALF-BRIDGE 8DIP
IR2101SPBF
IR2101SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
IR2102PBF
IR2102PBF
IC GATE DRVR HALF-BRIDGE 8DIP
IR2101
IR2101
IC GATE DRVR HALF-BRIDGE 8DIP
IR2101S
IR2101S
IC GATE DRVR HALF-BRIDGE 8SOIC
IR2102
IR2102
IC GATE DRVR HALF-BRIDGE 8DIP
IR2102S
IR2102S
IC GATE DRVR HALF-BRIDGE 8SOIC
IR2101STR
IR2101STR
IC GATE DRVR HALF-BRIDGE 8SOIC
IR2102STR
IR2102STR
IC GATE DRVR HALF-BRIDGE 8SOIC

Similar Products

Part Number IR2101STRPBF IR2104STRPBF IR2103STRPBF IR2109STRPBF IR2111STRPBF IR2102STRPBF IR21091STRPBF IR2108STRPBF IR2106STRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Synchronous Independent Synchronous Synchronous Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 2.9V 8.3V, 12.6V 0.8V, 3V 0.8V, 2.9V 0.8V, 2.9V 0.8V, 2.9V
Current - Peak Output (Source, Sink) 210mA, 360mA 210mA, 360mA 210mA, 360mA 200mA, 350mA 250mA, 500mA 210mA, 360mA 200mA, 350mA 200mA, 350mA 200mA, 350mA
Input Type Non-Inverting Non-Inverting Inverting, Non-Inverting Non-Inverting Non-Inverting - Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 100ns, 50ns 100ns, 50ns 100ns, 50ns 150ns, 50ns 80ns, 40ns 100ns, 50ns 150ns, 50ns 150ns, 50ns 150ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

Related Product By Categories

UCC27524DSDT
UCC27524DSDT
Texas Instruments
IC GATE DRVR LOW-SIDE 8SON
ADP3654ARHZ-RL
ADP3654ARHZ-RL
Analog Devices Inc.
IC GATE DRVR LOW-SIDE 8MINISOIC
ADP3630ARMZ-R7
ADP3630ARMZ-R7
Analog Devices Inc.
IC GATE DRVR LOW-SIDE 8MSOP
LMG1205YFXR
LMG1205YFXR
Texas Instruments
IC GATE DRVR HALF-BRIDGE 12DSBGA
UCC27212AQDDARQ1
UCC27212AQDDARQ1
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8SOPWR
LM5108DRCR
LM5108DRCR
Texas Instruments
IC GATE DRVR PWR MGMT
UCC27322DGN
UCC27322DGN
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
UCC27201DRMT
UCC27201DRMT
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8VSON
LM5101CSD/NOPB
LM5101CSD/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 10WSON
NCP81166MNTBG
NCP81166MNTBG
onsemi
IC GATE DRVR HALF-BRIDGE
LM5106SDX/NOPB
LM5106SDX/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 10WSON
ADP3634ARDZ-R7
ADP3634ARDZ-R7
Analog Devices Inc.
IC GATE DRVR LOW-SIDE 8SOIC

Related Product By Brand

BAT54-05WH6327
BAT54-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS7004SH6327XTSA1
BAS7004SH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS40-06B5000
BAS40-06B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS1602WH6327XTSA1
BAS1602WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
BC846SH6727XTSA1
BC846SH6727XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IRF100B201
IRF100B201
Infineon Technologies
MOSFET N-CH 100V 192A TO220AB