IR2101STRPBF
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Infineon Technologies IR2101STRPBF

Manufacturer No:
IR2101STRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IR2101STRPBF is a high-performance gate driver IC produced by Infineon Technologies. This component is designed to drive IGBTs and MOSFETs, offering both high-side and low-side gate driving capabilities. It is available in an 8 Lead SOIC package and is also offered in an 8 Lead PDIP package. The IR2101STRPBF is part of the EiceDRIVER™ family, known for its robust and reliable performance in various power management applications.

Key Specifications

SpecificationValue
Voltage Rating600 V
Package Type8 Lead SOIC, 8 Lead PDIP
Source CurrentTypical 0.21 A
Sink CurrentTypical 0.36 A
Gate Drive Supply Range10 V to 20 V
Logic Input Compatibility3.3 V, 5 V, 15 V
Operating Temperature-40°C to 125°C
Propagation DelayMatched for both channels
Transient Voltage ToleranceTolerant to negative transient voltage
dV/dt ImmunityYes
Undervoltage LockoutYes

Key Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Matched propagation delay for both channels
  • Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)

Applications

The IR2101STRPBF is suitable for a variety of power management applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor drives and control systems
  • Industrial automation and control systems
  • Renewable energy systems such as solar and wind power
  • High-power audio amplifiers

Q & A

  1. What is the voltage rating of the IR2101STRPBF?
    The IR2101STRPBF has a voltage rating of 600 V.
  2. What types of packages are available for the IR2101STRPBF?
    The IR2101STRPBF is available in 8 Lead SOIC and 8 Lead PDIP packages.
  3. What are the typical source and sink currents of the IR2101STRPBF?
    The typical source current is 0.21 A, and the typical sink current is 0.36 A.
  4. What is the gate drive supply range for the IR2101STRPBF?
    The gate drive supply range is from 10 V to 20 V.
  5. Is the IR2101STRPBF compatible with different logic input voltages?
    Yes, it is compatible with 3.3 V, 5 V, and 15 V logic inputs.
  6. What is the operating temperature range of the IR2101STRPBF?
    The operating temperature range is -40°C to 125°C.
  7. Is the IR2101STRPBF tolerant to negative transient voltages?
    Yes, it is tolerant to negative transient voltages.
  8. Does the IR2101STRPBF have undervoltage lockout?
    Yes, it has undervoltage lockout.
  9. What are some potential applications of the IR2101STRPBF?
    Potential applications include power supplies, motor drives, industrial automation, renewable energy systems, and high-power audio amplifiers.
  10. Is the IR2101STRPBF dV/dt immune?
    Yes, it is dV/dt immune.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 3V
Current - Peak Output (Source, Sink):210mA, 360mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):100ns, 50ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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$2.49
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Similar Products

Part Number IR2101STRPBF IR2104STRPBF IR2103STRPBF IR2109STRPBF IR2111STRPBF IR2102STRPBF IR21091STRPBF IR2108STRPBF IR2106STRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Synchronous Independent Synchronous Synchronous Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 2.9V 8.3V, 12.6V 0.8V, 3V 0.8V, 2.9V 0.8V, 2.9V 0.8V, 2.9V
Current - Peak Output (Source, Sink) 210mA, 360mA 210mA, 360mA 210mA, 360mA 200mA, 350mA 250mA, 500mA 210mA, 360mA 200mA, 350mA 200mA, 350mA 200mA, 350mA
Input Type Non-Inverting Non-Inverting Inverting, Non-Inverting Non-Inverting Non-Inverting - Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 100ns, 50ns 100ns, 50ns 100ns, 50ns 150ns, 50ns 80ns, 40ns 100ns, 50ns 150ns, 50ns 150ns, 50ns 150ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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