MJD32CT4
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STMicroelectronics MJD32CT4

Manufacturer No:
MJD32CT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 3A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The MJD32CT4-A is an automotive-grade low voltage PNP power transistor manufactured by STMicroelectronics. This transistor is produced using planar technology with a 'base island' layout, which results in exceptional high gain performance and very low saturation voltage. It is packaged in a surface-mounting TO-252 (DPAK) package and is available in tape and reel packing for ease of use in automated assembly processes.

Key Specifications

Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0 A) -100 V
VCEO Collector-emitter voltage (IB = 0 A) -100 V
VEBO Emitter-base voltage (IC = 0 A) -5 V
IC Collector current -3 A
ICM Collector peak current -5 A
IB Base current -1 A
PTOT Total power dissipation at TC = 25 °C 15 W
Tstg Storage temperature range -65 to 150 °C
TJ Operating junction temperature range - °C
RthJC Thermal resistance, junction-to-case 8.3 °C/W
RthJA Thermal resistance, junction-to-ambient 50 °C/W
VCE(sat) Collector-emitter saturation voltage -1.2 V
VBE(on) Base-emitter on voltage -1.8 V
hFE DC current gain 25 - 50 -

Key Features

  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Surface-mounting TO-252 (DPAK) package.
  • Packing in tape and reel for automated assembly.
  • High gain performance and very low saturation voltage.
  • Complementary to the NPN type MJD31CT4-A.
  • Manufactured in planar technology with a 'base island' layout.
  • ECOPACK compliant for environmental sustainability.

Applications

The MJD32CT4-A is designed for general purpose linear and switching equipment. It is particularly suited for applications requiring high gain and low saturation voltage, such as in automotive systems, industrial control circuits, and other high-reliability environments.

Q & A

  1. What is the maximum collector current of the MJD32CT4-A?

    The maximum collector current is -3 A.

  2. What is the maximum collector-emitter voltage of the MJD32CT4-A?

    The maximum collector-emitter voltage is -100 V.

  3. What is the thermal resistance, junction-to-case, of the MJD32CT4-A?

    The thermal resistance, junction-to-case, is 8.3 °C/W.

  4. Is the MJD32CT4-A AEC-Q101 qualified?

    Yes, the MJD32CT4-A is AEC-Q101 qualified.

  5. What is the package type of the MJD32CT4-A?

    The package type is TO-252 (DPAK).

  6. What is the typical DC current gain of the MJD32CT4-A?

    The typical DC current gain is between 25 and 50.

  7. What is the collector-emitter saturation voltage of the MJD32CT4-A?

    The collector-emitter saturation voltage is -1.2 V.

  8. What is the base-emitter on voltage of the MJD32CT4-A?

    The base-emitter on voltage is -1.8 V.

  9. Is the MJD32CT4-A available in tape and reel packing?

    Yes, it is available in tape and reel packing.

  10. What are the typical applications of the MJD32CT4-A?

    The typical applications include general purpose linear and switching equipment, particularly in automotive and industrial control circuits.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:15 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Same Series
MJD32C
MJD32C
TRANS PNP 100V 3A DPAK

Similar Products

Part Number MJD32CT4 MJD32CT4G MJD32CTM MJD32CTF MJD42CT4 MJD32T4 MJD31CT4
Manufacturer STMicroelectronics onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi STMicroelectronics
Product Status Active Active Obsolete Active Obsolete Obsolete Active
Transistor Type PNP PNP PNP PNP PNP PNP NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 6 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 40 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 50µA 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 25 @ 1A, 4V 15 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Power - Max 15 W 1.56 W 1.56 W 1.56 W 20 W 15 W 15 W
Frequency - Transition - 3MHz 3MHz 3MHz 3MHz 3MHz -
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) - 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK TO-252-3 (DPAK) TO-252-3 (DPAK) DPAK DPAK DPAK

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