FDC6306P
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onsemi FDC6306P

Manufacturer No:
FDC6306P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 1.9A SSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC6306P is a dual P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This technology is designed to minimize on-state resistance, making the MOSFET highly efficient for various applications. The device is packaged in a 6-pin SuperSOT™-6 surface mount package, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current)1.9 A
VGS (Gate-Source Voltage)±2.5 V
RDS(ON) (On-State Resistance)Typically 70 mΩ at VGS = -2.5 V
PD (Power Dissipation)700 mW
Package6-Pin SuperSOT™-6

Key Features

  • Advanced PowerTrench process for low on-state resistance
  • Dual P-Channel configuration for enhanced functionality
  • Compact SuperSOT™-6 package for space-saving designs
  • Low threshold voltage of 2.5 V for easy switching
  • High current handling capability of up to 1.9 A

Applications

The FDC6306P is suitable for a variety of applications, including but not limited to:

  • Power management circuits
  • Load switching and control
  • Audio and video switching
  • Low voltage power supplies
  • Portable electronics and battery-powered devices

Q & A

  1. What is the maximum drain-source voltage of the FDC6306P?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the continuous drain current rating of the FDC6306P?
    The continuous drain current (ID) is 1.9 A.
  3. What is the typical on-state resistance of the FDC6306P?
    The typical on-state resistance (RDS(ON)) is 70 mΩ at VGS = -2.5 V.
  4. What package type is the FDC6306P available in?
    The FDC6306P is available in a 6-pin SuperSOT™-6 package.
  5. What is the power dissipation rating of the FDC6306P?
    The power dissipation (PD) is 700 mW.
  6. What is the gate-source voltage range for the FDC6306P?
    The gate-source voltage (VGS) range is ±2.5 V.
  7. What process technology is used in the FDC6306P?
    The FDC6306P uses the advanced PowerTrench process.
  8. What are some common applications for the FDC6306P?
    Common applications include power management circuits, load switching and control, audio and video switching, low voltage power supplies, and portable electronics.
  9. Is the FDC6306P suitable for high-current applications?
    Yes, the FDC6306P can handle up to 1.9 A of continuous drain current, making it suitable for high-current applications.
  10. Where can I find detailed specifications for the FDC6306P?
    Detailed specifications can be found in the datasheet available from sources like Mouser Electronics, Digi-Key, and the onsemi website.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.9A
Rds On (Max) @ Id, Vgs:170mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:441pF @ 10V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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Similar Products

Part Number FDC6306P FDC6308P FDG6306P FDC6506P FDC6302P FDC6304P
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Active Obsolete Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate - Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 20V 30V 25V 25V
Current - Continuous Drain (Id) @ 25°C 1.9A 1.7A (Ta) 600mA 1.8A 120mA 460mA
Rds On (Max) @ Id, Vgs 170mOhm @ 1.9A, 4.5V 180mOhm @ 1.7A, 4.5V 420mOhm @ 600mA, 4.5V 170mOhm @ 1.8A, 10V 10Ohm @ 200mA, 4.5V 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 3V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V 5nC @ 4.5V 2nC @ 4.5V 3.5nC @ 10V 0.31nC @ 4.5V 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 441pF @ 10V 265pF @ 10V 114pF @ 10V 190pF @ 15V 11pF @ 10V 62pF @ 10V
Power - Max 700mW 700mW (Ta) 300mW 700mW 700mW 700mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 6-TSSOP, SC-88, SOT-363 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SC-88 (SC-70-6) SuperSOT™-6 SuperSOT™-6 SuperSOT™-6

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