Overview
The FDS89141 is a dual N-Channel MOSFET array produced by onsemi, utilizing an advanced Power Trench® process. This component is designed to optimize rDS(on), switching performance, and ruggedness, making it suitable for a variety of power management and switching applications. The MOSFET array is packaged in an 8-SOIC surface mount configuration, facilitating ease of integration into modern electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 100 | V |
| ID (Continuous Drain Current per Channel) | 3.5 | A |
| rDS(on) (On-Resistance) | Typically 40 mΩ at VGS = 10 V | mΩ |
| PD (Power Dissipation) | 1.6 | W |
| Package | 8-SOIC |
Key Features
The FDS89141 features several key attributes that make it a robust choice for various applications:
- Advanced Power Trench® Process: Optimized for low rDS(on), high switching performance, and ruggedness.
- Dual N-Channel Configuration: Allows for the control of two separate channels, enhancing flexibility in circuit design.
- High Voltage and Current Ratings: Supports up to 100V and 3.5A per channel, making it suitable for high-power applications.
- Surface Mount Package: The 8-SOIC package facilitates easy integration into surface mount technology (SMT) designs.
Applications
The FDS89141 is versatile and can be used in a variety of applications, including:
- Power Management: Ideal for power supply circuits, voltage regulators, and DC-DC converters.
- Switching Circuits: Suitable for high-frequency switching applications such as motor control, audio amplifiers, and power amplifiers.
- Automotive Systems: Can be used in automotive electronics for functions like battery management and power distribution.
- Industrial Control Systems: Applicable in industrial control circuits for motor drives, power supplies, and other high-power applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the FDS89141?
The maximum drain-source voltage (VDS) of the FDS89141 is 100V.
- What is the continuous drain current (ID) per channel for the FDS89141?
The continuous drain current (ID) per channel for the FDS89141 is 3.5A.
- What is the typical on-resistance (rDS(on)) of the FDS89141?
The typical on-resistance (rDS(on)) of the FDS89141 is 40 mΩ at VGS = 10 V.
- In what package is the FDS89141 available?
The FDS89141 is available in an 8-SOIC surface mount package.
- What process is used to manufacture the FDS89141?
The FDS89141 is manufactured using an advanced Power Trench® process.
- What are some common applications for the FDS89141?
The FDS89141 is commonly used in power management, switching circuits, automotive systems, and industrial control systems.
- What is the power dissipation (PD) rating of the FDS89141?
The power dissipation (PD) rating of the FDS89141 is 1.6W.
- Is the FDS89141 suitable for high-frequency switching applications?
Yes, the FDS89141 is suitable for high-frequency switching applications due to its optimized switching performance.
- Can the FDS89141 be used in automotive electronics?
Yes, the FDS89141 can be used in automotive electronics for various power management and control functions.
- Where can I find detailed specifications for the FDS89141?
Detailed specifications for the FDS89141 can be found in the datasheet available on the onsemi website and other electronic component distributors like Digi-Key and TME.
