2N7002DWQ-13-F
  • Share:

Diodes Incorporated 2N7002DWQ-13-F

Manufacturer No:
2N7002DWQ-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT363 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWQ-13-F is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and motor control applications. The MOSFET features a low on-state resistance (RDS(ON)) and low gate threshold voltage, which are crucial for minimizing power losses and enhancing overall system efficiency.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 60 V
On-Resistance (Max) RDS(ON) 7.5Ω @ VGS = 5V Ω
Continuous Drain Current (Max) ID 0.23 A @ TA = +25°C A
Gate-Source Voltage (Continuous) VGSS ±20 V V
Input Capacitance (Max) Ciss 50 pF @ VDS = 25V pF
Turn-On Delay Time tD(ON) 7.0 - 20 ns ns
Turn-Off Delay Time tD(OFF) 11.0 - 20 ns ns
Package SOT-363
Operating Temperature Range TJ -55 to +150 °C °C

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-363)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Applications

  • Motor Control
  • Power Management Functions
  • Automotive Applications (AEC-Q101 qualified)

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002DWQ-13-F MOSFET?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the on-state resistance (RDS(ON)) of the 2N7002DWQ-13-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  3. What is the continuous drain current (ID) of the 2N7002DWQ-13-F MOSFET at 25°C?

    The continuous drain current (ID) is 0.23 A at TA = +25°C.

  4. What is the input capacitance (Ciss) of the 2N7002DWQ-13-F MOSFET?

    The input capacitance (Ciss) is 50 pF at VDS = 25V.

  5. What is the turn-on delay time (tD(ON)) of the 2N7002DWQ-13-F MOSFET?

    The turn-on delay time (tD(ON)) is between 7.0 and 20 ns.

  6. What is the package type of the 2N7002DWQ-13-F MOSFET?

    The package type is SOT-363.

  7. Is the 2N7002DWQ-13-F MOSFET RoHS compliant?

    Yes, the 2N7002DWQ-13-F MOSFET is fully RoHS compliant and lead-free.

  8. What are the typical applications of the 2N7002DWQ-13-F MOSFET?

    The typical applications include motor control and power management functions, particularly in automotive systems.

  9. What is the operating temperature range of the 2N7002DWQ-13-F MOSFET?

    The operating temperature range is -55 to +150 °C.

  10. Is the 2N7002DWQ-13-F MOSFET qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.12
2,264

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
FDMC8030
FDMC8030
onsemi
MOSFET 2N-CH 40V 12A 8POWER33
IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
CSD87588N
CSD87588N
Texas Instruments
MOSFET 2N-CH 30V 25A 5PTAB
CSD87502Q2T
CSD87502Q2T
Texas Instruments
MOSFET 2N-CH 30V 5A 6WSON
CSD88584Q5DCT
CSD88584Q5DCT
Texas Instruments
MOSFET 2N-CH 40V 22-VSON-CLIP
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
NTMD6N02R2G
NTMD6N02R2G
onsemi
MOSFET 2N-CH 20V 3.92A 8SOIC
NVMFD5C470NLT1G
NVMFD5C470NLT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
PHKD13N03LT,518
PHKD13N03LT,518
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
PSMN4R8-100BSE,118
PSMN4R8-100BSE,118
Nexperia USA Inc.
N CHANNEL 100V 4.8 MOHM STANDAR
NTMFD5C674NLT1G
NTMFD5C674NLT1G
onsemi
T6 60V LL S08FL DS

Related Product By Brand

BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV21WQ-7-F
BAV21WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV70W-7-F-79
BAV70W-7-F-79
Diodes Incorporated
DIODE GEN PURPOSE
BZX84C2V4TS-7-F
BZX84C2V4TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 2.4V SOT363
BZX84C4V3TS-7-F
BZX84C4V3TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 4.3V SOT363
BZX84C20-7
BZX84C20-7
Diodes Incorporated
DIODE ZENER 20V 300MW SOT23-3
BZX84C5V1-7-F-79
BZX84C5V1-7-F-79
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BCX5416TA
BCX5416TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
2N7002-13-F-79
2N7002-13-F-79
Diodes Incorporated
DIODE
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP
LM2903AQM8-13
LM2903AQM8-13
Diodes Incorporated
IC COMP DUAL DIFFERENTIAL 8MSOP