2N7002DWQ-13-F
  • Share:

Diodes Incorporated 2N7002DWQ-13-F

Manufacturer No:
2N7002DWQ-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT363 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWQ-13-F is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and motor control applications. The MOSFET features a low on-state resistance (RDS(ON)) and low gate threshold voltage, which are crucial for minimizing power losses and enhancing overall system efficiency.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 60 V
On-Resistance (Max) RDS(ON) 7.5Ω @ VGS = 5V Ω
Continuous Drain Current (Max) ID 0.23 A @ TA = +25°C A
Gate-Source Voltage (Continuous) VGSS ±20 V V
Input Capacitance (Max) Ciss 50 pF @ VDS = 25V pF
Turn-On Delay Time tD(ON) 7.0 - 20 ns ns
Turn-Off Delay Time tD(OFF) 11.0 - 20 ns ns
Package SOT-363
Operating Temperature Range TJ -55 to +150 °C °C

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-363)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Applications

  • Motor Control
  • Power Management Functions
  • Automotive Applications (AEC-Q101 qualified)

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002DWQ-13-F MOSFET?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the on-state resistance (RDS(ON)) of the 2N7002DWQ-13-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  3. What is the continuous drain current (ID) of the 2N7002DWQ-13-F MOSFET at 25°C?

    The continuous drain current (ID) is 0.23 A at TA = +25°C.

  4. What is the input capacitance (Ciss) of the 2N7002DWQ-13-F MOSFET?

    The input capacitance (Ciss) is 50 pF at VDS = 25V.

  5. What is the turn-on delay time (tD(ON)) of the 2N7002DWQ-13-F MOSFET?

    The turn-on delay time (tD(ON)) is between 7.0 and 20 ns.

  6. What is the package type of the 2N7002DWQ-13-F MOSFET?

    The package type is SOT-363.

  7. Is the 2N7002DWQ-13-F MOSFET RoHS compliant?

    Yes, the 2N7002DWQ-13-F MOSFET is fully RoHS compliant and lead-free.

  8. What are the typical applications of the 2N7002DWQ-13-F MOSFET?

    The typical applications include motor control and power management functions, particularly in automotive systems.

  9. What is the operating temperature range of the 2N7002DWQ-13-F MOSFET?

    The operating temperature range is -55 to +150 °C.

  10. Is the 2N7002DWQ-13-F MOSFET qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.12
2,264

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
ECH8667-TL-HX-SA
ECH8667-TL-HX-SA
Sanyo
P-CHANNEL SILICON MOSFET
EFC2J013NUZTDG
EFC2J013NUZTDG
onsemi
MOSFET N-CH 12V 17A WLCSP6 DUAL
2N7002DWQ-7-F
2N7002DWQ-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT363
BUK7K17-60EX
BUK7K17-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 30A 56LFPAK
NTZD5110NT1G
NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 294MA SOT563
FDC6561AN
FDC6561AN
onsemi
MOSFET 2N-CH 30V 2.5A SSOT6
FDG6335N
FDG6335N
onsemi
MOSFET 2N-CH 20V 0.7A SOT-363
CSD88584Q5DC
CSD88584Q5DC
Texas Instruments
MOSFET 2 N-CH 40V 22-VSON-CLIP
EFC4C002NLTDG
EFC4C002NLTDG
onsemi
MOSFET 2N-CH 8WLCSP
NTMFD4901NFT1G
NTMFD4901NFT1G
onsemi
MOSFET 2N-CH 30V 8DFN
NTLUD3A50PZTAGHW
NTLUD3A50PZTAGHW
onsemi
MOSFET 2P-CH 20V 2.8A UDFN

Related Product By Brand

BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAS16VA-7
BAS16VA-7
Diodes Incorporated
FAST SWITCHING DIODE SOT563 T&R
BAS21TWQ-7
BAS21TWQ-7
Diodes Incorporated
DIODE ARRAY GP 250V 200MA SOT363
BAV21W-7-F
BAV21W-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
1N4148WSQ-7-F
1N4148WSQ-7-F
Diodes Incorporated
DIODE GEN PURP 75V 250MA SOD323
BZX84C3V9TS-7-F
BZX84C3V9TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.9V SOT363
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84C47Q-7-F
BZX84C47Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C2V4-7-F-79
BZX84C2V4-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
2N7002W-7-F
2N7002W-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT323