2N7002DWQ-13-F
  • Share:

Diodes Incorporated 2N7002DWQ-13-F

Manufacturer No:
2N7002DWQ-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT363 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWQ-13-F is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and motor control applications. The MOSFET features a low on-state resistance (RDS(ON)) and low gate threshold voltage, which are crucial for minimizing power losses and enhancing overall system efficiency.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 60 V
On-Resistance (Max) RDS(ON) 7.5Ω @ VGS = 5V Ω
Continuous Drain Current (Max) ID 0.23 A @ TA = +25°C A
Gate-Source Voltage (Continuous) VGSS ±20 V V
Input Capacitance (Max) Ciss 50 pF @ VDS = 25V pF
Turn-On Delay Time tD(ON) 7.0 - 20 ns ns
Turn-Off Delay Time tD(OFF) 11.0 - 20 ns ns
Package SOT-363
Operating Temperature Range TJ -55 to +150 °C °C

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-363)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Applications

  • Motor Control
  • Power Management Functions
  • Automotive Applications (AEC-Q101 qualified)

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002DWQ-13-F MOSFET?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the on-state resistance (RDS(ON)) of the 2N7002DWQ-13-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  3. What is the continuous drain current (ID) of the 2N7002DWQ-13-F MOSFET at 25°C?

    The continuous drain current (ID) is 0.23 A at TA = +25°C.

  4. What is the input capacitance (Ciss) of the 2N7002DWQ-13-F MOSFET?

    The input capacitance (Ciss) is 50 pF at VDS = 25V.

  5. What is the turn-on delay time (tD(ON)) of the 2N7002DWQ-13-F MOSFET?

    The turn-on delay time (tD(ON)) is between 7.0 and 20 ns.

  6. What is the package type of the 2N7002DWQ-13-F MOSFET?

    The package type is SOT-363.

  7. Is the 2N7002DWQ-13-F MOSFET RoHS compliant?

    Yes, the 2N7002DWQ-13-F MOSFET is fully RoHS compliant and lead-free.

  8. What are the typical applications of the 2N7002DWQ-13-F MOSFET?

    The typical applications include motor control and power management functions, particularly in automotive systems.

  9. What is the operating temperature range of the 2N7002DWQ-13-F MOSFET?

    The operating temperature range is -55 to +150 °C.

  10. Is the 2N7002DWQ-13-F MOSFET qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.12
2,264

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
2N7002DWQ-7-F
2N7002DWQ-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT363
CSD87502Q2T
CSD87502Q2T
Texas Instruments
MOSFET 2N-CH 30V 5A 6WSON
STS8DNF3LL
STS8DNF3LL
STMicroelectronics
MOSFET 2N-CH 30V 8A 8-SOIC
NX3008NBKSH
NX3008NBKSH
Nexperia USA Inc.
MOSFET 2 N-CH 30V 350MA 6TSSOP
CSD86350Q5DT
CSD86350Q5DT
Texas Instruments
25V POWERBLOCK N CH MOSFET
NTGD4167CT1G
NTGD4167CT1G
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
NX1029XH
NX1029XH
Nexperia USA Inc.
NX1029X/SOT666/SOT6
STS8C5H30L
STS8C5H30L
STMicroelectronics
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
FDPC4044
FDPC4044
onsemi
MOSFET 2N-CH 8MLP
FDG6303N_G
FDG6303N_G
onsemi
INTEGRATED CIRCUIT
FDMS3669S-SN00345
FDMS3669S-SN00345
onsemi
MOSFET 2N-CH 30V

Related Product By Brand

BAS70-05Q-7-F
BAS70-05Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
B340A-13-F
B340A-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 3A SMA
BAV21W-7-F
BAV21W-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BZX84C6V2-7-F
BZX84C6V2-7-F
Diodes Incorporated
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C33-7-F
BZX84C33-7-F
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C36W-7-F
BZX84C36W-7-F
Diodes Incorporated
DIODE ZENER 36V 200MW SOT323
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BSS84Q-7-F
BSS84Q-7-F
Diodes Incorporated
BSS FAMILY SOT23 T&R 3K
74LVC1G14Z-7
74LVC1G14Z-7
Diodes Incorporated
IC INVERT SCHMITT 1CH 1IN SOT553