2N7002DWQ-13-F
  • Share:

Diodes Incorporated 2N7002DWQ-13-F

Manufacturer No:
2N7002DWQ-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT363 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWQ-13-F is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and motor control applications. The MOSFET features a low on-state resistance (RDS(ON)) and low gate threshold voltage, which are crucial for minimizing power losses and enhancing overall system efficiency.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 60 V
On-Resistance (Max) RDS(ON) 7.5Ω @ VGS = 5V Ω
Continuous Drain Current (Max) ID 0.23 A @ TA = +25°C A
Gate-Source Voltage (Continuous) VGSS ±20 V V
Input Capacitance (Max) Ciss 50 pF @ VDS = 25V pF
Turn-On Delay Time tD(ON) 7.0 - 20 ns ns
Turn-Off Delay Time tD(OFF) 11.0 - 20 ns ns
Package SOT-363
Operating Temperature Range TJ -55 to +150 °C °C

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-363)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Applications

  • Motor Control
  • Power Management Functions
  • Automotive Applications (AEC-Q101 qualified)

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002DWQ-13-F MOSFET?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the on-state resistance (RDS(ON)) of the 2N7002DWQ-13-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  3. What is the continuous drain current (ID) of the 2N7002DWQ-13-F MOSFET at 25°C?

    The continuous drain current (ID) is 0.23 A at TA = +25°C.

  4. What is the input capacitance (Ciss) of the 2N7002DWQ-13-F MOSFET?

    The input capacitance (Ciss) is 50 pF at VDS = 25V.

  5. What is the turn-on delay time (tD(ON)) of the 2N7002DWQ-13-F MOSFET?

    The turn-on delay time (tD(ON)) is between 7.0 and 20 ns.

  6. What is the package type of the 2N7002DWQ-13-F MOSFET?

    The package type is SOT-363.

  7. Is the 2N7002DWQ-13-F MOSFET RoHS compliant?

    Yes, the 2N7002DWQ-13-F MOSFET is fully RoHS compliant and lead-free.

  8. What are the typical applications of the 2N7002DWQ-13-F MOSFET?

    The typical applications include motor control and power management functions, particularly in automotive systems.

  9. What is the operating temperature range of the 2N7002DWQ-13-F MOSFET?

    The operating temperature range is -55 to +150 °C.

  10. Is the 2N7002DWQ-13-F MOSFET qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.12
2,264

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP

Related Product By Categories

2N7002VA-7
2N7002VA-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
NTZD3152PT1G
NTZD3152PT1G
onsemi
MOSFET 2P-CH 20V 430MA SOT563
NTJD1155LT1G
NTJD1155LT1G
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
CSD87502Q2
CSD87502Q2
Texas Instruments
MOSFET 2N-CH 30V 5A 6WSON
2N7002VA
2N7002VA
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
STS10DN3LH5
STS10DN3LH5
STMicroelectronics
MOSFET 2N-CH 30V 10A 8-SOIC
NTLUD3A260PZTAG
NTLUD3A260PZTAG
onsemi
MOSFET 2P-CH 20V 1.3A 6UDFN
FDMQ8203
FDMQ8203
onsemi
MOSFET 2N/2P-CH 100V/80V 12-MLP
NTLJD4116NT1G
NTLJD4116NT1G
onsemi
MOSFET 2N-CH 30V 2.5A 6WDFN
BSS8402DWQ-13
BSS8402DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
MCH6661-TL-W
MCH6661-TL-W
onsemi
MOSFET 2N-CH 30V 1.8A SOT363

Related Product By Brand

BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BC857A-7-F
BC857A-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT23-3
BCP53TA
BCP53TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
BCP5616TTC
BCP5616TTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS138WQ-13-F
BSS138WQ-13-F
Diodes Incorporated
BSS FAMILY SOT323 T&R 10K
2N7002T-7
2N7002T-7
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-523
BSS123ATA
BSS123ATA
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
LM2903AQM8-13
LM2903AQM8-13
Diodes Incorporated
IC COMP DUAL DIFFERENTIAL 8MSOP
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26