Overview
The BC857SE6433HTMA1 is a dual PNP silicon AF transistor array produced by Infineon Technologies. This component is designed for use in audio frequency (AF) input stages and driver applications. It is known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.
However, it is important to note that the BC857SE6433HTMA1 is currently listed as obsolete and is no longer manufactured by Infineon Technologies. Users may need to consider substitute components such as the BC857SH6327XTSA1 for their applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCEO | 45 | V |
| Collector-base voltage | VCBO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Peak collector current (tp ≤ 10 ms) | ICM | 200 | mA |
| Total power dissipation (TS ≤ 115 °C) | Ptot | 250 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 to 150 | °C |
| DC current gain (hFE) | hFE | 200 to 630 | - |
| Collector-emitter saturation voltage | VCEsat | 75 to 250 | mV |
| Base-emitter saturation voltage | VBEsat | 700 to 850 | mV |
Key Features
- High current gain (hFE) ranging from 200 to 630, ensuring reliable amplification in AF circuits.
- Low collector-emitter saturation voltage (VCEsat) of 75 to 250 mV, which minimizes power loss and heat generation.
- High collector-emitter breakdown voltage (VCEO) of 45 V, providing robustness against voltage spikes.
- Low base-emitter saturation voltage (VBEsat) of 700 to 850 mV, facilitating efficient switching and amplification.
- Dual PNP configuration, allowing for versatile use in various circuit designs.
Applications
- Audio frequency (AF) input stages: Suitable for amplifying low-frequency signals in audio equipment.
- Driver applications: Can be used to drive loads such as speakers, LEDs, or other transistors.
- General-purpose amplification: Applicable in a wide range of electronic circuits requiring PNP transistor arrays.
- Automotive and industrial electronics: Due to its robust specifications, it can be used in various automotive and industrial applications.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC857SE6433HTMA1?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the maximum collector current (IC) of the BC857SE6433HTMA1?
The maximum collector current (IC) is 100 mA.
- What is the typical DC current gain (hFE) of the BC857SE6433HTMA1?
The typical DC current gain (hFE) ranges from 200 to 630.
- What is the collector-emitter saturation voltage (VCEsat) of the BC857SE6433HTMA1?
The collector-emitter saturation voltage (VCEsat) ranges from 75 to 250 mV.
- Is the BC857SE6433HTMA1 still in production?
No, the BC857SE6433HTMA1 is currently listed as obsolete and is no longer manufactured by Infineon Technologies.
- What are some potential substitute components for the BC857SE6433HTMA1?
One potential substitute is the BC857SH6327XTSA1.
- What is the junction temperature range for the BC857SE6433HTMA1?
The junction temperature range is up to 150 °C.
- What is the storage temperature range for the BC857SE6433HTMA1?
The storage temperature range is from -65 to 150 °C.
- What type of transistor array is the BC857SE6433HTMA1?
The BC857SE6433HTMA1 is a dual PNP silicon AF transistor array.
- What are some common applications for the BC857SE6433HTMA1?
Common applications include AF input stages, driver applications, and general-purpose amplification in electronic circuits.
