Overview
The BC847BSHE3-TP is a highly versatile and reliable NPN/NPN bipolar junction transistor array produced by Micro Commercial Co. This component is designed for general-purpose transistor applications and is packaged in a small SOT363 (SC-88) surface-mounted device (SMD) plastic package. It is known for its low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain, making it an excellent choice for various electronic projects.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 45 | V |
| Collector Current (IC) | - | - | - | 100 | mA |
| DC Current Gain (hFE) | VCE = 5 V; IC = 2 mA; T amb = 25 °C | 200 | - | 450 | - |
| Collector-Base Voltage (VCBO) | Open emitter | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | 6 | V |
| Collector-Emitter Saturation Voltage (VCEsat) | - | - | - | 650 | mV |
| Power Dissipation (Ptot) | Tamb ≤ 25 °C | - | - | 300 | mW |
| Gain Bandwidth Product (fT) | - | - | - | 200 | MHz |
| Minimum Operating Temperature | - | - | - | -55 | °C |
| Maximum Operating Temperature | - | - | - | 150 | °C |
Key Features
- Low collector capacitance
- Low collector-emitter saturation voltage
- Closely matched current gain
- Reduces the number of components and board space
- No mutual interference between the transistors
- Compact SOT363 (SC-88) surface-mounted package
Applications
The BC847BSHE3-TP is suitable for general-purpose switching and amplification applications. Its versatility and reliability make it an excellent choice for a wide range of electronic projects, including but not limited to:
- General-purpose switching circuits
- Amplifier circuits
- Automotive and industrial control systems
- Consumer electronics
Q & A
- What is the collector-emitter voltage rating of the BC847BSHE3-TP?
The collector-emitter voltage (VCEO) rating is up to 45 V. - What is the maximum collector current for the BC847BSHE3-TP?
The maximum collector current (IC) is 100 mA. - What is the typical DC current gain (hFE) of the BC847BSHE3-TP?
The typical DC current gain (hFE) is between 200 and 450. - What is the package type of the BC847BSHE3-TP?
The component is packaged in a SOT363 (SC-88) surface-mounted device (SMD) plastic package. - What are the operating temperature ranges for the BC847BSHE3-TP?
The minimum operating temperature is -55 °C, and the maximum operating temperature is 150 °C. - What is the power dissipation limit for the BC847BSHE3-TP?
The total power dissipation (Ptot) is up to 300 mW at an ambient temperature of 25 °C. - Is the BC847BSHE3-TP suitable for high-frequency applications?
Yes, it has a gain bandwidth product (fT) of 200 MHz, making it suitable for high-frequency applications. - What are the key features of the BC847BSHE3-TP?
Key features include low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. - How does the BC847BSHE3-TP reduce board space?
The component reduces board space by integrating two NPN transistors in a single package, minimizing the number of components needed. - What quality assurance measures are in place for the BC847BSHE3-TP?
The component undergoes rigorous incoming inspection, and the manufacturer adheres to strict testing protocols and industry standards such as ISO 9001:2015.
