Overview
The SS8050-D-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Components (MCC). This transistor is designed for various electronic applications, particularly where high current gain and moderate power handling are required. It is part of the SS8050 series, which includes several variants with different current gain classifications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 1.5 | A |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | TSTG | -65 to 150 | °C |
| Power Dissipation | PD | 1 | W |
| Thermal Resistance, Junction-to-Ambient | RJA | 125 | °C/W |
| DC Current Gain (VCE = 1 V, IC = 100 mA) | hFE2 | 85 - 300 | |
| Collector-Emitter Saturation Voltage (IC = 800 mA, IB = 80 mA) | VCE(sat) | 0.5 | V |
| Base-Emitter Saturation Voltage (IC = 800 mA, IB = 80 mA) | VBE(sat) | 1.2 | V |
Key Features
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
- High Current Gain: With a DC current gain (hFE) ranging from 85 to 300, depending on the classification.
- Moderate Power Handling: Capable of handling up to 1.5 A of collector current and 1 W of power dissipation.
- Complementary Transistor: Complementary to the SS8550 PNP transistor.
- Wide Operating Temperature Range: Suitable for use in a variety of environments with a junction temperature up to 150°C and storage temperature from -65°C to 150°C.
Applications
The SS8050-D-BP transistor is suitable for various applications, including:
- Output Amplifiers in Portable Radios: Particularly in Class B push-pull operations.
- General Purpose Amplification: In audio and other electronic circuits where moderate power and high current gain are necessary.
- Switching Circuits: Due to its moderate switching speeds and current handling capabilities.
Q & A
- What is the maximum collector-emitter voltage of the SS8050-D-BP transistor?
The maximum collector-emitter voltage (VCEO) is 25 V. - What is the maximum collector current of the SS8050-D-BP transistor?
The maximum collector current (IC) is 1.5 A. - Is the SS8050-D-BP transistor RoHS compliant?
Yes, the SS8050-D-BP transistor is Pb-Free, Halogen Free/BFR Free and RoHS compliant. - What is the typical DC current gain (hFE) of the SS8050-D-BP transistor?
The typical DC current gain (hFE) ranges from 85 to 300, depending on the classification. - What is the thermal resistance, junction-to-ambient (RJA) of the SS8050-D-BP transistor?
The thermal resistance, junction-to-ambient (RJA) is 125 °C/W. - What are the storage temperature limits for the SS8050-D-BP transistor?
The storage temperature limits are from -65°C to 150°C. - Is the SS8050-D-BP transistor suitable for high-power applications?
No, it is more suited for moderate power handling with a maximum power dissipation of 1 W. - What is the collector-emitter saturation voltage of the SS8050-D-BP transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 V at IC = 800 mA and IB = 80 mA. - What is the base-emitter saturation voltage of the SS8050-D-BP transistor?
The base-emitter saturation voltage (VBE(sat)) is 1.2 V at IC = 800 mA and IB = 80 mA. - What is the complementary transistor to the SS8050-D-BP?
The complementary transistor to the SS8050-D-BP is the SS8550 PNP transistor.
