BCM856BSH-QF
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Nexperia USA Inc. BCM856BSH-QF

Manufacturer No:
BCM856BSH-QF
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BCM856BSH-QF
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BCM856BSH-QF is a bipolar junction transistor (BJT) array produced by Nexperia USA Inc. This component features a dual PNP configuration, making it suitable for a variety of applications requiring matched transistor pairs. The device is packaged in a compact 6-TSSOP (Thin Shrink Small Outline Package) surface-mount format, enhancing its usability in space-constrained designs.

Key Specifications

ParameterValue
Transistor TypePNP/PNP matched double transistor
Maximum DC Collector Current100 mA
Collector-Emitter Voltage (VCEO) Max80 V
Collector-Base Voltage (VCBO)65 V
Emitter-Base Voltage (VEBO)5 V
Frequency (fT)175 MHz
Power Dissipation (Ptot)200 mW
Package Type6-TSSOP (Surface Mount)

Key Features

  • Matched Transistor Pairs: The BCM856BSH-QF features matched PNP transistors, ensuring consistent performance and reducing component variability.
  • Compact Packaging: The 6-TSSOP package is ideal for applications where space is limited.
  • High Frequency Capability: With a frequency of 175 MHz, this transistor array is suitable for high-frequency applications.
  • Low Power Consumption: The device has a power dissipation of 200 mW, making it energy-efficient.

Applications

The BCM856BSH-QF is versatile and can be used in various electronic circuits, including:

  • Audio Amplifiers: Due to its matched transistor pairs, it is suitable for audio amplifier circuits where balanced performance is crucial.
  • Switching Circuits: Its high frequency capability makes it suitable for switching applications.
  • General Purpose Amplification: It can be used in a wide range of general-purpose amplification circuits.
  • Automotive and Industrial Electronics: The device's robust specifications make it suitable for use in automotive and industrial electronics.

Q & A

  1. What is the BCM856BSH-QF?

    The BCM856BSH-QF is a bipolar junction transistor (BJT) array with a dual PNP configuration produced by Nexperia USA Inc.

  2. What is the maximum DC collector current of the BCM856BSH-QF?

    The maximum DC collector current is 100 mA.

  3. What is the collector-emitter voltage (VCEO) of the BCM856BSH-QF?

    The collector-emitter voltage (VCEO) is 80 V.

  4. What is the package type of the BCM856BSH-QF?

    The package type is 6-TSSOP (Thin Shrink Small Outline Package).

  5. What is the frequency capability of the BCM856BSH-QF?

    The frequency capability is 175 MHz.

  6. What are the typical applications of the BCM856BSH-QF?

    Typical applications include audio amplifiers, switching circuits, general-purpose amplification, and automotive and industrial electronics.

  7. Why is the BCM856BSH-QF suitable for high-frequency applications?

    It is suitable due to its high frequency capability of 175 MHz.

  8. What is the power dissipation of the BCM856BSH-QF?

    The power dissipation is 200 mW.

  9. Is the BCM856BSH-QF available in other package types?

    No, the BCM856BSH-QF is specifically available in the 6-TSSOP package.

  10. What is the NPN/NPN complement of the BCM856BSH-QF?

    The NPN/NPN complement is the BCM846BSH.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200mW
Frequency - Transition:175MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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