Overview
The BC817UPNE6327HTSA1 is a dual NPN/PNP transistor array produced by Infineon Technologies. This component is designed for a variety of applications, including audio frequency (AF) stages and driver applications. It features high current gain and low collector-emitter saturation voltage, making it suitable for high-performance requirements. The device is packaged in a SC-74 (SOT-457) package, which is Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 45 | V |
Collector-Base Voltage | VCBO | 50 | V |
Emitter-Base Voltage | VEBO | 5.0 | V |
Collector Current (Continuous) | IC | 500 | mA |
Peak Collector Current (tp ≤ 10 ms) | ICM | 1000 | mA |
Base Current | IB | 100 | mA |
Peak Base Current | IBM | 200 | mA |
Total Power Dissipation (TS ≤ 115 °C) | Ptot | 330 | mW |
Junction Temperature | Tj | 150 | °C |
Storage Temperature | Tstg | -65 to 150 | °C |
Current Gain (hFE) | hFE | 100 to 250 | |
Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 to 0.8 | V |
Key Features
- High current gain (hFE: 100 to 250)
- Low collector-emitter saturation voltage (VCE(sat): 0.4 to 0.8 V)
- Dual NPN/PNP transistors in one package
- Pb-free and RoHS compliant package
- AEC-Q101 qualified for automotive applications
- High reliability and performance in AF stages and driver applications
Applications
- Audio Frequency (AF) stages
- Driver applications
- Automotive electronics
- General-purpose switching and amplification
- Consumer electronics requiring high reliability and performance
Q & A
- What is the collector-emitter voltage rating of the BC817UPNE6327HTSA1?
The collector-emitter voltage rating is 45 V.
- What is the maximum collector current for this transistor?
The maximum continuous collector current is 500 mA, and the peak collector current is 1000 mA for tp ≤ 10 ms.
- Is the BC817UPNE6327HTSA1 RoHS compliant?
- What is the junction temperature range for this transistor?
The junction temperature range is -65 to 150 °C.
- What are the typical applications of the BC817UPNE6327HTSA1?
Typical applications include AF stages, driver applications, and automotive electronics.
- What is the current gain (hFE) of the BC817UPNE6327HTSA1?
The current gain (hFE) ranges from 100 to 250.
- Is the BC817UPNE6327HTSA1 qualified for automotive use?
- What is the collector-emitter saturation voltage of the BC817UPNE6327HTSA1?
The collector-emitter saturation voltage (VCE(sat)) is between 0.4 to 0.8 V.
- What is the package type of the BC817UPNE6327HTSA1?
The package type is SC-74 (SOT-457).
- What is the total power dissipation of the BC817UPNE6327HTSA1?
The total power dissipation (Ptot) is 330 mW at TS ≤ 115 °C.