Overview
The BC860CWE6327HTSA1 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for use in various audio frequency (AF) applications, including input stages and driver circuits. It is known for its high current gain and low collector-emitter saturation voltage, making it suitable for a range of electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V |
| Collector Current | IC | 100 | mA |
| Peak Collector Current (tp ≤ 10 ms) | ICM | 200 | mA |
| Total Power Dissipation (TS ≤ 71 °C) | Ptot | 250 | mW |
| Junction Temperature | Tj | -65 to 150 | °C |
| DC Current Gain (hFE) @ IC = 2 mA, VCE = 5 V | hFE | 220 | |
| Transition Frequency | fT | 100 | MHz |
| Package / Case | SOT-323 |
Key Features
- High current gain, making it suitable for amplification and switching applications.
- Low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
- High transition frequency of 100 MHz, enabling its use in high-frequency applications.
- Compact SOT-323 package, ideal for surface mount technology (SMT) and space-constrained designs.
- Wide operating temperature range from -65 °C to 150 °C, ensuring reliability in various environmental conditions.
Applications
- AUDIO FREQUENCY (AF) INPUT STAGES: Suitable for use in audio amplifiers and other AF circuits due to its high current gain and low noise characteristics.
- DRIVER APPLICATIONS: Can be used as a driver transistor in various electronic circuits requiring high current gain and low saturation voltage.
- SWITCHING CIRCUITS: Its high transition frequency and low saturation voltage make it suitable for switching applications.
- GENERAL PURPOSE AMPLIFICATION: Can be used in general-purpose amplification circuits where high current gain and reliability are required.
Q & A
- What is the maximum collector current of the BC860CWE6327HTSA1 transistor?
The maximum collector current (IC) is 100 mA, with a peak collector current (ICM) of 200 mA for pulses up to 10 ms.
- What is the collector-base breakdown voltage of this transistor?
The collector-base breakdown voltage (V(BR)CBO) is 50 V.
- What is the transition frequency of the BC860CWE6327HTSA1?
The transition frequency (fT) is 100 MHz.
- What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) at IC = 2 mA and VCE = 5 V is 220.
- What is the maximum total power dissipation of the BC860CWE6327HTSA1?
The maximum total power dissipation (Ptot) is 250 mW at a temperature of up to 71 °C.
- What is the operating temperature range of this transistor?
The operating junction temperature range is from -65 °C to 150 °C.
- What package type is the BC860CWE6327HTSA1 available in?
The transistor is available in the SOT-323 package.
- Is the BC860CWE6327HTSA1 suitable for high-frequency applications?
- Is the BC860CWE6327HTSA1 still in production?
No, the BC860CWE6327HTSA1 is obsolete and no longer manufactured.
- What are some common applications of the BC860CWE6327HTSA1 transistor?
