PD55008TR-E
  • Share:

STMicroelectronics PD55008TR-E

Manufacturer No:
PD55008TR-E
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANSISTOR RF POWERSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55008TR-E is a high-performance RF power transistor produced by STMicroelectronics. It is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) designed for high gain and broad band commercial and industrial applications. This device operates at 12 V in common source mode at frequencies up to 1 GHz, making it ideal for applications requiring high linearity and reliability. The PD55008TR-E is packaged in the PowerSO-10RF, a JEDEC-approved high power SMD package optimized for RF performance and ease of assembly.

Key Specifications

Parameter Value Unit
Drain-source voltage (V(BR)DSS) 40 V
Gate-source voltage (VGS) ± 20 V
Drain current (ID) 4 A
Power dissipation (PDISS) @ TC = 70°C 52.8 W
Max. operating junction temperature (TJ) 165 °C
Storage temperature (TSTG) -65 to +150 °C
Junction - case thermal resistance (RthJC) 1.8 °C/W
Output power (POUT) @ VDD = 12.5 V, IDQ = 150 mA, f = 500 MHz 8 W
Power gain (GP) @ VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHz 15 - 17 dB
Drain efficiency (nD) @ VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHz 50 - 55 %

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High gain and broad band performance up to 1 GHz
  • Superior linearity performance, ideal for car mobile radio applications
  • PowerSO-10RF package, the first true SMD plastic RF power package, offering high reliability and ease of assembly
  • JEDEC-approved high power SMD package optimized for RF needs

Applications

  • Commercial and industrial RF applications
  • Car mobile radio systems
  • Broadband amplifiers
  • High-power RF amplifiers
  • Wireless communication systems

Q & A

  1. What is the PD55008TR-E?

    The PD55008TR-E is a high-performance RF power transistor produced by STMicroelectronics, designed for high gain and broad band commercial and industrial applications.

  2. What is the operating voltage of the PD55008TR-E?

    The device operates at 12 V in common source mode.

  3. What is the maximum operating frequency of the PD55008TR-E?

    The device operates at frequencies up to 1 GHz.

  4. What is the output power of the PD55008TR-E at 500 MHz?

    The output power is 8 W at VDD = 12.5 V, IDQ = 150 mA, and f = 500 MHz.

  5. What is the power gain of the PD55008TR-E at 500 MHz?

    The power gain is 15 - 17 dB at VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, and f = 500 MHz.

  6. What is the package type of the PD55008TR-E?

    The device is packaged in the PowerSO-10RF, a JEDEC-approved high power SMD package.

  7. What are the key features of the PowerSO-10RF package?

    The PowerSO-10RF package offers high reliability, ease of assembly, and is optimized for RF performance.

  8. What are the typical applications of the PD55008TR-E?

    Typical applications include commercial and industrial RF applications, car mobile radio systems, broadband amplifiers, high-power RF amplifiers, and wireless communication systems.

  9. What is the maximum junction temperature of the PD55008TR-E?

    The maximum operating junction temperature is 165°C.

  10. What is the storage temperature range for the PD55008TR-E?

    The storage temperature range is -65 to +150°C.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:17dB
Voltage - Test:12.5 V
Current Rating (Amps):4A
Noise Figure:- 
Current - Test:150 mA
Power - Output:8W
Voltage - Rated:40 V
Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:PowerSO-10RF (Formed Lead)
0 Remaining View Similar

In Stock

$14.60
43

Please send RFQ , we will respond immediately.

Same Series
PD55008TR-E
PD55008TR-E
TRANSISTOR RF POWERSO-10
PD55008S-E
PD55008S-E
FET RF 40V 500MHZ PWRSO10
PD55008STR-E
PD55008STR-E
FET RF 40V 500MHZ PWRSO-10

Similar Products

Part Number PD55008TR-E PD54008TR-E PD55003TR-E PD55008STR-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS
Frequency 500MHz 500MHz 500MHz 500MHz
Gain 17dB 11.5dB 17dB 17dB
Voltage - Test 12.5 V 7.5 V 12.5 V 12.5 V
Current Rating (Amps) 4A 5A 2.5A 4A
Noise Figure - - - -
Current - Test 150 mA 150 mA 50 mA 150 mA
Power - Output 8W 8W 3W 8W
Voltage - Rated 40 V 25 V 40 V 40 V
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerSO-10RF (Formed Lead) PowerSO-10RF (Formed Lead) 10-PowerSO PowerSO-10RF (Straight Lead)

Related Product By Categories

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
AFT09MS015NT1
AFT09MS015NT1
NXP USA Inc.
RF MOSFET LDMOS 12.5V PLD1.5W
SD2943W
SD2943W
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M177
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN