PD55008TR-E
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STMicroelectronics PD55008TR-E

Manufacturer No:
PD55008TR-E
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANSISTOR RF POWERSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55008TR-E is a high-performance RF power transistor produced by STMicroelectronics. It is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) designed for high gain and broad band commercial and industrial applications. This device operates at 12 V in common source mode at frequencies up to 1 GHz, making it ideal for applications requiring high linearity and reliability. The PD55008TR-E is packaged in the PowerSO-10RF, a JEDEC-approved high power SMD package optimized for RF performance and ease of assembly.

Key Specifications

Parameter Value Unit
Drain-source voltage (V(BR)DSS) 40 V
Gate-source voltage (VGS) ± 20 V
Drain current (ID) 4 A
Power dissipation (PDISS) @ TC = 70°C 52.8 W
Max. operating junction temperature (TJ) 165 °C
Storage temperature (TSTG) -65 to +150 °C
Junction - case thermal resistance (RthJC) 1.8 °C/W
Output power (POUT) @ VDD = 12.5 V, IDQ = 150 mA, f = 500 MHz 8 W
Power gain (GP) @ VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHz 15 - 17 dB
Drain efficiency (nD) @ VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHz 50 - 55 %

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High gain and broad band performance up to 1 GHz
  • Superior linearity performance, ideal for car mobile radio applications
  • PowerSO-10RF package, the first true SMD plastic RF power package, offering high reliability and ease of assembly
  • JEDEC-approved high power SMD package optimized for RF needs

Applications

  • Commercial and industrial RF applications
  • Car mobile radio systems
  • Broadband amplifiers
  • High-power RF amplifiers
  • Wireless communication systems

Q & A

  1. What is the PD55008TR-E?

    The PD55008TR-E is a high-performance RF power transistor produced by STMicroelectronics, designed for high gain and broad band commercial and industrial applications.

  2. What is the operating voltage of the PD55008TR-E?

    The device operates at 12 V in common source mode.

  3. What is the maximum operating frequency of the PD55008TR-E?

    The device operates at frequencies up to 1 GHz.

  4. What is the output power of the PD55008TR-E at 500 MHz?

    The output power is 8 W at VDD = 12.5 V, IDQ = 150 mA, and f = 500 MHz.

  5. What is the power gain of the PD55008TR-E at 500 MHz?

    The power gain is 15 - 17 dB at VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, and f = 500 MHz.

  6. What is the package type of the PD55008TR-E?

    The device is packaged in the PowerSO-10RF, a JEDEC-approved high power SMD package.

  7. What are the key features of the PowerSO-10RF package?

    The PowerSO-10RF package offers high reliability, ease of assembly, and is optimized for RF performance.

  8. What are the typical applications of the PD55008TR-E?

    Typical applications include commercial and industrial RF applications, car mobile radio systems, broadband amplifiers, high-power RF amplifiers, and wireless communication systems.

  9. What is the maximum junction temperature of the PD55008TR-E?

    The maximum operating junction temperature is 165°C.

  10. What is the storage temperature range for the PD55008TR-E?

    The storage temperature range is -65 to +150°C.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:17dB
Voltage - Test:12.5 V
Current Rating (Amps):4A
Noise Figure:- 
Current - Test:150 mA
Power - Output:8W
Voltage - Rated:40 V
Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:PowerSO-10RF (Formed Lead)
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$14.60
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Same Series
PD55008TR-E
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TRANSISTOR RF POWERSO-10
PD55008S-E
PD55008S-E
FET RF 40V 500MHZ PWRSO10
PD55008STR-E
PD55008STR-E
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Similar Products

Part Number PD55008TR-E PD54008TR-E PD55003TR-E PD55008STR-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS
Frequency 500MHz 500MHz 500MHz 500MHz
Gain 17dB 11.5dB 17dB 17dB
Voltage - Test 12.5 V 7.5 V 12.5 V 12.5 V
Current Rating (Amps) 4A 5A 2.5A 4A
Noise Figure - - - -
Current - Test 150 mA 150 mA 50 mA 150 mA
Power - Output 8W 8W 3W 8W
Voltage - Rated 40 V 25 V 40 V 40 V
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerSO-10RF (Formed Lead) PowerSO-10RF (Formed Lead) 10-PowerSO PowerSO-10RF (Straight Lead)

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