SD2933W
  • Share:

STMicroelectronics SD2933W

Manufacturer No:
SD2933W
Manufacturer:
STMicroelectronics
Package:
Tray
Description:
IC TRANS RF HF/VHF/UHF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SD2933W is a gold metalized N-channel MOS field-effect RF power transistor manufactured by STMicroelectronics. It is designed for use in 50 V dc large signal applications up to 150 MHz. This transistor is particularly suited for Industrial, Scientific, and Medical (ISM) applications where reliability and ruggedness are critical. The SD2933W features a special low thermal resistance package, which enhances its thermal stability and makes it ideal for high-power RF applications.

Key Specifications

Parameter Value Unit
Part Number SD2933W
Manufacturer STMicroelectronics
Package M177 (Epoxy sealed)
Maximum Drain-Source Voltage (Vds) 125 V
Maximum Gate-Source Voltage (Vgs) ±20 V
Maximum Drain Current (Id) 40 A
Maximum Power Dissipation (Pd) 648 W
Maximum Junction Temperature (Tj) 200 °C
Output Capacitance (Coss) 372 pF
Drain-Source On-State Resistance (Rds) 1 Ω
Operating Frequency Up to 150 MHz
Output Power (Pout) @ 30 MHz 300 W min. with 20 dB gain
Operating Temperature Range -65 to +150 °C

Key Features

  • Gold metalization for improved reliability and performance.
  • Excellent thermal stability due to thermally enhanced packaging.
  • Common source configuration.
  • High output power: 300 W min. with 20 dB gain @ 30 MHz.
  • Low thermal resistance package for lower junction temperatures.

Applications

The SD2933W is ideal for various high-power RF applications, including:

  • Industrial, Scientific, and Medical (ISM) equipment.
  • HF, VHF, and UHF radio frequency amplifiers.
  • High-power RF transmitters and amplifiers.
  • Applications requiring high reliability and ruggedness.

Q & A

  1. What is the maximum drain-source voltage of the SD2933W?

    The maximum drain-source voltage (Vds) is 125 V.

  2. What is the maximum gate-source voltage of the SD2933W?

    The maximum gate-source voltage (Vgs) is ±20 V.

  3. What is the maximum drain current of the SD2933W?

    The maximum drain current (Id) is 40 A.

  4. What is the maximum power dissipation of the SD2933W?

    The maximum power dissipation (Pd) is 648 W.

  5. What is the operating frequency range of the SD2933W?

    The SD2933W operates up to 150 MHz.

  6. What is the output power of the SD2933W at 30 MHz?

    The output power (Pout) is 300 W min. with 20 dB gain @ 30 MHz.

  7. What type of packaging does the SD2933W use?

    The SD2933W uses an M177 epoxy sealed package.

  8. What are the key features of the SD2933W?

    The key features include gold metalization, excellent thermal stability, common source configuration, and thermally enhanced packaging.

  9. What are some typical applications for the SD2933W?

    Typical applications include ISM equipment, HF, VHF, and UHF radio frequency amplifiers, and high-power RF transmitters and amplifiers.

  10. What is the maximum junction temperature of the SD2933W?

    The maximum junction temperature (Tj) is 200 °C.

  11. What is the storage temperature range for the SD2933W?

    The storage temperature range is -65 to +150 °C.

Product Attributes

Transistor Type:N-Channel
Frequency:30MHz
Gain:23.5dB
Voltage - Test:50 V
Current Rating (Amps):40A
Noise Figure:- 
Current - Test:250 mA
Power - Output:300W
Voltage - Rated:125 V
Package / Case:M177
Supplier Device Package:M177
0 Remaining View Similar

In Stock

$141.65
6

Please send RFQ , we will respond immediately.

Same Series
SD2933
SD2933
TRANS RF N-CH HF/VHF/UHF M177

Similar Products

Part Number SD2933W SD2943W SD2932W SD2933
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
Transistor Type N-Channel N-Channel N-Channel N-Channel
Frequency 30MHz 30MHz 175MHz 30MHz
Gain 23.5dB 25dB 16dB 23.5dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) 40A 40A 40A 40A
Noise Figure - - - -
Current - Test 250 mA 250 mA 500 mA 250 mA
Power - Output 300W 350W 300W 300W
Voltage - Rated 125 V 130 V 125 V 125 V
Package / Case M177 M177 M244 M177
Supplier Device Package M177 M177 M244 M177

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
MMBFJ310LT1G
MMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BF510,215
BF510,215
NXP USA Inc.
RF MOSFET N-CH JFET 10V TO236AB
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO