SD2933W
  • Share:

STMicroelectronics SD2933W

Manufacturer No:
SD2933W
Manufacturer:
STMicroelectronics
Package:
Tray
Description:
IC TRANS RF HF/VHF/UHF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SD2933W is a gold metalized N-channel MOS field-effect RF power transistor manufactured by STMicroelectronics. It is designed for use in 50 V dc large signal applications up to 150 MHz. This transistor is particularly suited for Industrial, Scientific, and Medical (ISM) applications where reliability and ruggedness are critical. The SD2933W features a special low thermal resistance package, which enhances its thermal stability and makes it ideal for high-power RF applications.

Key Specifications

Parameter Value Unit
Part Number SD2933W
Manufacturer STMicroelectronics
Package M177 (Epoxy sealed)
Maximum Drain-Source Voltage (Vds) 125 V
Maximum Gate-Source Voltage (Vgs) ±20 V
Maximum Drain Current (Id) 40 A
Maximum Power Dissipation (Pd) 648 W
Maximum Junction Temperature (Tj) 200 °C
Output Capacitance (Coss) 372 pF
Drain-Source On-State Resistance (Rds) 1 Ω
Operating Frequency Up to 150 MHz
Output Power (Pout) @ 30 MHz 300 W min. with 20 dB gain
Operating Temperature Range -65 to +150 °C

Key Features

  • Gold metalization for improved reliability and performance.
  • Excellent thermal stability due to thermally enhanced packaging.
  • Common source configuration.
  • High output power: 300 W min. with 20 dB gain @ 30 MHz.
  • Low thermal resistance package for lower junction temperatures.

Applications

The SD2933W is ideal for various high-power RF applications, including:

  • Industrial, Scientific, and Medical (ISM) equipment.
  • HF, VHF, and UHF radio frequency amplifiers.
  • High-power RF transmitters and amplifiers.
  • Applications requiring high reliability and ruggedness.

Q & A

  1. What is the maximum drain-source voltage of the SD2933W?

    The maximum drain-source voltage (Vds) is 125 V.

  2. What is the maximum gate-source voltage of the SD2933W?

    The maximum gate-source voltage (Vgs) is ±20 V.

  3. What is the maximum drain current of the SD2933W?

    The maximum drain current (Id) is 40 A.

  4. What is the maximum power dissipation of the SD2933W?

    The maximum power dissipation (Pd) is 648 W.

  5. What is the operating frequency range of the SD2933W?

    The SD2933W operates up to 150 MHz.

  6. What is the output power of the SD2933W at 30 MHz?

    The output power (Pout) is 300 W min. with 20 dB gain @ 30 MHz.

  7. What type of packaging does the SD2933W use?

    The SD2933W uses an M177 epoxy sealed package.

  8. What are the key features of the SD2933W?

    The key features include gold metalization, excellent thermal stability, common source configuration, and thermally enhanced packaging.

  9. What are some typical applications for the SD2933W?

    Typical applications include ISM equipment, HF, VHF, and UHF radio frequency amplifiers, and high-power RF transmitters and amplifiers.

  10. What is the maximum junction temperature of the SD2933W?

    The maximum junction temperature (Tj) is 200 °C.

  11. What is the storage temperature range for the SD2933W?

    The storage temperature range is -65 to +150 °C.

Product Attributes

Transistor Type:N-Channel
Frequency:30MHz
Gain:23.5dB
Voltage - Test:50 V
Current Rating (Amps):40A
Noise Figure:- 
Current - Test:250 mA
Power - Output:300W
Voltage - Rated:125 V
Package / Case:M177
Supplier Device Package:M177
0 Remaining View Similar

In Stock

$141.65
6

Please send RFQ , we will respond immediately.

Same Series
SD2933
SD2933
TRANS RF N-CH HF/VHF/UHF M177

Similar Products

Part Number SD2933W SD2943W SD2932W SD2933
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
Transistor Type N-Channel N-Channel N-Channel N-Channel
Frequency 30MHz 30MHz 175MHz 30MHz
Gain 23.5dB 25dB 16dB 23.5dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) 40A 40A 40A 40A
Noise Figure - - - -
Current - Test 250 mA 250 mA 500 mA 250 mA
Power - Output 300W 350W 300W 300W
Voltage - Rated 125 V 130 V 125 V 125 V
Package / Case M177 M177 M244 M177
Supplier Device Package M177 M177 M244 M177

Related Product By Categories

BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
A2I20H060NR1
A2I20H060NR1
NXP USA Inc.
IC TRANS RF LDMOS
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BF909R,215
BF909R,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BF998WR,115
BF998WR,115
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT343R
SD2933
SD2933
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M177
MMBFJ309
MMBFJ309
onsemi
RF MOSFET N-CH JFET 10V SOT23-3
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP