Overview
The BFG540W/XR,135 is an NPN 9 GHz wideband transistor produced by NXP USA Inc. This transistor is designed for high-frequency applications and is characterized by its high power gain, low noise figure, and high transition frequency. It is available in SOT343N and SOT343R plastic packages, which are surface-mounted and feature a 4-pin dual-emitter configuration.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 20 | V |
| VCES (Collector-Emitter Voltage) | RBE = 0 | - | - | 15 | V |
| IC (Collector Current) | - | - | - | 120 | mA |
| Ptot (Total Power Dissipation) | Ts ≤ 85°C | - | - | 500 | mW |
| hFE (DC Current Gain) | IC = 40 mA; VCE = 8 V | 180 | - | - | - |
Key Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization for excellent reliability
- Available in SOT343N and SOT343R plastic packages
Applications
The BFG540W/XR,135 is suitable for various RF front-end wideband applications in the GHz range, including:
- Analog and digital cellular telephones
- Cordless telephones (CT2, CT3, PCN, DECT, etc.)
- Radar detectors
- Pagers
- Satellite television tuners (SATV)
- MATV/CATV amplifiers and repeater amplifiers in fiber-optic systems
Q & A
- What is the maximum collector-base voltage (VCBO) for the BFG540W/XR,135?
The maximum collector-base voltage (VCBO) is 20 V.
- What is the typical DC current gain (hFE) of the BFG540W/XR,135?
The typical DC current gain (hFE) is 180 at IC = 40 mA and VCE = 8 V.
- In what packages is the BFG540W/XR,135 available?
The transistor is available in SOT343N and SOT343R plastic packages.
- What are some of the key features of the BFG540W/XR,135?
Key features include high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability.
- What are some common applications for the BFG540W/XR,135?
Common applications include RF front-end wideband applications such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
- What is the maximum collector-emitter voltage (VCES) for the BFG540W/XR,135?
The maximum collector-emitter voltage (VCES) is 15 V.
- What is the maximum total power dissipation (Ptot) for the BFG540W/XR,135 at Ts ≤ 85°C?
The maximum total power dissipation (Ptot) is 500 mW at Ts ≤ 85°C.
- What is the maximum collector current (IC) for the BFG540W/XR,135?
The maximum collector current (IC) is 120 mA.
- Why is gold metallization important in the BFG540W/XR,135?
Gold metallization ensures excellent reliability.
- Where can I find detailed specifications for the BFG540W/XR,135?
Detailed specifications can be found in the datasheet available on NXP Semiconductors' official website and other authorized distributors like Mouser Electronics and LCSC MALL CO., LIMITED.
