Overview
The S29GL128P90TFIR10 is a 128 Megabit, 3.0-volt-only, page mode Flash memory device manufactured by Infineon Technologies. This device is part of the S29GL-P family, which is optimized for today’s embedded designs requiring large storage arrays and rich functionality. It is fabricated using 90 nm MirrorBit process technology, offering high performance, low power consumption, and advanced features for secure and efficient data storage.
Key Specifications
| Parameter | Value |
|---|---|
| Memory Size | 128 Megabits (16 Mbytes) |
| Voltage Range | 2.7V to 3.6V |
| Process Technology | 90 nm MirrorBit |
| Page Access Time | 25 ns |
| Random Access Time | 90 ns |
| Write Buffer | 32 words / 64 bytes |
| Sector Architecture | Uniform 64 Kword (128 Kbyte) sectors; 128 sectors |
| Erase Cycles per Sector | 100,000 typical |
| Data Retention | 20 years typical |
| Package Options | 56-pin TSOP, 64-ball Fortified BGA |
Key Features
- VersatileI/O Control: Input and output levels determined by voltage on VIO input, ranging from 1.65V to VCC.
- Secured Silicon Sector: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number.
- Write Buffer: Allows programming of up to 32 words/64 bytes in one operation, reducing overall programming time.
- Suspend and Resume Commands: For program and erase operations, enhancing flexibility and efficiency.
- Advanced Sector Protection: Persistent and password methods for secure data protection.
- CFI (Common Flash Interface) Support: Facilitates easy integration and compatibility with various systems.
Applications
The S29GL128P90TFIR10 is ideal for a variety of embedded applications that require high-density storage, fast access times, and low power consumption. These include but are not limited to:
- Industrial control systems
- Automotive electronics
- Consumer electronics
- Networking and telecommunications equipment
- Medical devices
Q & A
- What is the memory size of the S29GL128P90TFIR10?
The S29GL128P90TFIR10 has a memory size of 128 Megabits (16 Mbytes). - What is the voltage range for the S29GL128P90TFIR10?
The voltage range is 2.7V to 3.6V. - What process technology is used in the S29GL128P90TFIR10?
The device is fabricated using 90 nm MirrorBit process technology. - What is the page access time of the S29GL128P90TFIR10?
The page access time is 25 ns. - How many sectors does the S29GL128P90TFIR10 have?
The device has 128 uniform 64 Kword (128 Kbyte) sectors. - What is the typical number of erase cycles per sector?
The typical number of erase cycles per sector is 100,000. - What is the data retention period for the S29GL128P90TFIR10?
The data retention period is typically 20 years. - What package options are available for the S29GL128P90TFIR10?
The device is available in 56-pin TSOP and 64-ball Fortified BGA packages. - Does the S29GL128P90TFIR10 support CFI (Common Flash Interface)?
Yes, the device supports CFI (Common Flash Interface). - What security features does the S29GL128P90TFIR10 offer?
The device offers persistent and password methods of Advanced Sector Protection, as well as a Secured Silicon Sector for secure identification.
