BAW56SH6327XTSA1
  • Share:

Infineon Technologies BAW56SH6327XTSA1

Manufacturer No:
BAW56SH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56SH6327XTSA1 is a high-performance switching diode produced by Infineon Technologies. This component is designed for high-speed switching applications and features a common anode configuration. It is part of the BAW56 series, known for its reliability and compliance with automotive standards such as AEC-Q101. The diode is packaged in a SOT-363 package, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

Parameter Value Unit
Manufacturer Infineon Technologies
Package SOT-363
Diode Configuration 2 Pair Common Anode
Reverse Voltage (Vr) 80 V V
Peak Reverse Voltage (VRM) 85 V V
Forward Current (IF) 200 mA mA
Non-repetitive Peak Surge Forward Current (IFSM) 4.5 A (t = 1 µs) A
Forward Voltage (Vf@If) 1.25 V @ 150 mA V
Reverse Recovery Time (trr) 4 ns ns
Junction Temperature (Tj) -65 to 150 °C °C
Storage Temperature (Tstg) -65 to 150 °C °C
Total Power Dissipation (Ptot) 250 mW mW
RoHS Compliance Yes

Key Features

  • High-speed switching capabilities, making it suitable for applications requiring fast switching times.
  • Common anode configuration with two pairs of diodes.
  • Pb-free (RoHS compliant) package, ensuring environmental sustainability.
  • Qualified according to AEC-Q101 standards, making it reliable for automotive applications.
  • Low forward voltage drop of 1.25 V at 150 mA.
  • Fast reverse recovery time of 4 ns.
  • High junction temperature range of -65 to 150 °C.

Applications

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications requiring high reliability.
  • High-speed switching circuits: Ideal for applications that require fast switching times and low forward voltage drop.
  • Surface mount technology (SMT): The SOT-363 package makes it easy to integrate into SMT assembly lines.
  • General purpose switching: Can be used in a variety of general-purpose switching applications where high speed and reliability are crucial.

Q & A

  1. What is the package type of the BAW56SH6327XTSA1?

    The BAW56SH6327XTSA1 is packaged in a SOT-363 package.

  2. What is the reverse voltage rating of the BAW56SH6327XTSA1?

    The reverse voltage rating is 80 V, with a peak reverse voltage of 85 V.

  3. What is the forward current rating of the BAW56SH6327XTSA1?

    The forward current rating is 200 mA.

  4. What is the forward voltage drop at 150 mA for the BAW56SH6327XTSA1?

    The forward voltage drop at 150 mA is 1.25 V.

  5. What is the reverse recovery time of the BAW56SH6327XTSA1?

    The reverse recovery time is 4 ns.

  6. Is the BAW56SH6327XTSA1 RoHS compliant?

    Yes, the BAW56SH6327XTSA1 is RoHS compliant.

  7. What are the typical applications for the BAW56SH6327XTSA1?

    Typical applications include automotive systems, high-speed switching circuits, and general-purpose switching.

  8. What is the junction temperature range for the BAW56SH6327XTSA1?

    The junction temperature range is -65 to 150 °C.

  9. What is the total power dissipation rating for the BAW56SH6327XTSA1?

    The total power dissipation rating is 250 mW.

  10. Is the BAW56SH6327XTSA1 qualified according to any automotive standards?

    Yes, it is qualified according to AEC-Q101 standards.

Product Attributes

Diode Configuration:2 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO
0 Remaining View Similar

In Stock

$0.05
8,229

Please send RFQ , we will respond immediately.

Same Series
BAW56SH6327XTSA1
BAW56SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW56UE6327HTSA1
BAW56UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56UE6433HTMA1
BAW56UE6433HTMA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56E6327
BAW56E6327
DIODE ARRAY GP 80V 200MA SOT23
BAW 56 E6433
BAW 56 E6433
DIODE ARRAY GP 80V 200MA SOT23
BAW56SE6327BTSA1
BAW56SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56T E6327
BAW 56T E6327
DIODE ARRAY GP 80V 200MA SC75
BAW56WE6327HTSA1
BAW56WE6327HTSA1
DIODE ARRAY GP 80V 200MA SOT323
BAW 56 B5003
BAW 56 B5003
DIODE ARRAY GP 80V 200MA SOT23
BAW56SH6727XTSA1
BAW56SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56W H6327
BAW 56W H6327
DIODE ARRAY GP 80V 200MA SOT323

Similar Products

Part Number BAW56SH6327XTSA1 BAW56SH6727XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Last Time Buy
Diode Configuration 2 Pair Common Anode 2 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 150 nA @ 70 V 150 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO PG-SOT363-PO

Related Product By Categories

BAV199,215
BAV199,215
Nexperia USA Inc.
DIODE ARRAY GP 75V 160MA SOT23
BAT54A/DG/B4215
BAT54A/DG/B4215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV99W
BAV99W
Diotec Semiconductor
DIODE SOT-323 85V 0.2A 4NS
BAS40-04-7-F
BAS40-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAR43CFILM
BAR43CFILM
STMicroelectronics
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAS40-06-E3-08
BAS40-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
BAV99-QR
BAV99-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAV99HYFHT116
BAV99HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
BAV99HMT116
BAV99HMT116
Rohm Semiconductor
PMDU RECTIFYING DIODE

Related Product By Brand

BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BC 856B E6327
BC 856B E6327
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRLML6346TRPBF
IRLML6346TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.4A SOT23
IRFP260NPBF
IRFP260NPBF
Infineon Technologies
MOSFET N-CH 200V 50A TO247AC
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO