BAW56SH6327XTSA1
  • Share:

Infineon Technologies BAW56SH6327XTSA1

Manufacturer No:
BAW56SH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56SH6327XTSA1 is a high-performance switching diode produced by Infineon Technologies. This component is designed for high-speed switching applications and features a common anode configuration. It is part of the BAW56 series, known for its reliability and compliance with automotive standards such as AEC-Q101. The diode is packaged in a SOT-363 package, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

Parameter Value Unit
Manufacturer Infineon Technologies
Package SOT-363
Diode Configuration 2 Pair Common Anode
Reverse Voltage (Vr) 80 V V
Peak Reverse Voltage (VRM) 85 V V
Forward Current (IF) 200 mA mA
Non-repetitive Peak Surge Forward Current (IFSM) 4.5 A (t = 1 µs) A
Forward Voltage (Vf@If) 1.25 V @ 150 mA V
Reverse Recovery Time (trr) 4 ns ns
Junction Temperature (Tj) -65 to 150 °C °C
Storage Temperature (Tstg) -65 to 150 °C °C
Total Power Dissipation (Ptot) 250 mW mW
RoHS Compliance Yes

Key Features

  • High-speed switching capabilities, making it suitable for applications requiring fast switching times.
  • Common anode configuration with two pairs of diodes.
  • Pb-free (RoHS compliant) package, ensuring environmental sustainability.
  • Qualified according to AEC-Q101 standards, making it reliable for automotive applications.
  • Low forward voltage drop of 1.25 V at 150 mA.
  • Fast reverse recovery time of 4 ns.
  • High junction temperature range of -65 to 150 °C.

Applications

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications requiring high reliability.
  • High-speed switching circuits: Ideal for applications that require fast switching times and low forward voltage drop.
  • Surface mount technology (SMT): The SOT-363 package makes it easy to integrate into SMT assembly lines.
  • General purpose switching: Can be used in a variety of general-purpose switching applications where high speed and reliability are crucial.

Q & A

  1. What is the package type of the BAW56SH6327XTSA1?

    The BAW56SH6327XTSA1 is packaged in a SOT-363 package.

  2. What is the reverse voltage rating of the BAW56SH6327XTSA1?

    The reverse voltage rating is 80 V, with a peak reverse voltage of 85 V.

  3. What is the forward current rating of the BAW56SH6327XTSA1?

    The forward current rating is 200 mA.

  4. What is the forward voltage drop at 150 mA for the BAW56SH6327XTSA1?

    The forward voltage drop at 150 mA is 1.25 V.

  5. What is the reverse recovery time of the BAW56SH6327XTSA1?

    The reverse recovery time is 4 ns.

  6. Is the BAW56SH6327XTSA1 RoHS compliant?

    Yes, the BAW56SH6327XTSA1 is RoHS compliant.

  7. What are the typical applications for the BAW56SH6327XTSA1?

    Typical applications include automotive systems, high-speed switching circuits, and general-purpose switching.

  8. What is the junction temperature range for the BAW56SH6327XTSA1?

    The junction temperature range is -65 to 150 °C.

  9. What is the total power dissipation rating for the BAW56SH6327XTSA1?

    The total power dissipation rating is 250 mW.

  10. Is the BAW56SH6327XTSA1 qualified according to any automotive standards?

    Yes, it is qualified according to AEC-Q101 standards.

Product Attributes

Diode Configuration:2 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO
0 Remaining View Similar

In Stock

$0.05
8,229

Please send RFQ , we will respond immediately.

Same Series
BAW56SH6327XTSA1
BAW56SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW56UE6327HTSA1
BAW56UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56UE6433HTMA1
BAW56UE6433HTMA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56E6327
BAW56E6327
DIODE ARRAY GP 80V 200MA SOT23
BAW 56 E6433
BAW 56 E6433
DIODE ARRAY GP 80V 200MA SOT23
BAW56SE6327BTSA1
BAW56SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56T E6327
BAW 56T E6327
DIODE ARRAY GP 80V 200MA SC75
BAW56WE6327HTSA1
BAW56WE6327HTSA1
DIODE ARRAY GP 80V 200MA SOT323
BAW 56 B5003
BAW 56 B5003
DIODE ARRAY GP 80V 200MA SOT23
BAW56SH6727XTSA1
BAW56SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56W H6327
BAW 56W H6327
DIODE ARRAY GP 80V 200MA SOT323

Similar Products

Part Number BAW56SH6327XTSA1 BAW56SH6727XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Last Time Buy
Diode Configuration 2 Pair Common Anode 2 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 150 nA @ 70 V 150 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO PG-SOT363-PO

Related Product By Categories

BAV99_R1_00001
BAV99_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BAV99WT1G
BAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SC70-3
SBAV99WT1G
SBAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SOT323
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
STPS40170CT
STPS40170CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO220
BYQ28EF-200-E3/45
BYQ28EF-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A ITO220AB
MMBD1204_D87Z
MMBD1204_D87Z
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAS16VY/ZLX
BAS16VY/ZLX
Nexperia USA Inc.
DIODE ARRAY GEN PURP 100V SOT363
BYV32EB-200PJ
BYV32EB-200PJ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BAS28 TR PBFREE
BAS28 TR PBFREE
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143

Related Product By Brand

BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BFR93AWH6327XTSA1
BFR93AWH6327XTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
IPB042N10N3GE8187ATMA1
IPB042N10N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A D2PAK
BSS123 E6433
BSS123 E6433
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
TLE72593GEXUMA3
TLE72593GEXUMA3
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
AUIR3313STRL
AUIR3313STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8