BAS40-05-E3-18
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Vishay General Semiconductor - Diodes Division BAS40-05-E3-18

Manufacturer No:
BAS40-05-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 40V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-05-E3-18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the BAS40 series, which is known for its low turn-on voltage and fast switching capabilities. The BAS40-05-E3-18 specifically features a common cathode configuration, making it suitable for a variety of applications requiring high-speed switching and low forward voltage drop.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM = VRWM = VR V 40 V
Forward Continuous Current - IF 200 mA
Surge Forward Current (tp < 1 s) - IFSM 600 mA
Power Dissipation - Ptot 200 mW
Thermal Resistance Junction to Ambient Air - RthJA 500 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +125 °C
Reverse Breakdown Voltage IR = 10 μA (pulsed) V(BR) 40 V
Leakage Current VR = 30 V IR 20 - 100 nA
Forward Voltage IF = 1 mA VF 380 mV mV
Forward Voltage IF = 50 mA VF 1 V V
Diode Capacitance VR = 0 V, f = 1 MHz CD 2.5 - 5 pF
Reverse Recovery Time IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5 ns ns

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • Protected by a PN junction.
  • AEC-Q101 qualified and RoHS-compliant.
  • Common cathode configuration for the BAS40-05 model.
  • Surface mount package in TO-236-3, SC-59, SOT-23-3.
  • Low forward voltage drop and high switching speed.
  • High surge current capability.

Applications

  • High-frequency switching applications.
  • Rectifier circuits in power supplies.
  • Clamping and protection circuits.
  • Automotive and industrial control systems.
  • Telecommunication equipment.
  • Consumer electronics requiring fast switching and low voltage drop.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS40-05-E3-18?

    The repetitive peak reverse voltage is 40 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current rating is 200 mA.

  3. What is the typical forward voltage drop at 1 mA?

    The typical forward voltage drop at 1 mA is 380 mV.

  4. What is the reverse recovery time of the BAS40-05-E3-18?

    The reverse recovery time is 5 ns.

  5. Is the BAS40-05-E3-18 RoHS-compliant and AEC-Q101 qualified?
  6. What is the junction temperature range for this diode?

    The junction temperature range is -55 to +125 °C.

  7. What is the storage temperature range for the BAS40-05-E3-18?

    The storage temperature range is -65 to +150 °C.

  8. What package types are available for the BAS40-05-E3-18?

    The diode is available in TO-236-3, SC-59, and SOT-23-3 surface mount packages.

  9. What are some common applications for the BAS40-05-E3-18?
  10. What is the thermal resistance junction to ambient air for this diode?

    The thermal resistance junction to ambient air is 500 K/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io) (per Diode):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Operating Temperature - Junction:125°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BAS40-05-E3-18 BAS40-05-HE3-18 BAS40-06-E3-18 BAS40-05-G3-18 BAS40-04-E3-18 BAS40-05-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Anode 1 Pair Common Cathode 1 Pair Series Connection 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Average Rectified (Io) (per Diode) 200mA 200mA 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3

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