BAS21-HE3-18
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Vishay General Semiconductor - Diodes Division BAS21-HE3-18

Manufacturer No:
BAS21-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The BAS21-HE3-18 is a small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its high voltage and switching capabilities. It is part of the BAS21 series, which is renowned for its reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
Maximum Forward Voltage1.25 V (at 150 mA)
Maximum Reverse Voltage200 V
Maximum Forward Current150 mA
Maximum Power Dissipation250 mW
Operating Temperature Range-55°C to +150°C
Package TypeSOD-123

Key Features

  • High voltage capability up to 200 V
  • Low forward voltage drop of 1.25 V at 150 mA
  • High switching speed, making it suitable for signal rectification and voltage clamping
  • Compact SOD-123 package
  • Wide operating temperature range from -55°C to +150°C

Applications

The BAS21-HE3-18 is used in a variety of general-purpose applications, including signal rectification, voltage clamping, and circuit protection. Typical applications include switching circuits, voltage regulators, and protection circuits in electronic devices such as computers, televisions, and automotive systems

Q & A

  1. What is the maximum reverse voltage of the BAS21-HE3-18 diode?
    The maximum reverse voltage is 200 V.
  2. What is the maximum forward current of the BAS21-HE3-18 diode?
    The maximum forward current is 150 mA.
  3. What is the operating temperature range of the BAS21-HE3-18 diode?
    The operating temperature range is from -55°C to +150°C.
  4. What package type does the BAS21-HE3-18 diode come in?
    The BAS21-HE3-18 diode comes in the SOD-123 package.
  5. What are some typical applications of the BAS21-HE3-18 diode?
    Typical applications include signal rectification, voltage clamping, and circuit protection in various electronic devices.
  6. What is the maximum power dissipation of the BAS21-HE3-18 diode?
    The maximum power dissipation is 250 mW.
  7. What is the forward voltage drop of the BAS21-HE3-18 diode at 150 mA?
    The forward voltage drop is 1.25 V at 150 mA.
  8. Why is the BAS21-HE3-18 diode suitable for switching applications?
    The diode is suitable for switching applications due to its high switching speed and low forward voltage drop.
  9. Can the BAS21-HE3-18 diode be used in high-temperature environments?
    Yes, the diode can operate in temperatures up to 150°C.
  10. Is the BAS21-HE3-18 diode available in reel packaging?
    Yes, the diode is available in tape and reel packaging.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS21-HE3-08
BAS21-HE3-08
DIODE GEN PURP 200V 200MA SOT23
BAS20-E3-18
BAS20-E3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-E3-08
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DIODE GEN PURP 100V 200MA SOT23
BAS21-HE3-18
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DIODE GEN PURP 200V 200MA SOT23
BAS21-E3-08
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DIODE GEN PURP 200V 200MA SOT23
BAS19-E3-18
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DIODE GEN PURP 100V 200MA SOT23
BAS20-E3-08
BAS20-E3-08
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-18
BAS19-HE3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-18
BAS20-HE3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-08
BAS19-HE3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-08
BAS20-HE3-08
DIODE GEN PURP 150V 200MA SOT23

Similar Products

Part Number BAS21-HE3-18 BAS20-HE3-18 BAS21-E3-18 BAS21-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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