BAS21-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-G3-08

Manufacturer No:
BAS21-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-G3-08 is a high-performance, general-purpose diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS21 series, known for its reliability and versatility in various electronic applications. The BAS21-G3-08 is packaged in a SOT-23-3 case, making it suitable for surface mount technology (SMT) and offering a compact solution for space-constrained designs.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Voltage - Forward (Vf) (Max) @ If 1.25 @ 200 mA V
Current - Average Rectified (Io) 200 mA
Current - Reverse Leakage @ Vr 100 nA @ 200 V nA
Reverse Recovery Time (trr) 50 ns
Capacitance @ Vr, F 5 pF @ 0 V, 1 MHz pF
Operating Temperature - Junction -55°C to 150°C °C
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant

Key Features

  • High Reverse Voltage: The BAS21-G3-08 has a maximum DC reverse voltage of 200 V, making it suitable for applications requiring high voltage handling.
  • Low Forward Voltage Drop: With a maximum forward voltage drop of 1.25 V at 200 mA, this diode minimizes power losses in the circuit.
  • Fast Switching: The diode features a reverse recovery time of 50 ns, which is ideal for high-frequency applications.
  • Compact Package: The SOT-23-3 package is compact and suitable for surface mount technology, making it ideal for space-constrained designs.
  • Environmental Compliance: The diode is ROHS3 compliant and has an MSL rating of 1, indicating unlimited shelf life.

Applications

The BAS21-G3-08 is versatile and can be used in a variety of applications, including:

  • General-Purpose Rectification: Suitable for rectification in power supplies, DC-DC converters, and other general-purpose applications.
  • Switching Circuits: Its fast switching characteristics make it ideal for use in switching circuits, such as in power management and control systems.
  • Protection Circuits: Can be used in protection circuits to safeguard against voltage spikes and overvoltages.
  • Automotive and Industrial Systems: Due to its robust specifications, it is also suitable for use in automotive and industrial systems where reliability and durability are critical.

Q & A

  1. What is the maximum DC reverse voltage of the BAS21-G3-08?

    The maximum DC reverse voltage of the BAS21-G3-08 is 200 V.

  2. What is the maximum forward voltage drop at 200 mA for the BAS21-G3-08?

    The maximum forward voltage drop at 200 mA is 1.25 V.

  3. What is the reverse recovery time of the BAS21-G3-08?

    The reverse recovery time is 50 ns.

  4. What is the package type of the BAS21-G3-08?

    The package type is SOT-23-3.

  5. Is the BAS21-G3-08 ROHS compliant?

    Yes, the BAS21-G3-08 is ROHS3 compliant.

  6. What is the operating temperature range of the BAS21-G3-08?

    The operating temperature range is -55°C to 150°C.

  7. What is the moisture sensitivity level (MSL) of the BAS21-G3-08?

    The MSL is 1 (Unlimited).

  8. What is the average rectified current (Io) of the BAS21-G3-08?

    The average rectified current is 200 mA.

  9. What is the capacitance at 0 V and 1 MHz for the BAS21-G3-08?

    The capacitance is 5 pF at 0 V and 1 MHz.

  10. Is the BAS21-G3-08 suitable for surface mount technology?

    Yes, the BAS21-G3-08 is suitable for surface mount technology.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
3,203

Please send RFQ , we will respond immediately.

Same Series
BAS19-G3-18
BAS19-G3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-18
BAS20-G3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-G3-08
BAS19-G3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-08
BAS20-G3-08
DIODE GEN PURP 150V 200MA SOT23
BAS21-G3-08
BAS21-G3-08
DIODE GEN PURP 200V 200MA SOT23

Similar Products

Part Number BAS21-G3-08 BAS21-G3-18 BAS20-G3-08 BAS21-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T24CA-M3/5B
SM6T24CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T15CAHE3_A/H
SM6T15CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84C56-E3-18
BZX84C56-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 56V 300MW SOT23-3
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84C62-G3-18
BZX84C62-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3