BAS21-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-G3-08

Manufacturer No:
BAS21-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-G3-08 is a high-performance, general-purpose diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS21 series, known for its reliability and versatility in various electronic applications. The BAS21-G3-08 is packaged in a SOT-23-3 case, making it suitable for surface mount technology (SMT) and offering a compact solution for space-constrained designs.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Voltage - Forward (Vf) (Max) @ If 1.25 @ 200 mA V
Current - Average Rectified (Io) 200 mA
Current - Reverse Leakage @ Vr 100 nA @ 200 V nA
Reverse Recovery Time (trr) 50 ns
Capacitance @ Vr, F 5 pF @ 0 V, 1 MHz pF
Operating Temperature - Junction -55°C to 150°C °C
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant

Key Features

  • High Reverse Voltage: The BAS21-G3-08 has a maximum DC reverse voltage of 200 V, making it suitable for applications requiring high voltage handling.
  • Low Forward Voltage Drop: With a maximum forward voltage drop of 1.25 V at 200 mA, this diode minimizes power losses in the circuit.
  • Fast Switching: The diode features a reverse recovery time of 50 ns, which is ideal for high-frequency applications.
  • Compact Package: The SOT-23-3 package is compact and suitable for surface mount technology, making it ideal for space-constrained designs.
  • Environmental Compliance: The diode is ROHS3 compliant and has an MSL rating of 1, indicating unlimited shelf life.

Applications

The BAS21-G3-08 is versatile and can be used in a variety of applications, including:

  • General-Purpose Rectification: Suitable for rectification in power supplies, DC-DC converters, and other general-purpose applications.
  • Switching Circuits: Its fast switching characteristics make it ideal for use in switching circuits, such as in power management and control systems.
  • Protection Circuits: Can be used in protection circuits to safeguard against voltage spikes and overvoltages.
  • Automotive and Industrial Systems: Due to its robust specifications, it is also suitable for use in automotive and industrial systems where reliability and durability are critical.

Q & A

  1. What is the maximum DC reverse voltage of the BAS21-G3-08?

    The maximum DC reverse voltage of the BAS21-G3-08 is 200 V.

  2. What is the maximum forward voltage drop at 200 mA for the BAS21-G3-08?

    The maximum forward voltage drop at 200 mA is 1.25 V.

  3. What is the reverse recovery time of the BAS21-G3-08?

    The reverse recovery time is 50 ns.

  4. What is the package type of the BAS21-G3-08?

    The package type is SOT-23-3.

  5. Is the BAS21-G3-08 ROHS compliant?

    Yes, the BAS21-G3-08 is ROHS3 compliant.

  6. What is the operating temperature range of the BAS21-G3-08?

    The operating temperature range is -55°C to 150°C.

  7. What is the moisture sensitivity level (MSL) of the BAS21-G3-08?

    The MSL is 1 (Unlimited).

  8. What is the average rectified current (Io) of the BAS21-G3-08?

    The average rectified current is 200 mA.

  9. What is the capacitance at 0 V and 1 MHz for the BAS21-G3-08?

    The capacitance is 5 pF at 0 V and 1 MHz.

  10. Is the BAS21-G3-08 suitable for surface mount technology?

    Yes, the BAS21-G3-08 is suitable for surface mount technology.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
3,203

Please send RFQ , we will respond immediately.

Same Series
BAS19-G3-18
BAS19-G3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-18
BAS20-G3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-G3-08
BAS19-G3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-08
BAS20-G3-08
DIODE GEN PURP 150V 200MA SOT23
BAS21-G3-08
BAS21-G3-08
DIODE GEN PURP 200V 200MA SOT23

Similar Products

Part Number BAS21-G3-08 BAS21-G3-18 BAS20-G3-08 BAS21-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

SM15T36AHE3_A/I
SM15T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T6V8AHE3/52
SM6T6V8AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T68CAHM3/H
SM15T68CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T220CAHM3/I
SM6T220CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAS70-06-E3-08
BAS70-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX84C6V2-HE3-08
BZX84C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323