BAS21-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-G3-18

Manufacturer No:
BAS21-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-G3-18 is a high-voltage, small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose switching applications and is particularly suited for automatic insertion due to its SOT-23 package. The BAS21-G3-18 is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Continuous Reverse Voltage (VR) 200 V
Repetitive Peak Reverse Voltage (VRRM) 250 V
Non-repetitive Peak Forward Surge Current (IFSM) 2.5 A
Maximum Average Forward Rectified Current (IF(AV)) 200 mA
DC Forward Current (IF) 200 mA
Repetitive Peak Forward Current (IFRM) 625 mA
Power Dissipation (Ptot) 250 mW
Forward Voltage (VF) at IF = 200 mA 1.25 V
Leakage Current (IR) at VR = 200 V 100 nA
Dynamic Forward Resistance (rf) at IF = 10 mA 5 Ω
Diode Capacitance (CD) at VR = 0, f = 1 MHz 5 pF
Reverse Recovery Time (trr) 50 ns
Operating Temperature Range -55 to +150 °C
Storage Temperature Range -65 to +150 °C
Package SOT-23-3
Mounting Type Surface Mount

Key Features

  • Silicon epitaxial planar diode
  • Fast switching diode in SOT-23 package, suitable for automatic insertion
  • High conductance
  • AEC-Q101 qualified for automotive applications
  • Green, commercial grade (part number on request)
  • ROHS compliant

Applications

  • General-purpose switching applications
  • Automotive electronics due to AEC-Q101 qualification
  • High-voltage switching circuits
  • Surface mount designs requiring compact, high-performance diodes

Q & A

  1. What is the maximum continuous reverse voltage of the BAS21-G3-18 diode?

    The maximum continuous reverse voltage is 200 V.

  2. What is the maximum average forward rectified current for the BAS21-G3-18?

    The maximum average forward rectified current is 200 mA.

  3. What is the reverse recovery time of the BAS21-G3-18 diode?

    The reverse recovery time is 50 ns.

  4. What is the operating temperature range for the BAS21-G3-18?

    The operating temperature range is -55 to +150 °C.

  5. Is the BAS21-G3-18 diode AEC-Q101 qualified?
  6. What is the package type of the BAS21-G3-18 diode?

    The package type is SOT-23-3.

  7. What is the typical forward voltage drop at 200 mA for the BAS21-G3-18?

    The typical forward voltage drop at 200 mA is 1.25 V.

  8. What is the leakage current at 200 V for the BAS21-G3-18?

    The leakage current at 200 V is 100 nA.

  9. Is the BAS21-G3-18 diode ROHS compliant?
  10. What is the dynamic forward resistance of the BAS21-G3-18 at 10 mA?

    The dynamic forward resistance at 10 mA is 5 Ω.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
4,531

Please send RFQ , we will respond immediately.

Same Series
BAS19-G3-18
BAS19-G3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-18
BAS20-G3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-G3-08
BAS19-G3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-08
BAS20-G3-08
DIODE GEN PURP 150V 200MA SOT23
BAS21-G3-08
BAS21-G3-08
DIODE GEN PURP 200V 200MA SOT23

Similar Products

Part Number BAS21-G3-18 BAS20-G3-18 BAS21-E3-18 BAS21-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM6T24CA-E3/52
SM6T24CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T36A-M3/52
SM6T36A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T68A-M3/52
SM6T68A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T150AHE3_A/I
SM6T150AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T12AHE3/57T
SM15T12AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
BAT54C-HE3-08
BAT54C-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAV21-TR
BAV21-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA DO35
BAS40-00-E3-18
BAS40-00-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
BZX55C3V3-TAP
BZX55C3V3-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 500MW DO35
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX384B3V0-HE3-18
BZX384B3V0-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323