BAS21-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-G3-18

Manufacturer No:
BAS21-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-G3-18 is a high-voltage, small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose switching applications and is particularly suited for automatic insertion due to its SOT-23 package. The BAS21-G3-18 is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Continuous Reverse Voltage (VR) 200 V
Repetitive Peak Reverse Voltage (VRRM) 250 V
Non-repetitive Peak Forward Surge Current (IFSM) 2.5 A
Maximum Average Forward Rectified Current (IF(AV)) 200 mA
DC Forward Current (IF) 200 mA
Repetitive Peak Forward Current (IFRM) 625 mA
Power Dissipation (Ptot) 250 mW
Forward Voltage (VF) at IF = 200 mA 1.25 V
Leakage Current (IR) at VR = 200 V 100 nA
Dynamic Forward Resistance (rf) at IF = 10 mA 5 Ω
Diode Capacitance (CD) at VR = 0, f = 1 MHz 5 pF
Reverse Recovery Time (trr) 50 ns
Operating Temperature Range -55 to +150 °C
Storage Temperature Range -65 to +150 °C
Package SOT-23-3
Mounting Type Surface Mount

Key Features

  • Silicon epitaxial planar diode
  • Fast switching diode in SOT-23 package, suitable for automatic insertion
  • High conductance
  • AEC-Q101 qualified for automotive applications
  • Green, commercial grade (part number on request)
  • ROHS compliant

Applications

  • General-purpose switching applications
  • Automotive electronics due to AEC-Q101 qualification
  • High-voltage switching circuits
  • Surface mount designs requiring compact, high-performance diodes

Q & A

  1. What is the maximum continuous reverse voltage of the BAS21-G3-18 diode?

    The maximum continuous reverse voltage is 200 V.

  2. What is the maximum average forward rectified current for the BAS21-G3-18?

    The maximum average forward rectified current is 200 mA.

  3. What is the reverse recovery time of the BAS21-G3-18 diode?

    The reverse recovery time is 50 ns.

  4. What is the operating temperature range for the BAS21-G3-18?

    The operating temperature range is -55 to +150 °C.

  5. Is the BAS21-G3-18 diode AEC-Q101 qualified?
  6. What is the package type of the BAS21-G3-18 diode?

    The package type is SOT-23-3.

  7. What is the typical forward voltage drop at 200 mA for the BAS21-G3-18?

    The typical forward voltage drop at 200 mA is 1.25 V.

  8. What is the leakage current at 200 V for the BAS21-G3-18?

    The leakage current at 200 V is 100 nA.

  9. Is the BAS21-G3-18 diode ROHS compliant?
  10. What is the dynamic forward resistance of the BAS21-G3-18 at 10 mA?

    The dynamic forward resistance at 10 mA is 5 Ω.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
4,531

Please send RFQ , we will respond immediately.

Same Series
BAS19-G3-18
BAS19-G3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-18
BAS20-G3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-G3-08
BAS19-G3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-08
BAS20-G3-08
DIODE GEN PURP 150V 200MA SOT23
BAS21-G3-08
BAS21-G3-08
DIODE GEN PURP 200V 200MA SOT23

Similar Products

Part Number BAS21-G3-18 BAS20-G3-18 BAS21-E3-18 BAS21-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

SM6T15A-M3/5B
SM6T15A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SMBJ5.0CAHE3_A/H
SMBJ5.0CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAT43W-G3-18
BAT43W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4002GPEHE3/73
1N4002GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX384C13-E3-18
BZX384C13-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323