BAV102-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAV102-GS08

Manufacturer No:
BAV102-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV102-GS08 is a small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAV series, known for its high performance and reliability in various electronic applications. The BAV102-GS08 is characterized by its MiniMELF (SOD80) package, making it suitable for surface mount technology (SMT) assembly. It is designed to handle a maximum repetitive peak reverse voltage (VRRM) of 200 V and a forward continuous current (IF) of 250 mA, making it an excellent choice for rectification, polarity protection, and signal switching applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 200 V
Reverse Voltage (VR) 150 V
Peak Forward Surge Current (IFSM) 1 A
Forward Continuous Current (IF) 250 mA
Power Dissipation (Ptot) 0.5 W
Forward Voltage (VF) at IF = 100 mA 1 V
Reverse Recovery Time (trr) 50 ns
Diode Capacitance (CD) at VR = 0 V, f = 1 MHz 1.5 pF
Junction Temperature (Tj) -65 to +175 °C
Package MiniMELF, SOD80

Key Features

  • High Performance: The BAV102-GS08 offers high reliability and performance in switching applications.
  • Low Forward Voltage: With a forward voltage (VF) of 1 V at 100 mA, it minimizes power loss.
  • Fast Recovery Time: A reverse recovery time (trr) of 50 ns ensures quick switching times.
  • Low Capacitance: Diode capacitance of 1.5 pF at VR = 0 V and f = 1 MHz, suitable for high-speed applications.
  • Compact Package: MiniMELF (SOD80) package for surface mount technology, enhancing board space efficiency.

Applications

  • General Purpose Switching: Suitable for various switching applications due to its fast recovery time and low forward voltage.
  • Polarity Protection: Can be used to protect circuits from reverse polarity conditions.
  • Signal Switching: Ideal for signal switching in electronic circuits.
  • Automotive and Industrial Applications: Used in automotive and industrial environments where reliability and high performance are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the BAV102-GS08?

    The maximum repetitive peak reverse voltage (VRRM) is 200 V.

  2. What is the forward continuous current (IF) rating of the BAV102-GS08?

    The forward continuous current (IF) rating is 250 mA.

  3. What is the reverse recovery time (trr) of the BAV102-GS08?

    The reverse recovery time (trr) is 50 ns.

  4. What is the package type of the BAV102-GS08?

    The package type is MiniMELF (SOD80).

  5. What is the typical forward voltage (VF) at 100 mA for the BAV102-GS08?

    The typical forward voltage (VF) at 100 mA is 1 V.

  6. What is the diode capacitance (CD) of the BAV102-GS08 at VR = 0 V and f = 1 MHz?

    The diode capacitance (CD) is 1.5 pF.

  7. What are the typical applications of the BAV102-GS08?

    Typical applications include general purpose switching, polarity protection, signal switching, and use in automotive and industrial environments.

  8. What is the junction temperature range for the BAV102-GS08?

    The junction temperature range is -65 to +175 °C.

  9. Is the BAV102-GS08 RoHS compliant?

    Yes, the BAV102-GS08 is RoHS compliant.

  10. What is the power dissipation (Ptot) of the BAV102-GS08?

    The power dissipation (Ptot) is 0.5 W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.22
3,678

Please send RFQ , we will respond immediately.

Same Series
BAV103-GS18
BAV103-GS18
DIODE GEN PURP 200V 250MA SOD80
BAV100-GS08
BAV100-GS08
DIODE GEN PURP 50V 250MA SOD80
BAV103-GS08
BAV103-GS08
DIODE GEN PURP 200V 250MA SOD80
BAV102-GS08
BAV102-GS08
DIODE GEN PURP 200V 250MA SOD80
BAV101-GS08
BAV101-GS08
DIODE GEN PURP 100V 250MA SOD80
BAV101-GS18
BAV101-GS18
DIODE GEN PURP 100V 250MA SOD80
BAV100-GS18
BAV100-GS18
DIODE GEN PURP 50V 250MA SOD80

Similar Products

Part Number BAV102-GS08 BAV202-GS08 BAV103-GS08 BAV102-GS18 BAV100-GS08 BAV101-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 200 V 150 V 50 V 100 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 50 V 100 nA @ 100 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 SOD-80 Variant DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 QuadroMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF
Operating Temperature - Junction 175°C (Max) 150°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

SM6T220CA-E3/5B
SM6T220CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAT54A-HE3-18
BAT54A-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAS85-GS08
BAS85-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MBRD340TRR
MBRD340TRR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DPAK
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
ZM4742A-GS18
ZM4742A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 1W DO213AB
BZX384C5V6-E3-08
BZX384C5V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 200MW SOD323
BZX84B12-E3-08
BZX84B12-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX384C13-E3-18
BZX384C13-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3