MUR160A R1G
  • Share:

Taiwan Semiconductor Corporation MUR160A R1G

Manufacturer No:
MUR160A R1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160A R1G is a high-efficiency, fast recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-performance applications requiring fast switching times and low forward voltage drop. It is particularly suited for use in power supply circuits, switching regulators, and other high-frequency applications.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm) 600 V
Average Rectified Output Current (Io) 1.0 A
Forward Voltage (Vf) @ If = 1A 1.25 V
Reverse Recovery Time (trr) 50-75 ns ns
Forward Surge Current (Ifsm) 35 A A
Operating Temperature Range -65°C to +175°C °C
Package / Case DO-204AL, DO-41, Axial -
Mounting Type Through Hole -
Junction to Case Thermal Resistance 50°C/W °C/W

Key Features

  • Fast recovery time of 50-75 ns, making it suitable for high-frequency applications.
  • Low forward voltage drop of 1.25 V at 1 A, reducing power losses.
  • High surge current capability of 35 A for handling transient conditions.
  • Wide operating temperature range from -65°C to +175°C.
  • Axial lead package (DO-204AL, DO-41) for through-hole mounting.
  • UL flammability classification rating 94V-0 and RoHS compliant.

Applications

  • Power supply circuits, including switching regulators and DC-DC converters.
  • High-frequency rectification in audio and video equipment.
  • Motor control and drive systems.
  • Automotive and industrial power systems.
  • General-purpose rectification in various electronic devices.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR160A R1G diode?

    The maximum repetitive reverse voltage is 600 V.

  2. What is the average rectified output current of the MUR160A R1G diode?

    The average rectified output current is 1.0 A.

  3. What is the forward voltage drop of the MUR160A R1G diode at 1 A?

    The forward voltage drop is 1.25 V at 1 A.

  4. What is the reverse recovery time of the MUR160A R1G diode?

    The reverse recovery time is between 50-75 ns.

  5. What is the maximum forward surge current of the MUR160A R1G diode?

    The maximum forward surge current is 35 A.

  6. What is the operating temperature range of the MUR160A R1G diode?

    The operating temperature range is from -65°C to +175°C.

  7. What type of package does the MUR160A R1G diode come in?

    The diode comes in a DO-204AL, DO-41, axial lead package.

  8. Is the MUR160A R1G diode RoHS compliant?
  9. What are some common applications of the MUR160A R1G diode?
  10. What is the junction to case thermal resistance of the MUR160A R1G diode?

    The junction to case thermal resistance is 50°C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
343

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MUR160A R1G MUR160AHR1G MUR190A R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 900 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

1.5KE6.8A A0G
1.5KE6.8A A0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAV21W-G RHG
BAV21W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 200MA SOD123
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR840 C0G
MUR840 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX585B5V1 RSG
BZX585B5V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 200MW SOD523F
BZV55B2V4 L1G
BZV55B2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZX585B3V0 RKG
BZX585B3V0 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35