MUR160A R1G
  • Share:

Taiwan Semiconductor Corporation MUR160A R1G

Manufacturer No:
MUR160A R1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160A R1G is a high-efficiency, fast recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-performance applications requiring fast switching times and low forward voltage drop. It is particularly suited for use in power supply circuits, switching regulators, and other high-frequency applications.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm) 600 V
Average Rectified Output Current (Io) 1.0 A
Forward Voltage (Vf) @ If = 1A 1.25 V
Reverse Recovery Time (trr) 50-75 ns ns
Forward Surge Current (Ifsm) 35 A A
Operating Temperature Range -65°C to +175°C °C
Package / Case DO-204AL, DO-41, Axial -
Mounting Type Through Hole -
Junction to Case Thermal Resistance 50°C/W °C/W

Key Features

  • Fast recovery time of 50-75 ns, making it suitable for high-frequency applications.
  • Low forward voltage drop of 1.25 V at 1 A, reducing power losses.
  • High surge current capability of 35 A for handling transient conditions.
  • Wide operating temperature range from -65°C to +175°C.
  • Axial lead package (DO-204AL, DO-41) for through-hole mounting.
  • UL flammability classification rating 94V-0 and RoHS compliant.

Applications

  • Power supply circuits, including switching regulators and DC-DC converters.
  • High-frequency rectification in audio and video equipment.
  • Motor control and drive systems.
  • Automotive and industrial power systems.
  • General-purpose rectification in various electronic devices.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR160A R1G diode?

    The maximum repetitive reverse voltage is 600 V.

  2. What is the average rectified output current of the MUR160A R1G diode?

    The average rectified output current is 1.0 A.

  3. What is the forward voltage drop of the MUR160A R1G diode at 1 A?

    The forward voltage drop is 1.25 V at 1 A.

  4. What is the reverse recovery time of the MUR160A R1G diode?

    The reverse recovery time is between 50-75 ns.

  5. What is the maximum forward surge current of the MUR160A R1G diode?

    The maximum forward surge current is 35 A.

  6. What is the operating temperature range of the MUR160A R1G diode?

    The operating temperature range is from -65°C to +175°C.

  7. What type of package does the MUR160A R1G diode come in?

    The diode comes in a DO-204AL, DO-41, axial lead package.

  8. Is the MUR160A R1G diode RoHS compliant?
  9. What are some common applications of the MUR160A R1G diode?
  10. What is the junction to case thermal resistance of the MUR160A R1G diode?

    The junction to case thermal resistance is 50°C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
343

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MUR160A R1G MUR160AHR1G MUR190A R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 900 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR420S
MUR420S
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR460SH
MUR460SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAS16 RFG
BAS16 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOT23
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55C11 L0G
BZV55C11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BC817-40 RFG
BC817-40 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
TS321CX5 RFG
TS321CX5 RFG
Taiwan Semiconductor Corporation
IC OPAMP GP 1 CIRCUIT SOT25