MBR120VLSFT1G
  • Share:

onsemi MBR120VLSFT1G

Manufacturer No:
MBR120VLSFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 1A SOD123FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR120VLSFT1G is a Schottky power rectifier diode produced by onsemi. This device is designed for low voltage, high frequency rectification and is ideal for applications where compact size and weight are critical. It uses the Schottky Barrier principle, offering very low forward voltage and high efficiency. The diode is packaged in a SOD-123FL case, making it suitable for surface mount applications. It is particularly useful in portable and battery-powered products such as cellular phones, chargers, notebook computers, and other compact electronic devices.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current (Rated VR) IF(AV) 1.0 A
Non-Repetitive Peak Surge Current IFSM 45 A
Storage Temperature Range Tstg −65 to +125 °C
Operating Junction Temperature TJ −65 to +125 °C
Maximum Instantaneous Forward Voltage (IF = 1.0 A) VF 0.340 V
Maximum Instantaneous Reverse Current (Rated DC Voltage) IR 0.60 mA
Thermal Resistance - Junction-to-Ambient Rtja 82 °C/W
Package Type SOD-123FL
Number of Pins 2

Key Features

  • Guardring for Stress Protection: Enhances the device's reliability by protecting against electrical stress.
  • Optimized for Very Low Forward Voltage: Offers high efficiency with minimal voltage drop.
  • High Operating Junction Temperature: Can operate up to 125°C, making it suitable for a wide range of applications.
  • ESD Ratings: Compliant with Machine Model and Human Body Model standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Package Designed for Optimal Automated Board Assembly: Easy to integrate into automated manufacturing processes.

Applications

The MBR120VLSFT1G is ideal for various applications where low voltage and high frequency rectification are required. Some key applications include:

  • AC-DC and DC-DC Converters: Efficient rectification in power conversion circuits.
  • Reverse Battery Protection: Protects against reverse polarity conditions.
  • Oring of Multiple Supply Voltages: Ensures reliable operation with multiple power sources.
  • Portable and Battery-Powered Devices: Suitable for cellular phones, chargers, notebook computers, and other compact electronic devices.

Q & A

  1. What is the peak repetitive reverse voltage of the MBR120VLSFT1G?

    The peak repetitive reverse voltage is 20 V.

  2. What is the average rectified forward current rating of the MBR120VLSFT1G?

    The average rectified forward current rating is 1.0 A.

  3. What is the maximum instantaneous forward voltage of the MBR120VLSFT1G at 1.0 A?

    The maximum instantaneous forward voltage at 1.0 A is 0.340 V.

  4. Is the MBR120VLSFT1G RoHS compliant?
  5. What is the operating junction temperature range of the MBR120VLSFT1G?

    The operating junction temperature range is −65 to +125°C.

  6. What package type is used for the MBR120VLSFT1G?

    The package type is SOD-123FL.

  7. Is the MBR120VLSFT1G suitable for automotive applications?
  8. What is the thermal resistance - junction-to-ambient of the MBR120VLSFT1G?

    The thermal resistance - junction-to-ambient is 82°C/W.

  9. What are some typical applications of the MBR120VLSFT1G?
  10. Does the MBR120VLSFT1G have ESD protection?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:340 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:600 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

$0.43
35

Please send RFQ , we will respond immediately.

Same Series
NRVB120VLSFT1G
NRVB120VLSFT1G
DIODE SCHOTTKY 20V 1A SOD123
MBR120VLSFT3G
MBR120VLSFT3G
DIODE SCHOTTKY 20V 1A SOD123FL
MBR120VLSFT1
MBR120VLSFT1
DIODE SCHOTTKY 20V 1A SOD123L

Similar Products

Part Number MBR120VLSFT1G MBR120VLSFT3G MBR120VLSFT1H MBR120LSFT1G MBR120VLSFT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 340 mV @ 1 A 340 mV @ 1 A 340 mV @ 1 A 450 mV @ 1 A 340 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 600 µA @ 20 V 600 µA @ 20 V 600 µA @ 20 V 400 µA @ 20 V 600 µA @ 20 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5