BC857BWH6327
  • Share:

Infineon Technologies BC857BWH6327

Manufacturer No:
BC857BWH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BWH6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for various amplifier applications and is known for its high current gain and low noise characteristics. It is housed in a SMALL OUTLINE, R-PDSO-G3 package, making it suitable for surface mount technology (SMT) and low power applications.

Key Specifications

Parameter Value Unit
Manufacturer Part Number BC857BWH6327
Pb-free Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max (VCEO) 45 V
DC Current Gain-Min (hFE) 220
Transition Frequency-Nom (fT) 250 MHz
Polarity/Channel Type PNP
Terminal Finish Matte Tin (Sn)
Transistor Application AMPLIFIER

Key Features

  • High Current Gain: The BC857BWH6327 has a minimum DC current gain (hFE) of 220, making it suitable for amplifier applications.
  • Low Noise: It exhibits low noise characteristics, particularly between 30 Hz and 15 kHz, which is beneficial for audio and other low-frequency applications.
  • Pb-free and RoHS Compliant: The transistor is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
  • AEC-Q101 Qualified: It meets the AEC-Q101 standard, which is crucial for automotive and other applications requiring high reliability.
  • Surface Mount Technology (SMT): The SMALL OUTLINE, R-PDSO-G3 package is designed for SMT, facilitating easy integration into modern electronic designs.

Applications

  • Amplifier Applications: The BC857BWH6327 is primarily used in general-purpose amplifier circuits due to its high current gain and low noise characteristics.
  • Audio Input Stages: It is suitable for audio frequency (AF) input stages and driver applications where low noise and high fidelity are required.
  • Automotive Electronics: Given its AEC-Q101 qualification, it can be used in various automotive electronic systems that demand high reliability.

Q & A

  1. What is the part number of this transistor?

    The part number is BC857BWH6327.

  2. Who is the manufacturer of the BC857BWH6327?

    The manufacturer is Infineon Technologies AG.

  3. What is the package type of the BC857BWH6327?

    The package type is SMALL OUTLINE, R-PDSO-G3.

  4. What is the maximum collector-emitter voltage (VCEO) of the BC857BWH6327?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  5. What is the minimum DC current gain (hFE) of the BC857BWH6327?

    The minimum DC current gain (hFE) is 220.

  6. Is the BC857BWH6327 Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  7. What is the transition frequency (fT) of the BC857BWH6327?

    The transition frequency (fT) is 250 MHz.

  8. What are the primary applications of the BC857BWH6327?

    The primary applications include general-purpose amplifier circuits, audio input stages, and automotive electronics.

  9. Is the BC857BWH6327 qualified according to AEC-Q101 standards?

    Yes, it is qualified according to AEC-Q101 standards.

  10. What is the current life cycle status of the BC857BWH6327?

    The current life cycle status is End Of Life.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3-1
0 Remaining View Similar

In Stock

$0.04
1,029

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC857BWH6327 BC857CWH6327 BC857BWE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323-3-1 PG-SOT323-3-1 PG-SOT323

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

BAT5405E6327HTSA1
BAT5405E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS4002LE6327XTMA1
BAS4002LE6327XTMA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA TSLP-2
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC817K25E6327HTSA1
BC817K25E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC807-25WE6327
BC807-25WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC860BWE6327HTSA1
BC860BWE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT-323
BC 817-25 B5003
BC 817-25 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRFP250NPBF
IRFP250NPBF
Infineon Technologies
MOSFET N-CH 200V 30A TO247AC
IRS2092STRPBF
IRS2092STRPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
IR2104STRPBF
IR2104STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC