STDV3055L104T4G
  • Share:

onsemi STDV3055L104T4G

Manufacturer No:
STDV3055L104T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STDV3055L104T4G is a power MOSFET from onsemi, designed for low voltage, high-speed switching applications. This N-channel, logic-level MOSFET is part of the NTD3055L104 series and is specifically tailored for use in power supplies, converters, power motor controls, and bridge circuits. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage, Continuous VGS ±15 Vdc
Continuous Drain Current at TA = 25°C ID 12 A
Continuous Drain Current at TA = 100°C ID 10 A
Single Pulse Drain Current IDM 45 A
Total Power Dissipation at TA = 25°C PD 48 W
Operating and Storage Temperature Range TJ, Tstg -55 to +175 °C
Gate Threshold Voltage VGS(th) 1.0 - 2.0 Vdc
Static Drain-to-Source On-Resistance RDS(on) 89 - 104

Key Features

  • Lower RDS(on) for reduced power losses.
  • Lower VDS(on) for improved switching performance.
  • Tighter VSD specification for better diode characteristics.
  • Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for faster switching.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
  • Pb-free and RoHS compliant.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the STDV3055L104T4G?

    The maximum drain-to-source voltage is 60 Vdc.

  2. What is the continuous drain current at TA = 25°C?

    The continuous drain current at TA = 25°C is 12 A.

  3. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.0 Vdc.

  4. What are the key features of this MOSFET?

    The key features include lower RDS(on), lower VDS(on), tighter VSD specification, lower diode reverse recovery time, and lower reverse recovery stored charge.

  5. Is the STDV3055L104T4G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  6. What is the operating and storage temperature range?

    The operating and storage temperature range is -55 to +175 °C.

  7. What are the typical applications of this MOSFET?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  8. Is the STDV3055L104T4G Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  9. What is the total power dissipation at TA = 25°C?

    The total power dissipation at TA = 25°C is 48 W.

  10. What is the single pulse drain current rating?

    The single pulse drain current rating is 45 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 48W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
605

Please send RFQ , we will respond immediately.

Same Series
NTD3055L104T4G
NTD3055L104T4G
MOSFET N-CH 60V 12A DPAK
NTD3055L104-1G
NTD3055L104-1G
MOSFET N-CH 60V 12A IPAK
NTD3055L104G
NTD3055L104G
MOSFET N-CH 60V 12A DPAK
NTDV3055L104-1G
NTDV3055L104-1G
MOSFET N-CH 60V 12A IPAK
STDV3055L104T4G
STDV3055L104T4G
MOSFET N-CH 60V 12A DPAK

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN