STDV3055L104T4G
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onsemi STDV3055L104T4G

Manufacturer No:
STDV3055L104T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STDV3055L104T4G is a power MOSFET from onsemi, designed for low voltage, high-speed switching applications. This N-channel, logic-level MOSFET is part of the NTD3055L104 series and is specifically tailored for use in power supplies, converters, power motor controls, and bridge circuits. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage, Continuous VGS ±15 Vdc
Continuous Drain Current at TA = 25°C ID 12 A
Continuous Drain Current at TA = 100°C ID 10 A
Single Pulse Drain Current IDM 45 A
Total Power Dissipation at TA = 25°C PD 48 W
Operating and Storage Temperature Range TJ, Tstg -55 to +175 °C
Gate Threshold Voltage VGS(th) 1.0 - 2.0 Vdc
Static Drain-to-Source On-Resistance RDS(on) 89 - 104

Key Features

  • Lower RDS(on) for reduced power losses.
  • Lower VDS(on) for improved switching performance.
  • Tighter VSD specification for better diode characteristics.
  • Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for faster switching.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
  • Pb-free and RoHS compliant.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the STDV3055L104T4G?

    The maximum drain-to-source voltage is 60 Vdc.

  2. What is the continuous drain current at TA = 25°C?

    The continuous drain current at TA = 25°C is 12 A.

  3. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.0 Vdc.

  4. What are the key features of this MOSFET?

    The key features include lower RDS(on), lower VDS(on), tighter VSD specification, lower diode reverse recovery time, and lower reverse recovery stored charge.

  5. Is the STDV3055L104T4G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  6. What is the operating and storage temperature range?

    The operating and storage temperature range is -55 to +175 °C.

  7. What are the typical applications of this MOSFET?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  8. Is the STDV3055L104T4G Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  9. What is the total power dissipation at TA = 25°C?

    The total power dissipation at TA = 25°C is 48 W.

  10. What is the single pulse drain current rating?

    The single pulse drain current rating is 45 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 48W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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NTD3055L104T4G
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