STW21NM60N
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STMicroelectronics STW21NM60N

Manufacturer No:
STW21NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW21NM60N is a high-performance N-channel power MOSFET produced by STMicroelectronics. It belongs to the second generation of MDmesh™ Power MOSFETs, known for their high efficiency and reliability. This device is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Continuous Drain Current)17 A
RDS(on) (On-State Resistance)0.17 Ω
PD (Power Dissipation)Dependent on package and thermal conditions
Package TypesTO-220, TO-220FP, D2PAK, I2PAK, TO-247

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.17 Ω, which minimizes power losses.
  • 100% avalanche tested for robustness and reliability.
  • Zener-protected for enhanced protection against voltage spikes.
  • Ideal for flyback converters and LED lighting applications due to its high efficiency and reliability.

Applications

  • Flyback converters: The STW21NM60N is well-suited for flyback converter designs due to its high voltage and current handling capabilities.
  • LED lighting: Its efficiency and reliability make it an excellent choice for LED lighting systems.
  • Power supplies: It can be used in various power supply applications requiring high voltage and current management.
  • Motor control: Suitable for motor control applications where high power and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the STW21NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current rating of the STW21NM60N?
    The continuous drain current (ID) is 17 A.
  3. What is the on-state resistance of the STW21NM60N?
    The on-state resistance (RDS(on)) is 0.17 Ω.
  4. What are the available package types for the STW21NM60N?
    The available package types include TO-220, TO-220FP, D2PAK, I2PAK, and TO-247.
  5. Is the STW21NM60N suitable for flyback converters?
    Yes, it is highly suitable for flyback converters due to its high voltage and current handling capabilities.
  6. What other applications can the STW21NM60N be used in?
    Besides flyback converters, it can be used in LED lighting, power supplies, and motor control applications.
  7. Is the STW21NM60N 100% avalanche tested?
    Yes, it is 100% avalanche tested for enhanced robustness and reliability.
  8. Does the STW21NM60N have Zener protection?
    Yes, it includes Zener protection to safeguard against voltage spikes.
  9. Who is the manufacturer of the STW21NM60N?
    The manufacturer is STMicroelectronics.
  10. Where can I find the datasheet for the STW21NM60N?
    You can find the datasheet on the official STMicroelectronics website or through distributors like Digi-Key, Mouser, and Heisener.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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STB21NM60N
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STB21NM60N-1
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MOSFET N-CH 600V 17A I2PAK

Similar Products

Part Number STW21NM60N STW24NM60N STW26NM60N STW21NM60ND STW25NM60N STW23NM60N STW22NM60N STW21NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc) 20A (Tc) 17A (Tc) 21A (Tc) 19A (Tc) 16A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 220mOhm @ 8.5A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 9.5A, 10V 220mOhm @ 8A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 46 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 60 nC @ 10 V 44 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±25V ±30V ±30V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V 1400 pF @ 50 V 1800 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 1330 pF @ 50 V 1950 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 140W (Tc) 125W (Tc) 140W (Tc) 140W (Tc) 160W (Tc) 150W (Tc) 125W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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