STW21NM60N
  • Share:

STMicroelectronics STW21NM60N

Manufacturer No:
STW21NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW21NM60N is a high-performance N-channel power MOSFET produced by STMicroelectronics. It belongs to the second generation of MDmesh™ Power MOSFETs, known for their high efficiency and reliability. This device is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Continuous Drain Current)17 A
RDS(on) (On-State Resistance)0.17 Ω
PD (Power Dissipation)Dependent on package and thermal conditions
Package TypesTO-220, TO-220FP, D2PAK, I2PAK, TO-247

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.17 Ω, which minimizes power losses.
  • 100% avalanche tested for robustness and reliability.
  • Zener-protected for enhanced protection against voltage spikes.
  • Ideal for flyback converters and LED lighting applications due to its high efficiency and reliability.

Applications

  • Flyback converters: The STW21NM60N is well-suited for flyback converter designs due to its high voltage and current handling capabilities.
  • LED lighting: Its efficiency and reliability make it an excellent choice for LED lighting systems.
  • Power supplies: It can be used in various power supply applications requiring high voltage and current management.
  • Motor control: Suitable for motor control applications where high power and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the STW21NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current rating of the STW21NM60N?
    The continuous drain current (ID) is 17 A.
  3. What is the on-state resistance of the STW21NM60N?
    The on-state resistance (RDS(on)) is 0.17 Ω.
  4. What are the available package types for the STW21NM60N?
    The available package types include TO-220, TO-220FP, D2PAK, I2PAK, and TO-247.
  5. Is the STW21NM60N suitable for flyback converters?
    Yes, it is highly suitable for flyback converters due to its high voltage and current handling capabilities.
  6. What other applications can the STW21NM60N be used in?
    Besides flyback converters, it can be used in LED lighting, power supplies, and motor control applications.
  7. Is the STW21NM60N 100% avalanche tested?
    Yes, it is 100% avalanche tested for enhanced robustness and reliability.
  8. Does the STW21NM60N have Zener protection?
    Yes, it includes Zener protection to safeguard against voltage spikes.
  9. Who is the manufacturer of the STW21NM60N?
    The manufacturer is STMicroelectronics.
  10. Where can I find the datasheet for the STW21NM60N?
    You can find the datasheet on the official STMicroelectronics website or through distributors like Digi-Key, Mouser, and Heisener.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
335

Please send RFQ , we will respond immediately.

Same Series
STP21NM60N
STP21NM60N
MOSFET N-CH 600V 17A TO220AB
STW21NM60N
STW21NM60N
MOSFET N-CH 600V 17A TO247-3
STB21NM60N
STB21NM60N
MOSFET N-CH 600V 17A D2PAK
STB21NM60N-1
STB21NM60N-1
MOSFET N-CH 600V 17A I2PAK

Similar Products

Part Number STW21NM60N STW24NM60N STW26NM60N STW21NM60ND STW25NM60N STW23NM60N STW22NM60N STW21NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc) 20A (Tc) 17A (Tc) 21A (Tc) 19A (Tc) 16A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 220mOhm @ 8.5A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 9.5A, 10V 220mOhm @ 8A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 46 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 60 nC @ 10 V 44 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±25V ±30V ±30V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V 1400 pF @ 50 V 1800 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 1330 pF @ 50 V 1950 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 140W (Tc) 125W (Tc) 140W (Tc) 140W (Tc) 160W (Tc) 150W (Tc) 125W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT