STW21NM60ND
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STMicroelectronics STW21NM60ND

Manufacturer No:
STW21NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW21NM60ND is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics. It belongs to the FDmesh™ II series, which is the second generation of MDmesh™ technology. This MOSFET is known for its advanced characteristics, making it suitable for a wide range of high-power applications. It is packaged in a TO-247-3 case, which is designed to handle high current and power dissipation efficiently.

Key Specifications

ParameterValue
Maximum Voltage (Vds)600 V
Maximum Current (Id)17 A
On-Resistance (Rds(on))0.17 Ω (typical), 0.22 Ω (maximum)
Gate Charge (Qg)60 nC
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Power Dissipation (Pd)140 W

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.17 Ω (typical), which reduces power losses.
  • High current capability of up to 17 A.
  • Advanced FDmesh™ II technology for improved performance and reliability.
  • Included fast diode for better switching characteristics.
  • TO-247-3 package for efficient heat dissipation and high current handling.

Applications

The STW21NM60ND is designed for use in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and inverters.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum voltage rating of the STW21NM60ND?
    The maximum voltage rating is 600 V.
  2. What is the typical on-resistance (Rds(on)) of the STW21NM60ND?
    The typical on-resistance is 0.17 Ω.
  3. What is the maximum current rating of the STW21NM60ND?
    The maximum current rating is 17 A.
  4. What is the operating temperature range of the STW21NM60ND?
    The operating temperature range is from -55 °C to +150 °C.
  5. What package type is the STW21NM60ND available in?
    The STW21NM60ND is available in a TO-247-3 package.
  6. What technology does the STW21NM60ND use?
    The STW21NM60ND uses the advanced FDmesh™ II technology.
  7. Does the STW21NM60ND include a fast diode?
    Yes, the STW21NM60ND includes a fast diode.
  8. What are some common applications for the STW21NM60ND?
    Common applications include power supplies, motor control systems, industrial power systems, automotive systems, and renewable energy systems.
  9. What is the maximum power dissipation of the STW21NM60ND?
    The maximum power dissipation is 140 W.
  10. Where can I find detailed specifications for the STW21NM60ND?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW21NM60ND STW28NM60ND STW23NM60ND STW25NM60ND STW27NM60ND STW26NM60ND STW21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 23A (Tc) 19.5A (Tc) 21A (Tc) 21A (Tc) 21A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 150mOhm @ 11.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 62.5 nC @ 10 V 70 nC @ 10 V 80 nC @ 10 V - 54.6 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 2090 pF @ 100 V 2050 pF @ 50 V 2400 pF @ 50 V - 1817 pF @ 100 V 1900 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 140W (Tc) 190W (Tc) 150W (Tc) 160W (Tc) 160W (Tc) 190W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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