Overview
The STF24NM60N is a revolutionary N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ II technology. This device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.
The STF24NM60N is housed in various packages, including TO-220FP, I²PAK, TO-220, and TO-247, offering flexibility in design and application. It is 100% avalanche tested and features low input capacitance, low gate charge, and low gate input resistance, making it ideal for high-performance switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Breakdown Voltage (VBRDSS) | 600 | V |
Static Drain-Source On-Resistance (RDS(on)) | 0.168 (typ.), 0.19 (max.) | Ω |
Continuous Drain Current (ID) at TC = 25 °C | 17 | A |
Pulsed Drain Current (IDM) | 68 | A |
Gate-Source Voltage (VGS) | ± 30 | V |
Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
Operating Junction Temperature (TJ) | -55 to 150 | °C |
Thermal Resistance Junction-Case (Rthj-case) | 4.17 (TO-220FP) | °C/W |
Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 (TO-220FP) | °C/W |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Fast switching times
- Low on-resistance (RDS(on)) of 0.168 Ω (typ.)
- High efficiency due to reduced turn-on/turn-off switching losses
- Available in TO-220FP, I²PAK, TO-220, and TO-247 packages
Applications
- Switching applications
- High-efficiency converters
- IGBT and power supply control circuits
- DC-DC converters
- Load switches
- Motor drives
- Solar microinverters and data center power supplies
Q & A
- What is the STF24NM60N?
The STF24NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ II technology.
- What are the key features of the STF24NM60N?
It features low on-resistance, low gate charge, low input capacitance, and low gate input resistance, making it suitable for high-efficiency converters.
- What are the typical applications of the STF24NM60N?
It is used in switching applications, high-efficiency converters, IGBT and power supply control circuits, DC-DC converters, load switches, and motor drives.
- What is the maximum drain current of the STF24NM60N?
The maximum continuous drain current is 17 A at TC = 25 °C.
- What is the maximum drain-source breakdown voltage of the STF24NM60N?
The maximum drain-source breakdown voltage is 600 V.
- What packages are available for the STF24NM60N?
It is available in TO-220FP, I²PAK, TO-220, and TO-247 packages.
- What is the thermal resistance junction-case for the TO-220FP package?
The thermal resistance junction-case for the TO-220FP package is 4.17 °C/W.
- Is the STF24NM60N 100% avalanche tested?
- What is the operating junction temperature range for the STF24NM60N?
The operating junction temperature range is -55 to 150 °C.
- What are the benefits of using the STF24NM60N in high-efficiency converters?
The low on-resistance and gate charge reduce switching losses, enhancing overall efficiency in high-efficiency converters.