STF22NM60N
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STMicroelectronics STF22NM60N

Manufacturer No:
STF22NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 16A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF22NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for high-efficiency converters and demanding switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.20 Ω (typ.), 0.22 Ω (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 16 A
ID (Drain Current, continuous at TC = 100 °C) 10 A
IDM (Drain Current, pulsed) 64 A
VGS (Gate-Source Voltage) ± 30 V
PTOT (Total Dissipation at TC = 25 °C) 125 (TO-220), 30 (TO-220FP) W
Thermal Resistance Junction-Pcb 30 °C/W °C/W

Key Features

  • Low on-resistance (RDS(on)) of 0.20 Ω (typ.) and 0.22 Ω (max.)
  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • Available in TO-220, TO-220FP, and D²PAK packages
  • RoHS compliant and Ecopack2 certified

Applications

The STF22NM60N is particularly suited for high-efficiency switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage of the STF22NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STF22NM60N?

    The typical on-resistance (RDS(on)) is 0.20 Ω.

  3. What is the maximum continuous drain current at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 16 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ± 30 V.

  5. In what packages is the STF22NM60N available?

    The STF22NM60N is available in TO-220, TO-220FP, and D²PAK packages.

  6. Is the STF22NM60N RoHS compliant?

    Yes, the STF22NM60N is RoHS compliant and Ecopack2 certified.

  7. What are the typical applications of the STF22NM60N?

    The STF22NM60N is typically used in high-efficiency switching applications such as power supplies, DC-DC converters, motor control, and industrial power systems.

  8. What is the thermal resistance junction-pcb of the STF22NM60N?

    The thermal resistance junction-pcb is 30 °C/W.

  9. What is the maximum pulsed drain current of the STF22NM60N?

    The maximum pulsed drain current (IDM) is 64 A.

  10. Is the STF22NM60N 100% avalanche tested?

    Yes, the STF22NM60N is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF22NM60N STF24NM60N STF26NM60N STF25NM60N STF23NM60N STF22NM60ND STF12NM60N STF21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 17A (Tc) 20A (Tc) 21A (Tc) 19A (Tc) 17A (Tc) 10A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8A, 10V 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 9.5A, 10V 220mOhm @ 8.5A, 10V 410mOhm @ 5A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 46 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V 30.5 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V 1400 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 1800 pF @ 50 V 960 pF @ 50 V 1900 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 35W (Tc) 40W (Tc) 35W (Tc) 30W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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