STF22NM60N
  • Share:

STMicroelectronics STF22NM60N

Manufacturer No:
STF22NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 16A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF22NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for high-efficiency converters and demanding switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.20 Ω (typ.), 0.22 Ω (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 16 A
ID (Drain Current, continuous at TC = 100 °C) 10 A
IDM (Drain Current, pulsed) 64 A
VGS (Gate-Source Voltage) ± 30 V
PTOT (Total Dissipation at TC = 25 °C) 125 (TO-220), 30 (TO-220FP) W
Thermal Resistance Junction-Pcb 30 °C/W °C/W

Key Features

  • Low on-resistance (RDS(on)) of 0.20 Ω (typ.) and 0.22 Ω (max.)
  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • Available in TO-220, TO-220FP, and D²PAK packages
  • RoHS compliant and Ecopack2 certified

Applications

The STF22NM60N is particularly suited for high-efficiency switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage of the STF22NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STF22NM60N?

    The typical on-resistance (RDS(on)) is 0.20 Ω.

  3. What is the maximum continuous drain current at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 16 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ± 30 V.

  5. In what packages is the STF22NM60N available?

    The STF22NM60N is available in TO-220, TO-220FP, and D²PAK packages.

  6. Is the STF22NM60N RoHS compliant?

    Yes, the STF22NM60N is RoHS compliant and Ecopack2 certified.

  7. What are the typical applications of the STF22NM60N?

    The STF22NM60N is typically used in high-efficiency switching applications such as power supplies, DC-DC converters, motor control, and industrial power systems.

  8. What is the thermal resistance junction-pcb of the STF22NM60N?

    The thermal resistance junction-pcb is 30 °C/W.

  9. What is the maximum pulsed drain current of the STF22NM60N?

    The maximum pulsed drain current (IDM) is 64 A.

  10. Is the STF22NM60N 100% avalanche tested?

    Yes, the STF22NM60N is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$7.12
63

Please send RFQ , we will respond immediately.

Same Series
STI22NM60N
STI22NM60N
MOSFET N-CH 600V 16A I2PAK
STF22NM60N
STF22NM60N
MOSFET N-CH 600V 16A TO220FP
STB22NM60N
STB22NM60N
MOSFET N-CH 600V 16A D2PAK
STW22NM60N
STW22NM60N
MOSFET N-CH 600V 16A TO247-3

Similar Products

Part Number STF22NM60N STF24NM60N STF26NM60N STF25NM60N STF23NM60N STF22NM60ND STF12NM60N STF21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 17A (Tc) 20A (Tc) 21A (Tc) 19A (Tc) 17A (Tc) 10A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8A, 10V 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 9.5A, 10V 220mOhm @ 8.5A, 10V 410mOhm @ 5A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 46 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V 30.5 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V 1400 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 1800 pF @ 50 V 960 pF @ 50 V 1900 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 35W (Tc) 40W (Tc) 35W (Tc) 30W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN